1N4695

1N4678 Series 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators This is a complete series of 500 mW Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon–oxide passivated junctions. All this in an axial–lead hermetically sealed glass package that offers protection in all common environmental conditions. http://onsemi.com Cathode Anode Specification Features: • Zener Voltage Range – 1.8 V to 27 V • ESD Rating of Class 3 (>16 KV) per Human Body Model • DO–204AH (DO–35) Package – Smaller than Conventional DO–204AA Package • Double Slug Type Construction • Metallurgical Bonded Construction AXIAL LEAD CASE 299 GLASS Mechanical Characteristics: CASE: Double slug type, hermetically sealed glass FINISH: All external surfaces are corrosion resistant and leads are MARKING DIAGRAM readily solderable L 1N 4x xx YWW MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any L = Assembly Location 1N4xxx = Device Code = (See Table Next Page) Y = Year WW = Work Week MAXIMUM RATINGS (Note 1.) Rating Max. Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8″ Derate above 75°C Operating and Storage Temperature Range Symbol Value Unit PD 500 mW 4.0 mW/°C –65 to +200 °C TJ, Tstg ORDERING INFORMATION Device Package Shipping 1N4xxx Axial Lead 3000 Units/Box 1N4xxxRL Axial Lead 5000/Tape & Reel 1N4xxxRL2 * Axial Lead 5000/Tape & Reel 1N4xxxTA Axial Lead 5000/Ammo Pack 1N4xxxTA2 * Axial Lead 5000/Tape & Reel 1N4xxxRR1  Axial Lead 3000/Tape & Reel 1N4xxxRR2  Axial Lead 3000/Tape & Reel 1. Some part number series have lower JEDEC registered ratings. * The “2” suffix refers to 26 mm tape spacing. Polarity band up with cathode lead off first Polarity band down with cathode lead off first   Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 1 197 Publication Order Number: 1N4678/D 1N4678 Series Low level oxide passivated zener diodes for applications requiring extremely low operating currents, low leakage, and sharp breakdown voltage. I IF ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.5 V Max @ IF = 100 mA for all types) Symbol Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current
VZ Reverse Zener Voltage Change IZM Maximum Zener Current IR Reverse Leakage Current @ VR VR Breakdown Voltage IF Forward Current VF Forward Voltage @ IF VZ VR V IR VF IZT Zener Voltage Regulator http://onsemi.com 198 1N4678 Series ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 100 mA for all types) Zener Voltage (Note 3.) VZ (Volts) Leakage Current (Note 4.) @ IZT IR @ VR IZM (Note 5.)
VZ (Note 6.) Device (Note 2.) Device Marking Min Nom Max A µA Max Volts mA Volts 1N4678 1N4679 1N4680 1N4681 1N4682 1N4678 1N4679 1N4680 1N4681 1N4682 1.71 1.9 2.09 2.28 2.565 1.8 2.0 2.2 2.4 2.7 1.89 2.1 2.31 2.52 2.835 50 50 50 50 50 7.5 5 5 2 1 1 1 1 1 1 120 110 100 95 90 0.7 0.7 0.75 0.8 0.85 1N4683 1N4684 1N4685 1N4686 1N4687 1N4683 1N4684 1N4685 1N4686 1N4687 2.85 3.135 3.42 3.705 4.085 3.0 3.3 3.6 3.9 4.3 3.15 3.465 3.78 4.095 4.515 50 50 50 50 50 0.8 7.5 7.5 5.0 4.0 1 1.5 2 2 2 85 80 75 70 65 0.9 0.95 0.95 0.97 0.99 1N4688 1N4689 1N4690 1N4691 1N4692 1N4688 1N4689 1N4690 1N4691 1N4692 4.465 4.845 5.32 5.89 6.46 4.7 5.1 5.6 6.2 6.8 4.935 5.355 5.88 6.51 7.14 50 50 50 50 50 10 10 10 10 10 3 3 4 5 5.1 60 55 50 45 35 0.99 0.97 0.96 0.95 0.9 1N4693 1N4694 1N4695 1N4696 1N4697 1N4693 1N4694 1N4695 1N4696 1N4697 7.125 7.79 8.265 8.645 9.5 7.5 8.2 8.7 9.1 10 7.875 8.61 9.135 9.555 10.5 50 50 50 50 50 10 1 1 1 1 5.7 6.2 6.6 6.9 7.6 31.8 29 27.4 26.2 24.8 0.75 0.5 0.1 0.08 0.1 1N4698 1N4699 1N4700 1N4701 1N4702 1N4698 1N4699 1N4700 1N4701 1N4702 10.45 11.4 12.35 13.3 14.25 11 12 13 14 15 11.55 12.6 13.65 14.7 15.75 50 50 50 50 50 0.05 0.05 0.05 0.05 0.05 8.4 9.1 9.8 10.6 11.4 21.6 20.4 19 17.5 16.3 0.11 0.12 0.13 0.14 0.15 1N4703 1N4704 1N4705 1N4707 1N4711 1N4703 1N4704 1N4705 1N4707 1N4711 15.2 16.15 17.1 19 25.65 16 17 18 20 27 16.8 17.85 18.9 21 28.35 50 50 50 50 50 0.05 0.05 0.05 0.01 0.01 12.1 12.9 13.6 15.2 20.4 15.4 14.5 13.2 11.9 8.8 0.16 0.17 0.18 0.2 0.27 2. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ) The type numbers listed have a standard tolerance of ±5% on the nominal zener voltage. 3. ZENER VOLTAGE (VZ) MEASUREMENT The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C ± 1°C and 3/8″ lead length. 4. REVERSE LEAKAGE CURRENT (IR) Reverse leakage currents are guaranteed and measured at VR shown on the table. 5. MAXIMUM ZENER CURRENT RATINGS (IZM) Maximum zener current ratings are based on maximum zener voltage of the individual units and JEDEC 250 mW rating. 6. MAXIMUM VOLTAGE CHANGE (
VZ) Voltage change is equal to the difference between VZ at 100 A and at 10 A. http://onsemi.com 199 1N4678 Series PD, STEADY STATE POWER DISSIPATION (WATTS) 0.7 HEAT SINKS 0.6 0.5 0.4 3/8" 3/8" 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 TL, LEAD TEMPERATURE (°C) Figure 1. Steady State Power Derating http://onsemi.com 200 180 200 1N4678 Series θ JL , JUNCTIONTOLEAD THERMAL RESISTANCE (°C/W) APPLICATION NOTE — ZENER VOLTAGE Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from: TL = θLAPD + TA. θLA is the lead-to-ambient thermal resistance (°C/W) and PD is the power dissipation. The value for θLA will vary and depends on the device mounting method. θLA is generally 30 to 40°C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: 500 400 L L 300 2.4-60V 200 62-200V 100 0 0 0.2 0.4 0.6 0.8 1 L, LEAD LENGTH TO HEAT SINK (INCH) Figure 2. Typical Thermal Resistance 1000 7000 5000 TYPICAL LEAKAGE CURRENT AT 80% OF NOMINAL BREAKDOWN VOLTAGE 2000 1000 700 500 TJ = TL + ∆TJL. ∆TJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for dc power: 200 ∆TJL = θJLPD. I R , LEAKAGE CURRENT (µ A) For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ(∆TJ) may be estimated. Changes in voltage, VZ, can then be found from: ∆V = θVZTJ. θVZ, the zener voltage temperature coefficient, is found from Figures 4 and 5. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Surge limitations are given in Figure 7. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of Figure 7 be exceeded. 100 70 50 20 10 7 5 2 1 0.7 0.5 +125°C 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 +25°C 0.002 0.001 3 4 5 6 7 8 9 10 11 12 13 VZ, NOMINAL ZENER VOLTAGE (VOLTS) Figure 3. Typical Leakage Current http://onsemi.com 201 14 15 1N4678 Series TEMPERATURE COEFFICIENTS +12 θVZ , TEMPERATURE COEFFICIENT (mV/°C) θVZ , TEMPERATURE COEFFICIENT (mV/°C) (–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.) +10 +8 +6 +4 +2 RANGE 0 VZ@IZT (NOTE 2) -2 -4 2 3 4 5 6 7 8 9 VZ, ZENER VOLTAGE (VOLTS) 10 11 12 100 70 50 30 20 3 2 1 10 200 180 160 140 100 VZ@IZT (NOTE 2) 120 130 140 150 160 170 180 190 20 200 +2 20mA 0 0.01mA 1mA NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS NOTE: CHANGES IN ZENER CURRENT DO NOT NOTE: AFFECT TEMPERATURE COEFFICIENTS -2 -4 3 4 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 100 70 50 200 1V BIAS 20 10 50% OF VZBIAS 5 7 8 TA=25°C 0 BIAS 30 20 1VOLTBIAS 10 7 5 50% OF VZBIAS 3 2 2 1 6 Figure 5. Effect of Zener Current 0V BIAS 50 5 VZ, ZENER VOLTAGE (VOLTS) TA=25°C 100 100 VZ@IZ TA=25°C +4 Figure 4c. Range for Units 120 to 200 Volts 500 70 +6 VZ, ZENER VOLTAGE (VOLTS) 1000 30 50 VZ, ZENER VOLTAGE (VOLTS) Figure 4b. Range for Units 12 to 100 Volts θVZ , TEMPERATURE COEFFICIENT (mV/°C) θVZ , TEMPERATURE COEFFICIENT (mV/°C) Figure 4a. Range for Units to 12 Volts 120 VZ@IZ(NOTE 2) RANGE 10 7 5 1 2 5 10 20 50 1 100 120 VZ, ZENER VOLTAGE (VOLTS) 140 160 180 190 200 220 VZ, ZENER VOLTAGE (VOLTS) Figure 6a. Typical Capacitance 2.4–100 Volts Figure 6b. Typical Capacitance 120–200 Volts http://onsemi.com 202 Ppk , PEAK SURGE POWER (WATTS) 1N4678 Series 100 70 50 RECTANGULAR WAVEFORM TJ=25°C PRIOR TO INITIAL PULSE 11V-91V NONREPETITIVE 5% DUTY CYCLE 30 1.8V-10V NONREPETITIVE 20 10 7 5 10% DUTY CYCLE 20% DUTY CYCLE 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 PW, PULSE WIDTH (ms) Figure 7a. Maximum Surge Power 1.8–91 Volts Ppk , PEAK SURGE POWER (WATTS) RECTANGULAR WAVEFORM, TJ=25°C ZZ , DYNAMIC IMPEDANCE (OHMS) 1000 500 1000 700 500 300 200 200 47V 100 100 70 50 30 20 100-200VOLTS NONREPETITIVE 10 7 5 3 2 1 0.01 0.1 1 10 100 27V 50 20 6.2V 10 5 2 1 1000 0.1 0.2 0.5 Figure 7b. Maximum Surge Power DO-204AH 100–200 Volts 5mA 20 20mA 1000 50 100 50 20 75°C 10 25°C 5 150°C 0°C 2 2 20 100 2 1 10 200 10 7 5 1 5 MAXIMUM MINIMUM 500 I F , FORWARD CURRENT (mA) ZZ , DYNAMIC IMPEDANCE (OHMS) 100 70 50 2 Figure 8. Effect of Zener Current on Zener Impedance TJ=25°C iZ(rms)=0.1 IZ(dc) f=60Hz IZ=1mA 200 1 IZ, ZENER CURRENT (mA) PW, PULSE WIDTH (ms) 1000 700 500 TJ=25°C iZ(rms)=0.1 IZ(dc) f=60Hz VZ=2.7V 3 5 7 10 20 30 50 70 100 1 0.4 VZ, ZENER VOLTAGE (VOLTS) 0.5 0.6 0.7 0.8 0.9 1 VF, FORWARD VOLTAGE (VOLTS) Figure 9. Effect of Zener Voltage on Zener Impedance http://onsemi.com 203 Figure 10. Typical Forward Characteristics 1.1 1N4678 Series 20 10 I Z , ZENER CURRENT (mA) TA=25° 1 0.1 0.01 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 29 30 VZ, ZENER VOLTAGE (VOLTS) Figure 11. Zener Voltage versus Zener Current — VZ = 1 thru 16 Volts 10 I Z , ZENER CURRENT (mA) TA=25° 1 0.1 0.01 15 16 17 18 19 20 21 22 23 24 25 26 27 28 VZ, ZENER VOLTAGE (VOLTS) Figure 12. Zener Voltage versus Zener Current — VZ = 15 thru 30 Volts http://onsemi.com 204 1N4678 Series I Z , ZENER CURRENT (mA) 10 TA=25° 1 0.1 0.01 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 250 260 VZ, ZENER VOLTAGE (VOLTS) Figure 13. Zener Voltage versus Zener Current — VZ = 30 thru 105 Volts I Z , ZENER CURRENT (mA) 10 1 0.1 0.01 110 120 130 140 150 160 170 180 190 200 210 220 230 240 VZ, ZENER VOLTAGE (VOLTS) Figure 14. Zener Voltage versus Zener Current — VZ = 110 thru 220 Volts http://onsemi.com 205