1N4935GP

1N4935GP

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    DO-41(DO-204AL)

  • 描述:

    DIODE GEN PURP 200V 1A DO41

  • 数据手册
  • 价格&库存
1N4935GP 数据手册
1N4933GP-1N4937GP 1N4933GP - 1N4937GP Features • Low forward voltage drop. • High surge current capability. • High reliability. • High current capability. DO-41 COLOR BAND DENOTES CATHODE Fast Rectifiers (Glass Passivated) Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current, .375 " lead length @ TA = 75°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature IFSM Tstg TJ Value Units 4933G 4934 4935 4936 4937 50 100 200 400 600 V 1.0 A 30 A -65 to +175 °C -65 to +175 °C Value Units *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter PD Power Dissipation RθJA Thermal Resistance, Junction to Ambient Electrical Characteristics Symbol Parameter 4933G Forward Voltage @ 1.0 A trr Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Reverse Current @ rated VR TA = 25°C TA = 125°C Total Capacitance VR = 4.0 V, f = 1.0 MHz CT 2001 Fairchild Semiconductor Corporation W 55 °C/W Device Units TA = 25°C unless otherwise noted VF IR 2.73 4934 4935 4936 4937 1.2 V 150 ns 5.0 100 µA µA 15 pF 1N4933GP-1N4937GP, Rev. C 1N4933GP-1N4937GP 20 1 10 0.8 Forward Current, IF [A] Average Rectified Forward Current, IF [A] Typical Characteristics 0.6 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" 9.0 mm LEAD LENGTHS 0.4 0.2 0 0 25 50 75 100 125 Ambient Temperature [ºC] 150 0.3 0.1 TA J = 25º C Pulse Width = 300µ 200µ µS 2% Duty Cycle 0.01 0.6 175 0.8 1 1.2 1.4 1.6 Forward Voltage, VF [V] 1.8 2 Figure 2. Forward Voltage Characteristics Reverse Characteristics 100 40 T A= 100 º C 30 Reverse Current, IR [mA] Peak Forward Surge Current, IFSM [A] 1 0.03 Figure 1. Forward Current Derating Curve 20 10 0 3 1 2 5 10 20 Number of Cycles at 60Hz 50 100 Figure 3. Non-Repetitive Surge Current 10 1 TA J = 25º C 0.1 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs Reverse Voltage Total Capacitance, CT [pF] 20 10 5 2 1 1 2 5 10 20 Reverse Voltage, V R [V] 50 100 Figure 5. Total Capacitance 50Ω NONINDUCTIVE 50Ω NONINDUCTIVE +0.5A trr (-) DUT 50V (approx) 50Ω NONINDUCTIVE Pulse Generator (Note 2) 0 -0.25A (+) OSCILLOSCOPE (Note 1) NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms. -1.0A 1.0cm SET TIME BASE FOR 5/ 10 ns/ cm Reverse Recovery Time Characterstic and Test Circuit Diagram 2001 Fairchild Semiconductor Corporation 1N4933GP-1N4937GP, Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET  VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4
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