1N5818

1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features http://onsemi.com • • • • Extremely Low VF Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency These are Pb−Free Devices* SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: • • 260°C Max for 10 Seconds Polarity: Cathode Indicated by Polarity Band ESD Ratings: Machine Model = C (>400 V) Human Body Model = 3B (>8000 V) AXIAL LEAD CASE 59 STYLE 1 MARKING DIAGRAM A 1N581x YYWWG G A =Assembly Location 1N581x =Device Number x= 7, 8, or 9 YY =Year WW =Work Week G =Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 Preferred devices are recommended choices for future use and best overall value. 1 July, 2006 − Rev. 10 Publication Order Number: 1N5817/D 1N5817, 1N5818, 1N5819 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non−Repetitive Peak Reverse Voltage RMS Reverse Voltage Average Rectified Forward Current (Note 1), (VR(equiv) ≤ 0.2 VR(dc), TL = 90°C, RqJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C) Ambient Temperature (Rated VR(dc), PF(AV) = 0, RqJA = 80°C/W) Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions, half−wave, single phase 60 Hz, TL = 70°C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) Peak Operating Junction Temperature (Forward Current applied) Symbol VRRM VRWM VR VRSM VR(RMS) IO TA IFSM TJ, Tstg TJ(pk) 85 1N5817 20 1N5818 30 1N5819 40 Unit V 24 14 36 21 1.0 80 25 (for one cycle) −65 to +125 150 48 28 V V A 75 °C A °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS (Note 1) Characteristic Thermal Resistance, Junction−to−Ambient Symbol RqJA Max 80 Unit °C/W ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) Symbol vF 1N5817 0.32 0.45 0.75 1.0 10 1N5818 0.33 0.55 0.875 1.0 10 1N5819 0.34 0.6 0.9 1.0 10 Unit V Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) (TL = 25°C) (TL = 100°C) 1. Lead Temperature reference is cathode lead 1/32 in from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. IR mA http://onsemi.com 2 1N5817, 1N5818, 1N5819 NOTE 3. — DETERMINING MAXIMUM RATINGS 125 TR, REFERENCE TEMPERATURE ( C) Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). (1) TA(max) = TJ(max) − RqJAPF(AV) − RqJAPR(AV) where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction temperature (125°C or the temperature at which thermal runaway occurs, whichever is lowest) PF(AV) = Average forward power dissipation PR(AV) = Average reverse power dissipation RqJA = Junction−to−ambient thermal resistance 40 30 23 ° 115 105 95 RqJA (°C/W) = 110 80 60 85 75 Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). TR = TJ(max) − RqJAPR(AV) (2) TR, REFERENCE TEMPERATURE ( C) 2.0 3.0 4.0 5.0 7.0 10 VR, DC REVERSE VOLTAGE (VOLTS) 15 20 Figure 1. Maximum Reference Temperature 1N5817 125 ° 40 115 30 23 Substituting equation (2) into equation (1) yields: TA(max) = TR − RqJAPF(AV) (3) Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125°C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115°C. The data of Figures 1, 2, and 3 is based upon dc conditions. For use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, that is: VR(equiv) = Vin(PK) x F (4) 105 95 RqJA (°C/W) = 110 80 60 85 75 3.0 4.0 TR, REFERENCE TEMPERATURE ( C) The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. EXAMPLE: Find TA(max) for 1N5818 operated in a 12−volt dc supply using a bridge circuit with capacitive filter such that IDC = 0.4 A (IF(AV) = 0.5 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RqJA = 80°C/W. Step 1. Find VR(equiv). Read F = 0.65 from Table 1, Step 1. Find ∴ VR(equiv) = (1.41)(10)(0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read TR = 109°C Step 1. Find @ VR = 9.2 V and RqJA = 80°C/W. Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W I(FM) @ = 10 and IF(AV) = 0.5 A. I(AV) Step 4. Find TA(max) from equation (3). Step 4. Find TA(max) = 109 − (80) (0.5) = 69°C. **Values given are for the 1N5818. Power is slightly lower for the 1N5817 because of its lower forward voltage, and higher for the 1N5819. 5.0 7.0 10 15 20 VR, DC REVERSE VOLTAGE (VOLTS) 30 Figure 2. Maximum Reference Temperature 1N5818 125 ° 115 40 30 23 105 95 RqJA (°C/W) = 110 80 60 85 75 4.0 5.0 7.0 10 15 20 VR, DC REVERSE VOLTAGE (VOLTS) 30 40 Figure 3. Maximum Reference Temperature 1N5819 Table 1. Values for Factor F Circuit Load Sine Wave Square Wave Half Wave Resistive 0.5 0.75 Capacitive* 1.3 Full Wave, Bridge Resistive 0.5 Capacitive 0.65 Full Wave, Center Tapped* † Resistive 1.0 1.5 Capacitive 1.3 1.5 **Note that VR(PK) ≈ 2.0 Vin(PK). 1.5 0.75 0.75 †Use line to center tap voltage for Vin. http://onsemi.com 3 1N5817, 1N5818, 1N5819 R θ JL THERMAL RESISTANCE, JUNCTION−TO−LEAD ( C/W) , ° PF(AV), AVERAGE POWER DISSIPATION (WATTS) 90 80 70 60 MAXIMUM TYPICAL BOTH LEADS TO HEATSINK, EQUAL LENGTH 5.0 3.0 2.0 Sine Wave I(FM) = π (Resistive Load) I(AV) 50 40 30 Capacitive 1.0 Loads 0.7 0.5 0.3 0.2 0.1 0.07 0.05 { 5 10 20 TJ ≈ 125°C dc SQUARE WAVE 20 10 1 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0 0.2 L, LEAD LENGTH (INCHES) 0.4 0.6 0.8 1.0 2.0 IF(AV), AVERAGE FORWARD CURRENT (AMP) 4.0 Figure 4. Steady−State Thermal Resistance Figure 5. Forward Power Dissipation 1N5817−19 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 t, TIME (ms) 50 100 200 500 1.0k 2.0k 5.0k 10k ZqJL(t) = ZqJL • r(t) tp Ppk t1 Ppk TIME DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, i.e.: r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp. Figure 6. Thermal Response NOTE 4. — MOUNTING DATA Mounting Method 1 P.C. Board with 1−1/2″ x 1−1/2″ copper surface. Mounting Method 3 P.C. Board with 1−1/2″ x 1−1/2″ copper surface. Data shown for thermal resistance, junction−to−ambient (RqJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RqJA IN STILL AIR Mounting Method 1 L = 3/8″ L L Lead Length, L (in) 1/8 52 67 1/4 65 80 50 1/2 72 87 3/4 85 100 RqJA °C/W °C/W °C/W L L VECTOR PIN MOUNTING Mounting Method 2 BOARD GROUND PLANE 2 3 http://onsemi.com 4 1N5817, 1N5818, 1N5819 NOTE 5. — THERMAL CIRCUIT MODEL (For heat conduction through the leads) RqS(A) TA(A) TL(A) TC(A) TJ RqL(A) RqJ(A) RqJ(K) PD TC(K) TL(K) RqL(K) RqS(K) TA(K) Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heatsink. Terms in the model signify: TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RqS = Thermal Resistance, Heatsink to Ambient RqL = Thermal Resistance, Lead to Heatsink RqJ = Thermal Resistance, Junction to Case PD = Power Dissipation IFSM, PEAK SURGE CURRENT (AMP) (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RqL = 100°C/W/in typically and 120°C/W/in maximum RqJ = 36°C/W typically and 46°C/W maximum. 30 20 TL = 70°C f = 60 Hz 10 7.0 5.0 Surge Applied at Rated Load Conditions 3.0 1.0 2.0 3.0 5.0 7.0 10 20 NUMBER OF CYCLES 30 40 70 100 1 Cycle 20 10 7.0 iF, INSTANTANEOUS FORWARD CURRENT (AMP) 5.0 3.0 2.0 25°C TC = 100°C 1.0 0.7 0.5 0.3 0.2 30 20 I R, REVERSE CURRENT (mA) 15 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.05 0.03 100°C 75°C TJ = 125°C Figure 8. Maximum Non−Repetitive Surge Current 0.1 0.07 0.05 0.03 0.02 0.1 25°C 1N5817 1N5818 1N5819 0 4.0 8.0 12 16 20 24 28 32 36 40 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Forward Voltage Figure 9. Typical Reverse Current http://onsemi.com 5 1N5817, 1N5818, 1N5819 NOTE 6. — HIGH FREQUENCY OPERATION Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. 200 C, CAPACITANCE (pF) 100 70 50 30 20 TJ = 25°C f = 1.0 MHz 1N5817 1N5818 1N5819 10 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 10. Typical Capacitance ORDERING INFORMATION Device 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG 1N5819 1N5819G 1N5819RL 1N5819RLG Package Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* Shipping † 1000 Units / Bag 1000 Units / Bag 5000 / Tape & Reel 5000 / Tape & Reel 1000 Units / Bag 1000 Units / Bag 5000 / Tape & Reel 5000 / Tape & Reel 1000 Units / Bag 1000 Units / Bag 5000 / Tape & Reel 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 6 1N5817, 1N5818, 1N5819 PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 −−− 0.050 1.000 −−− MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 −−− 1.27 25.40 −−− K F D DIM A B D F K A POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) F K STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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