1N5937BRLG

1N5913B Series 3 W DO- 41 Surmetic 30 Zener Voltage Regulators This is a complete series of 3 W Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon- oxide passivated junctions. All this in an axial- lead, transfer- molded plastic package that offers protection in all common environmental conditions. Features       www.onsemi.com Cathode Anode Zener Voltage Range - 3.3 V to 200 V ESD Rating of Class 3 (>16 KV) per Human Body Model Surge Rating of 98 W @ 1 ms Maximum Limits Guaranteed on up to Six Electrical Parameters Package No Larger than the Conventional 1 W Package Pb- Free Packages are Available AXIAL LEAD CASE 59 PLASTIC STYLE 1 Mechanical Characteristics CASE: Void free, transfer- molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are MARKING DIAGRAM readily solderable A 1N 59xxB YYWWG G MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 260C, 1/16 from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any MAXIMUM RATINGS Symbol Value Unit Max. Steady State Power Dissipation @ TL = 75C, Lead Length = 3/8 Derate above 75C Rating PD 3 W 24 mW/C Steady State Power Dissipation @ TA = 50C Derate above 50C PD 1 W 6.67 mW/C - 65 to +200 C Operating and Storage Temperature Range TJ, Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A = Assembly Location 1N59xxB = Device Number YY = Year WW = Work Week G = Pb- Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† 1N59xxB, G Axial Lead (Pb- Free) 2000 Units/Box 1N59xxBRL, G Axial Lead (Pb- Free) 6000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb- Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2006 December, 2019 - Rev. 7 1 Publication Order Number: 1N5913B/D 1N5913B Series ELECTRICAL CHARACTERISTICS I (TL = 30C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Breakdown Voltage IF Forward Current VF Forward Voltage @ IF IZM Maximum DC Zener Current VZ VR V IR VF IZT Zener Voltage Regulator www.onsemi.com 2 1N5913B Series ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types) Zener Voltage (Note 2) VZ (Volts) Zener Impedance (Note 3) Leakage Current @ IZT ZZT @ IZT Max mA Ω Ω mA mA Max Volts mA 3.3 4.7 5.6 6.2 6.8 3.47 4.94 5.88 6.51 7.14 113.6 79.8 66.9 60.5 55.1 10 5 2 2 2.5 500 500 250 200 200 1 1 1 1 1 100 5 5 5 5 1 1.5 3 4 5.2 454 319 267 241 220 7.79 8.65 9.50 10.45 11.40 8.2 9.1 10 11 12 8.61 9.56 10.50 11.55 12.60 45.7 41.2 37.5 34.1 31.2 3.5 4 4.5 5.5 6.5 400 500 500 550 550 0.5 0.5 0.25 0.25 0.25 5 5 5 1 1 6.5 7 8 8.4 9.1 182 164 150 136 125 1N5929B 1N5930B 1N5931B 1N5932B 1N5933B 14.25 15.20 17.10 19.00 20.90 15 16 18 20 22 15.75 16.80 18.90 21.00 23.10 25.0 23.4 20.8 18.7 17.0 9 10 12 14 17.5 600 600 650 650 650 0.25 0.25 0.25 0.25 0.25 1 1 1 1 1 11.4 12.2 13.7 15.2 16.7 100 93 83 75 68 1N5934B, G 1N5935B, G 1N5936B, G 1N5937B, G 1N5938B, G 1N5934B 1N5935B 1N5936B 1N5937B 1N5938B 22.80 25.65 28.50 31.35 34.20 24 27 30 33 36 25.20 28.35 31.50 34.65 37.80 15.6 13.9 12.5 11.4 10.4 19 23 28 33 38 700 700 750 800 850 0.25 0.25 0.25 0.25 0.25 1 1 1 1 1 18.2 20.6 22.8 25.1 27.4 62 55 50 45 41 1N5940B, G 1N5941B, G 1N5942B, G 1N5943B, G 1N5944B, G 1N5940B 1N5941B 1N5942B 1N5943B 1N5944B 40.85 44.65 48.45 53.20 58.90 43 47 51 56 62 45.15 49.35 53.55 58.80 65.10 8.7 8.0 7.3 6.7 6.0 53 67 70 86 100 950 1000 1100 1300 1500 0.25 0.25 0.25 0.25 0.25 1 1 1 1 1 32.7 35.8 38.8 42.6 47.1 34 31 29 26 24 1N5946B, G 1N5947B, G 1N5948B, G 1N5950B, G 1N5946B 1N5947B 1N5948B 1N5950B 71.25 77.90 86.45 104.5 75 82 91 110 78.75 86.10 95.55 115.5 5.0 4.6 4.1 3.4 140 160 200 300 2000 2500 3000 4000 0.25 0.25 0.25 0.25 1 1 1 1 56 62.2 69.2 83.6 20 18 16 13 1N5951B, G 1N5952B, G 1N5953B, G 1N5954B, G 1N5955B, G 1N5951B 1N5952B 1N5953B 1N5954B 1N5955B 114 123.5 142.5 152 171 120 130 150 160 180 126 136.5 157.5 168 189 3.1 2.9 2.5 2.3 2.1 380 450 600 700 900 4500 5000 6000 6500 7000 0.25 0.25 0.25 0.25 0.25 1 1 1 1 1 91.2 98.8 114 121.6 136.8 12 11 10 9 8 1N5956B, G 1N5956B 190 200 210 1.9 1200 8000 0.25 1 152 7 Device† (Note 1) Device Marking Min Nom 1N5913B, G 1N5917B, G 1N5919B, G 1N5920B, G 1N5921B, G 1N5913B 1N5917B 1N5919B 1N5920B 1N5921B 3.14 4.47 5.32 5.89 6.46 1N5923B, G 1N5924B, G 1N5925B, G 1N5926B, G 1N5927B, G 1N5923B 1N5924B 1N5925B 1N5926B 1N5927B 1N5929B, G 1N5930B, G 1N5931B, G 1N5932B, G 1N5933B, G ZZK @ IZK IR @ VR IZM Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. †The “G’’ suffix indicates Pb- Free package available. 1. TOLERANCE AND TYPE NUMBER DESIGNATION Tolerance designation - device tolerance of 5% are indicated by a “B” suffix. 2. ZENER VOLTAGE (VZ) MEASUREMENT ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30C 1C, 3/8 from the diode body. 3. ZENER IMPEDANCE (ZZ) DERIVATION The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the DC zener current (IZT or IZK) is superimposed on IZT or IZK. www.onsemi.com 3 PD, STEADY STATE DISSIPATION (WATTS) 1N5913B Series 5 L = LEAD LENGTH TO HEAT SINK L = 1/8 4 L = 3/8 3 2 L = 1 1 0 0 20 40 60 80 100 120 140 160 TL, LEAD TEMPERATURE (C) 180 200 Figure 1. Power Temperature Derating Curve JL(t, D) TRANSIENT THERMAL RESISTANCE JUNCTION-TO-LEAD (C/W) 30 20 10 7 5 3 2 1 0.7 0.5 D =0.5 0.2 0.1 t2 DUTY CYCLE, D =t1/t2 0.02 0.01 NOTE: BELOW 0.1 SECOND, THERMAL RESPONSE CURVE IS APPLICABLE TO ANY LEAD LENGTH (L). D=0 0.3 0.0001 0.0002 t1 PPK 0.05 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 t, TIME (SECONDS) 0.1 0.2 SINGLE PULSE ΔTJL = θJL (t)PPK REPETITIVE PULSES ΔTJL = θJL (t,D)PPK 0.5 1 2 5 10 PPK , PEAK SURGE POWER (WATTS) 1K RECTANGULAR NONREPETITIVE WAVEFORM TJ = 25C PRIOR TO INITIAL PULSE 500 300 200 100 50 30 20 10 0.1 0.2 0.3 0.5 1 2 3 5 10 PW, PULSE WIDTH (ms) 20 30 50 IR , REVERSE LEAKAGE ( Adc) @ VR AS SPECIFIED IN ELEC. CHAR. TABLE Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch 3 2 1 0.5 0.02 0.01 0.005 0.002 0.001 0.0005 0.0003 100 TA = 125C 0.2 0.1 0.05 TA = 125C 1 Figure 3. Maximum Surge Power 2 5 10 20 50 100 NOMINAL VZ (VOLTS) 200 400 Figure 4. Typical Reverse Leakage www.onsemi.com 4 1000 1N5913B Series APPLICATION NOTE Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from: ΔTJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses (L = 3/8 inch) or from Figure 10 for dc power. ΔTJL = θJL PD For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ (ΔTJ) may be estimated. Changes in voltage, VZ, can then be found from: TL = θLA PD + TA θLA is the lead-to-ambient thermal resistance (C/W) and PD is the power dissipation. The value for θLA will vary and depends on the device mounting method. θLA is generally 30- 40C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: ΔV = θVZ ΔTJ θVZ, the zener voltage temperature coefficient, is found from Figures 5 and 6. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 2 should not be used to compute surge capability. Surge limitations are given in Figure 3. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 3 be exceeded. TJ = TL + ΔTJL www.onsemi.com 5 1N5913B Series TEMPERATURE COEFFICIENT RANGES 10  VZ, TEMPERATURE COEFFICIENT (mV/ C) @ I ZT  VZ, TEMPERATURE COEFFICIENT (mV/ C) @ I ZT (90% of the Units are in the Ranges Indicated) 1000 8 6 4 RANGE 2 0 -2 -4 3 4 5 6 7 8 9 10 VZ, ZENER VOLTAGE @ IZT (VOLTS) 11 12 500 200 100 50 20 10 10 20 50 100 200 400 VZ, ZENER VOLTAGE @ IZT (VOLTS) Figure 5. Units To 12 Volts 1000 Figure 6. Units 10 To 400 Volts ZENER VOLTAGE versus ZENER CURRENT 100 100 50 30 20 50 30 20 IZ , ZENER CURRENT (mA) IZ, ZENER CURRENT (mA) (Figures 7, 8 and 9) 10 5 3 2 1 0.5 0.3 0.2 0.1 0 1 2 3 4 5 6 7 VZ, ZENER VOLTAGE (VOLTS) 8 9 10 5 3 2 1 0.5 0.3 0.2 0.1 10 0 10 20 Figure 7. VZ = 3.3 thru 10 Volts 2 1 0.5 0.2 200 250 300 350 VZ, ZENER VOLTAGE (VOLTS) 400 JL, JUNCTION-TO-LEAD THERMAL RESISTANCE ( C/W) IZ , ZENER CURRENT (mA) 5 150 80 90 100 Figure 8. VZ = 12 thru 82 Volts 10 0.1 100 30 40 50 60 70 VZ, ZENER VOLTAGE (VOLTS) 80 70 60 50 L 40 L 30 TL 20 PRIMARY PATH OF CONDUCTION IS THROUGH THE CATHODE LEAD 10 0 0 Figure 9. VZ = 100 thru 400 Volts 1/8 1/4 3/8 1/2 5/8 3/4 L, LEAD LENGTH TO HEAT SINK (INCH) 7/8 Figure 10. Typical Thermal Resistance www.onsemi.com 6 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U DATE 15 FEB 2005 B K STYLE 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. D STYLE 2 F A SCALE 1:1 POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) F K DIM A B D F K INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 −−− 0.050 1.000 −−− MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 −−− 1.27 25.40 −−− GENERIC MARKING DIAGRAM* STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE STYLE 2: NO POLARITY A xxx xxx YYWW STYLE 1 xxx A YY WW A xxx xxx YYWW STYLE 2 = Specific Device Code = Assembly Location = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98ASB42045B AXIAL LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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