1N6277A

1N6267A Series 1500 Watt Mosorbt Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetict axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits. Features Cathode Anode AXIAL LEAD CASE 41A PLASTIC • • • • • • • • MARKING DIAGRAM A 1.5KE xxxA 1N6 xxxA YYWWG G A 1.5KExxxA 1N6xxxA YY WW = Assembly Location = ON Device Code = JEDEC Device Code = Year = Work Week = (See Table on Page 3) G = Pb−Free Package (Note: Microdot may be in either location) Working Peak Reverse Voltage Range − 5.8 V to 214 V Peak Power − 1500 Watts @ 1 ms ESD Rating of Class 3 (>16 kV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 mA Above 10 V UL 497B for Isolated Loop Circuit Protection Response Time is Typically < 1 ns Pb−Free Packages are Available Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: ORDERING INFORMATION Device 1.5KExxxA 1.5KExxxAG 1.5KExxxARL4 1.5KExxxARL4G 1N6xxxA 1N6xxxAG 1N6xxxARL4 1N6xxxARL4G Package Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Axial Lead Axial Lead (Pb−Free) Shipping † 500 Units/Box 500 Units/Box 1500/Tape & Reel 1500/Tape & Reel 500 Units/Box 500 Units/Box 1500/Tape & Reel 1500/Tape & Reel 230°C, 1/16 in from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1 February, 2007 − Rev. 8 Publication Order Number: 1N6267A/D 1N6267A Series MAXIMUM RATINGS Rating Peak Power Dissipation (Note 1) @ TL ≤ 25°C Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8 in Derated above TL = 75°C Thermal Resistance, Junction−to−Lead Forward Surge Current (Note 2) @ TA = 25°C Operating and Storage Temperature Range Symbol PPK PD Value 1500 5.0 20 RqJL IFSM TJ, Tstg 20 200 − 65 to +175 Unit W W mW/°C °C/W A °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. NOTES: Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max., IF (Note 3) = 100 A) Symbol IPP VC VRWM IR VBR IT QVBR IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF VC VBR VRWM IF I IR VF IT V IPP Uni−Directional TVS http://onsemi.com 2 1N6267A Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A) JEDEC Device† (Note 4) 1N6267A, G 1N6268A, G 1N6269A, G 1N6270A, G 1N6271A, G 1N6272A, G 1N6273A, G 1N6274A, G 1N6275A, G 1N6276A, G 1N6277A, G 1N6278A, G 1N6279A, G 1N6280A, G 1N6281A, G 1N6282A, G 1N6283A, G 1N6284A, G 1N6285A, G 1N6286A, G 1N6287A, G 1N6288A, G 1N6289A, G 1N6290A, G 1N6291A, G 1N6292A, G 1N6293A, G 1N6294A, G 1N6295A, G 1N6296A, G 1N6297A, G 1N6298A, G 1N6299A, G 1N6300A, G 1N6301A, G 1N6302A, G* 1N6303A, G VRWM (Note 5) (Volts) 5.8 6.4 7.02 7.78 8.55 9.4 10.2 11.1 12.8 13.6 15.3 17.1 18.8 20.5 23.1 25.6 28.2 30.8 33.3 36.8 40.2 43.6 47.8 53 58.1 64.1 70.1 77.8 85.5 94 102 111 128 136 145 154 171 185 214 Breakdown Voltage IR @ VRWM (mA) 1000 500 200 50 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 VBR (Note 6) (Volts) Min 6.45 7.13 7.79 8.65 9.5 10.5 11.4 12.4 14.3 15.2 17.1 19 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95 105 114 124 143 152 162 171 190 209 237 Nom 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 170 180 200 220 250 Max 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 15.8 16.8 18.9 21 23.1 25.2 28.4 31.5 34.7 37.8 41 45.2 49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.5 105 116 126 137 158 168 179 189 210 231 263 @ IT (mA) 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 VC @ IPP (Note 7) VC (Volts) 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77 85 92 103 113 125 137 152 165 179 207 219 234 246 274 328 344 IPP (A) 143 132 124 112 103 96 90 82 71 67 59.5 54 49 45 40 36 33 30 28 25.3 23.2 21.4 19.5 17.7 16.3 14.6 13.3 12 11 9.9 9.1 8.4 7.2 6.8 6.4 6.1 5.5 4.6 5 QVBR (%/°C) 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081 0.084 0.086 0.088 0.09 0.092 0.094 0.096 0.097 0.098 0.099 0.1 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.109 0.109 Device† 1.5KE6.8A, G 1.5KE7.5A, G 1.5KE8.2A, G 1.5KE9.1A, G 1.5KE10A, G 1.5KE11A, G 1.5KE12A, G 1.5KE13A, G 1.5KE15A, G 1.5KE16A, G 1.5KE18A, G 1.5KE20A, G 1.5KE22A, 1.5KE24A, 1.5KE27A, 1.5KE30A, G G G G 1.5KE33A, G 1.5KE36A, G 1.5KE39A, G 1.5KE43A, G 1.5KE47A, G 1.5KE51A, G 1.5KE56A, G 1.5KE62A, G 1.5KE68A, 1.5KE75A, 1.5KE82A, 1.5KE91A, G G G G 1.5KE100A, G 1.5KE110A, G 1.5KE120A, G 1.5KE130A, G 1.5KE150A, 1.5KE160A, 1.5KE170A, 1.5KE180A, G G G G 1.5KE200A, G 1.5KE220A, G 1.5KE250A, G Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. 3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. 4. Indicates JEDEC registered data 5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating voltage level. 6. VBR measured at pulse test current IT at an ambient temperature of 25°C 7. Surge current waveform per Figure 5 and derate per Figures 1 and 2. †The “G” suffix indicates Pb−Free package available. *Not Available in the 1500/Tape & Reel http://onsemi.com 3 1N6267A Series NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 5 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ T = 25°C A 100 PPK , PEAK POWER (kW) 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) 10 1 0.1 ms 1 ms 10 ms 100 ms 1 ms 10 ms tP, PULSE WIDTH Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve 1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C 10,000 MEASURED @ ZERO BIAS 10,000 1N6267A/1.5KE6.8A through 1N6303A/1.5KE200A MEASURED @ ZERO BIAS C, CAPACITANCE (pF) 1000 C, CAPACITANCE (pF) 1000 MEASURED @ VRWM 100 MEASURED @ VRWM 100 10 1 10 100 1000 10 1 10 100 1000 VBR, BREAKDOWN VOLTAGE (VOLTS) VBR, BREAKDOWN VOLTAGE (VOLTS) Figure 3. Capacitance versus Breakdown Voltage PD , STEADY STATE POWER DISSIPATION (WATTS) 3/8″ 5 4 3 2 1 0 0 25 50 75 100 125 150 175 TL, LEAD TEMPERATURE (°C) 200 0 0 IPP, VALUE (%) 3/8″ 100 tr PEAK VALUE − IPP PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. tr ≤ 10 ms HALF VALUE − 50 tP IPP 2 1 2 t, TIME (ms) 3 4 Figure 4. Steady State Power Derating Figure 5. Pulse Waveform http://onsemi.com 4 1N6267A Series 1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C 1000 500 IT , TEST CURRENT (AMPS) 200 100 50 20 10 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) TL = 25°C tP = 10 ms VBR(NOM) = 6.8 to 13 V 20 V 43 V 24 V 1000 500 IT , TEST CURRENT (AMPS) 200 100 50 20 10 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) 180 V 120 V TL = 25°C tP = 10 ms 1.5KE6.8CA through 1.5KE200CA VBR(NOM) = 6.8 to 13 V 20 V 24 V 43 V 75 V Figure 6. Dynamic Impedance 1 0.7 0.5 0.3 DERATING FACTOR 0.2 0.1 0.07 0.05 0.03 0.02 10 ms 0.01 0.1 0.2 0.5 1 2 5 10 D, DUTY CYCLE (%) 20 50 100 PULSE WIDTH 10 ms 1 ms 100 ms Figure 7. Typical Derating Factor for Duty Cycle APPLICATION NOTES RESPONSE TIME In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 8. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 9. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. These devices have excellent response time, typically in the picosecond range and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. DUTY CYCLE DERATING The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or http://onsemi.com 5 1N6267A Series ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 ms pulse. However, when the derating factor for a given pulse of Figure 7 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend. TYPICAL PROTECTION CIRCUIT Zin Vin LOAD VL V Vin (TRANSIENT) VL V OVERSHOOT DUE TO INDUCTIVE EFFECTS Vin (TRANSIENT) VL Vin td tD = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure 8. Figure 9. UL RECOGNITION* The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #E210057. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric VoltageWithstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category. *Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA CLIPPER BIDIRECTIONAL DEVICES 1. Clipper-bidirectional devices are available in the 1.5KEXXA series and are designated with a “CA” suffix; for example, 1.5KE18CA. Contact your nearest ON Semiconductor representative. 2. Clipper-bidirectional part numbers are tested in both directions to electrical parameters in preceding table (except for VF which does not apply). 3. The 1N6267A through 1N6303A series are JEDEC registered devices and the registration does not include a “CA” suffix. To order clipper-bidirectional devices one must add CA to the 1.5KE device title. http://onsemi.com 6 1N6267A Series OUTLINE DIMENSIONS MOSORB CASE 41A−04 ISSUE D B D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD FINISH AND DIAMETER UNCONTROLLED IN DIMENSION P. 4. 041A−01 THRU 041A−03 OBSOLETE, NEW STANDARD 041A−04. INCHES MIN MAX 0.335 0.374 0.189 0.209 0.038 0.042 1.000 −−− −−− 0.050 MILLIMETERS MIN MAX 8.50 9.50 4.80 5.30 0.96 1.06 25.40 −−− −−− 1.27 K P P A DIM A B D K P K Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 1N6267A/D