1N91x, 1N4x48, FDLL914,
FDLL4x48
Small Signal Diode
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ORDERING INFORMATION
Part Number
Marking
Package
Packing Method
1N914
914
DO−204AH (DO−35)
Bulk
1N914−T50A
914
DO−204AH (DO−35)
Ammo
1N914TR
914
DO−204AH (DO−35)
Tape and Reel
1N914ATR
914A
DO−204AH (DO−35)
Tape and Reel
1N914B
914B
DO−204AH (DO−35)
Bulk
1N914BTR
914B
DO−204AH (DO−35)
Tape and Reel
1N916
916
DO−204AH (DO−35)
Bulk
1N916A
916A
DO−204AH (DO−35)
Bulk
1N916B
916B
DO−204AH (DO−35)
Bulk
1N4148
4148
DO−204AH (DO−35)
Bulk
1N4148TA
4148
DO−204AH (DO−35)
Ammo
1N4148−T26A
4148
DO−204AH (DO−35)
Ammo
1N4148−T50A
4148
DO−204AH (DO−35)
Ammo
1N4148TR
4148
DO−204AH (DO−35)
Tape and Reel
1N4148−T50R
4148
DO−204AH (DO−35)
Tape and Reel
1N4448
4448
DO−204AH (DO−35)
Bulk
1N4448TR
4448
DO−204AH (DO−35)
Tape and Reel
FDLL914
Black
SOD−80
Tape and Reel
FDLL914A
Black
SOD−80
Tape and Reel
FDLL914B
Black
SOD−80
Tape and Reel
FDLL4148
Black
SOD−80
Tape and Reel
FDLL4148−D87Z
Black
SOD−80
Tape and Reel
FDLL4448
Black
SOD−80
Tape and Reel
FDLL4448−D87Z
Black
SOD−80
Tape and Reel
DO−35
Cathode is denoted with a black band
Cathode Band
SOD80
LL−34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
SOD−80 COLOR BAND MARKING
DEVICE
© Semiconductor Components Industries, LLC, 2002
October, 2017 − Rev. 4
1
FDLL914
FDLL914A
FDLL914B
FDLL4148
FDLL4448
1ST BAND
BLACK
BLACK
BLACK
BLACK
BLACK
-1st band denotes cathode terminal
and has wider width
Publication Order Number:
1N914/D
1N91x, 1N4x48, FDLL914, FDLL4x48
ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted) (Note 1)
Rating
Symbol
Value
Unit
VRRM
100
V
Average Rectified Forward Current
IO
200
mA
DC Forward Current
IF
300
mA
Recurrent Peak Forward Current
If
400
mA
IFSM
1.0
A
4.0
A
TSTG
−65 to +200
°C
TJ
−55 to +175
°C
Maximum Repetitive Reverse Voltage
Non−repetitive Peak Forward Surge Current
Pulse Width = 1.0 s
Pulse Width = 1.0 ms
Storage Temperature Range
Operating Junction Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTICS
Parameter
Symbol
Max
Unit
PD
500
mW
RqJA
300
°C
Conditions
Min
Max
Unit
IR = 100 mA
100
Power Dissipation
Thermal Resistance, Junction−to−Ambient
ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) (Note 2)
Symbol
Parameter
VR
Breakdown Voltage
VF
Forward Voltage
IR
CT
trr
IR = 5.0 mA
75
914B / 4448
IF = 5.0 mA
0.62
0.72
V
916B
IF = 5.0 mA
0.63
0.73
V
914 / 916 / 4148
IF = 10 mA
1.0
V
914A / 916A
IF = 20 mA
1.0
V
916B
IF = 20 mA
1.0
V
914B / 4448
IF = 100 mA
1.0
V
VR = 20 V
0.025
mA
VR = 20 V, TA = 150°C
50
mA
VR = 75 V
5.0
mA
916/916A/916B/4448
VR = 0, f = 1.0 MHz
2.0
pF
914/914A/914B/4148
VR = 0, f = 1.0 MHz
4.0
pF
IF = 10 mA, VR = 6.0 V (600 mA)
Irr = 1.0 mA, RL = 100 W
4.0
ns
Reverse Leakage
Total Capacitance
V
Reverse Recovery Time
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Non−recurrent square wave PW = 8.3 ms.
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2
1N91x, 1N4x48, FDLL914, FDLL4x48
TYPICAL PERFORMANCE CHARACTERISTICS
120
160
o
Ta= 25 C
o
Ta=25 C
Reverse Current, I R [nA]
100
Reverse Voltage, V R [V]
150
140
130
120
110
1
2
3
5
10
20
30
50
80
60
40
20
0
100
10
20
70
100
Figure 2. Reverse Current vs. Reverse Voltage
IR − 10 to 100 V
750
550
o
Ta= 25 C
o
Ta= 25 C
700
Forward Voltage, VF [mV]
500
Forward Voltage, VR [mV]
50
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 1. Reverse Voltage vs. Reverse Current
BV − 1.0 to 100 mA
450
400
350
300
250
30
Reverse Voltage, VR [V]
Reverse Current, I R [uA]
650
600
550
500
450
1
2
3
5
10
20
30
50
0.1
100
0.2
Forward Current, I F [uA]
0.3
0.5
1
2
3
5
10
Forward Current, I F [mA]
Figure 3. Forward Voltage vs. Forward Current
VF − 1 to 100 mA
Figure 4. Forward Voltage vs. Forward Current
VF − 0.1 to 10 mA
900
1.6
o
Ta= 25 C
Forward Voltage, V F [mV]
Forward Voltage, VF [mV]
800
1.4
1.2
1.0
0.8
Typical
o
Ta= −40 C
700
o
Ta= 25 C
600
500
o
Ta= +65 C
400
300
0.6
10
20
30
50
100
200
300
500
800
0.01
Forward Current, I F [mA]
0.03
0.1
0.3
1
3
10
Forward Current, I F [mA]
Figure 5. Forward Voltage vs. Forward Current
VF − 10 to 800 mA
Figure 6. Forward Voltage vs. Ambient Temperature
VF - 0.01 - 20 mA (- 40 to +65°C)
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3
1N91x, 1N4x48, FDLL914, FDLL4x48
TYPICAL PERFORMANCE CHARACTERISTICS
4.0
0.90
o
o
Reverse Recovery Time, t rr [ns]
Total Capacitance (pF)
TA = 25 C
0.85
0.80
2
4
6
8
10
12
3.0
2.5
2.0
1.5
1.0
10
0.75
0
Ta = 25 C
3.5
14
20
30
40
50
60
Reverse Recovery Current, I rr [mA]
REVERSE VOLTAGE (V)
IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms
Figure 8. Reverse Recovery Time vs.
Reverse Recovery Current
Figure 7. Total Capacitance
500
Power Dissipation, PD [mW]
500
Current (mA)
400
300
I F(AV) − Average Rectified Current − mA
200
100
400
DO−35 and LL−34 / SOD−80
300
200
100
0
0
0
50
100
150
0
50
100
150
o
Ambient Temperature ( oC)
Temperature ( C)
Figure 9. Average Rectified Current (IF(AV))
vs. Ambient Temperature (TA)
Figure 10. Power Derating Curve
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4
200
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 017AG
ISSUE O
DATE 31 AUG 2016
T50 = 25.40 MIN (2X)
T26 = 14.00 MIN (2X)
4.56
3.05
0.533
0.460
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC DO−204, VARIATION AH.
B) HERMETICALLY SEALED GLASS PACKAGE.
C) PACKAGE WEIGHT IS 0.137 GRAM.
D) ALL DIMENSIONS ARE IN MILLIMETERS.
1.91
1.53
DOCUMENT NUMBER:
DESCRIPTION:
98AON13443G
AXIAL LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
MiniMELF / SOD−80
CASE 100AD
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON79582E
MINIMELF / SOD−80
DATE 30 APR 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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