1PMT22AT3

1PMT5.0AT1/T3 Series Zener Transient Voltage Suppressor POWERMITE® Package The 1PMT5.0AT1/T3 Series is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low Zener impedance and fast response time. The advanced packaging technique provides for a highly efficient micro miniature, space saving surface mount with its unique heatsink design. The POWERMITE has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles (1.1 mm) in the industry. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines, power supplies and many other industrial/consumer applications. Specification Features: http://onsemi.com PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSOR 5 − 58 V 200 W PEAK POWER 1 1: CATHODE 2: ANODE 2 • Stand−off Voltage: 5.0 V − 58 V • Peak Power − 200 W @ 1 ms (1PMT5.0A − 1PMT36A) • • • • • • • • • • • • − 175 W @ 1 ms (1PMT40A − 1PMT58A) Maximum Clamp Voltage @ Peak Pulse Current Low Leakage Response Time is Typically < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model Low Profile − Maximum Height of 1.1 mm Integral Heatsink/Locking Tabs Full Metallic Bottom Eliminates Flux Entrapment Small Footprint − Footprint Area of 8.45 mm2 POWERMITE is JEDEC Registered as DO−216AA Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes Cathode Indicated by Polarity Band Pb−Free Packages are Available 1 2 POWERMITE CASE 457 PLASTIC MARKING DIAGRAM 1 CATHODE M MxxG 2 ANODE Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are M Mxx G = Date Code = Specific Device Code (See Table on Page 3) = Pb−Free Package readily solderable MOUNTING POSITION: Any MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: Device ORDERING INFORMATION Package POWERMITE POWERMITE (Pb−Free) Shipping † 3,000/Tape & Reel 3,000/Tape & Reel 260°C for 10 Seconds 1PMTxxAT1 1PMTxxAT1G 1PMTxxAT3 1PMTxxAT3G POWERMITE 12,000/Tape & Reel POWERMITE 12,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 July, 2005 − Rev. 9 Publication Order Number: 1PMT5.0AT3/D 1PMT5.0AT1/T3 Series MAXIMUM RATINGS Rating Maximum Ppk Dissipation, (PW−10/1000 ms) (Note 1) (1PMT5.0A − 1PMT36A) Maximum Ppk Dissipation, (PW−10/1000 ms) (Note 1) (1PMT40A − 1PMT58A) Maximum Ppk Dissipation, (PW−8/20 ms) (Note 1) DC Power Dissipation @ TA = 25°C (Note 2) Derate above 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead (Anode) Maximum DC Power Dissipation (Note 3) Thermal Resistance, Junction−to−Tab (Cathode) Operating and Storage Temperature Range Symbol Ppk Ppk Ppk °PD° RqJA RqJanode °PD° RqJcathode TJ, Tstg Value 200 175 1000 500 4.0 248 35 3.2 23 −55 to +150 Unit W W W °mW mW/°C °C/W °C/W W °C/W °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse at TA = 25°C. 2. Mounted with recommended minimum pad size, DC board FR−4. 3. At Tab (Cathode) temperature, Ttab = 75°C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 4) = 35 A) Symbol IPP VC VRWM IR VBR IT IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF VC VBR VRWM I IF IR VF IT V IPP Uni−Directional TVS http://onsemi.com 2 1PMT5.0AT1/T3 Series ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA) VRWM Device* 1PMT5.0AT1, T3, G 1PMT7.0AT1, T3, G 1PMT12AT1, T3, G 1PMT16AT1, T3, G 1PMT18AT1, T3 1PMT22AT1, T3 1PMT24AT1, T3 1PMT26AT1, T3 1PMT28AT1, T3, G 1PMT30AT1, T3, G 1PMT33AT1, T3, G 1PMT36AT1, T3 1PMT40AT1, T3 1PMT48AT1, T3 1PMT51AT1, T3 1PMT58AT1, T3 Marking MKE MKM MLE MLP MLT MLX MLZ MME MMG MMK MMM MMP MMR MMX MMZ MNG (Note 5) 5.0 7.0 12 16 18 22 24 26 28 30 33 36 40 48 51 58 VBR @ IT (V) (Note 6) Min 6.4 7.78 13.3 17.8 20.0 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 53.3 56.7 64.4 Nom 6.7 8.2 14.0 18.75 21.0 25.6 28.1 30.4 32.8 35.1 38.7 42.1 46.8 56.1 59.7 67.8 Max 7.0 8.6 14.7 19.7 22.1 26.9 29.5 31.9 34.4 36.8 40.6 44.2 49.1 58.9 62.7 71.2 IT (mA) 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 IR @ VRWM (mA) 50 30 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VC @ IPP (V) 9.2 12 19.9 26 29.2 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 77.4 82.4 93.6 IPP (A) (Note 7) 21.7 16.7 10.1 7.7 6.8 5.6 5.1 4.8 4.4 4.1 3.8 3.4 2.7 2.3 2.1 1.9 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. 5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 6. VBR measured at pulse test current IT at ambient temperature of 25°C. 7. Surge current waveform per Figure 2 and derate per Figure 4. *The “G’’ suffix indicates Pb−Free package available. http://onsemi.com 3 1PMT5.0AT1/T3 Series TYPICAL PROTECTION CIRCUIT Zin Vin LOAD VL 10,000 tr PP, PEAK POWER (WATTS) 1000 100 VALUE (%) PEAK VALUE − IRSM PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IRSM. tr ≤ 10 ms 100 50 tP I HALF VALUE − RSM 2 10 1.0 10 100 tP, PULSE WIDTH (ms) 1000 10,000 0 0 1 2 t, TIME (ms) 3 4 Figure 1. Pulse Rating Curve Figure 2. 10 X 1000 ms Pulse Waveform 100 90 % OF PEAK PULSE CURRENT 80 70 60 50 40 30 20 10 0 0 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ T = 25° C A tr PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms HALF VALUE IRSM/2 @ 20 ms 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 tP 20 40 t, TIME (ms) 60 80 TA, AMBIENT TEMPERATURE (°C) Figure 3. 8 X 20 ms Pulse Waveform Figure 4. Pulse Derating Curve http://onsemi.com 4 1PMT5.0AT1/T3 Series P D , MAXIMUM POWER DISSIPATION (W) 1 0.7 0.5 DERATING FACTOR 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 ms 0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 100 ms PULSE WIDTH 10 ms 3.5 3 2.5 2 TL 1.5 1 0.5 0 25 50 75 100 125 150 175 T, TEMPERATURE (°C) 1 ms D, DUTY CYCLE (%) Figure 5. Typical Derating Factor for Duty Cycle Figure 6. Steady State Power Derating V F, TYPICAL FORWARD VOLTAGE (VOLTS) 1.2 1.0 0.8 0.6 0.4 0.2 0 −55 25 85 150 T, TEMPERATURE (°C) 10,000 C, CAPACITANCE (pF) 1000 MEASURED @ ZERO BIAS 100 MEASURED @ 50% VRWM 10 1 10 WORKING PEAK REVERSE VOLTAGE (VOLTS) 100 Figure 7. Forward Voltage Figure 8. Capacitance versus Working Peak Reverse Voltage http://onsemi.com 5 1PMT5.0AT1/T3 Series OUTLINE DIMENSIONS POWERMITE CASE 457−04 ISSUE D −A− C J S F 0.08 (0.003) M TB S C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. DIM A B C D F H J K L R S MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 −0.05 +0.10 −0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF TERM. 1 −B− K TERM. 2 R L J H −T− 0.08 (0.003) M D TB S C S SOLDERING FOOTPRINT* 0.635 0.025 2.67 0.105 0.762 0.030 2.54 0.100 1.27 0.050 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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