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1SMB75CAT3

1SMB75CAT3

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    DO214AA

  • 描述:

    TVS DIODE 75VWM 121VC SMB

  • 数据手册
  • 价格&库存
1SMB75CAT3 数据手册
1SMB10CAT3 Series 600 Watt Peak Power Zener Transient Voltage Suppressors Bidirectional* The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: • • • • • • • • http://onsemi.com PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 10–78 VOLTS 600 WATT PEAK POWER Working Peak Reverse Voltage Range – 10 V to 78 V Standard Zener Breakdown Voltage Range – 11.7 V to 91.3 V Peak Power – 600 Watts @ 1 ms ESD Rating of Class 3 (> 16 KV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 µA Above 10 V UL 497B for Isolated Loop Circuit Protection Response Time is Typically < 1 ns SMB CASE 403A PLASTIC Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MARKING DIAGRAM MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds LEADS: Modified L–Bend providing more contact area to bond pads POLARITY: Polarity band will not be indicated MOUNTING POSITION: Any MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1.) @ TL = 25°C, Pulse Width = 1 ms PPK 600 W DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2.) Derate Above 75°C Thermal Resistance from Junction to Lead PD 3.0 W RJL 40 25 mW/°C °C/W PD 0.55 W RJA 4.4 226 mW/°C °C/W –65 to +150 °C DC Power Dissipation (Note 3.) @ TA = 25°C Derate Above 25°C Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range TJ, Tstg YWW xxC Y WW xxC = Year = Work Week = Specific Device Code = (See Table Next Page) ORDERING INFORMATION Device  1SMBxxCAT3 Package Shipping SMB 2500/Tape & Reel Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. †The “T3” suffix refers to a 13 inch reel. 1. 10 X 1000 s, non–repetitive 2. 1″ square copper pad, FR–4 board 3. FR–4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec. *Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices.  Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 4 1 Publication Order Number: 1SMB10CAT3/D 1SMB10CAT3 Series ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) Symbol IPP Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT IT VC VBR VRWM IR IR VRWM VBR VC IT Working Peak Reverse Voltage V Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IPP Test Current Bi–Directional TVS ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.) Device Device Marking Breakdown Voltage VC @ IPP (Note 6.) VRWM (Note 4.) IR @ VRWM @ IT VC IPP Volts µA Min Nom Max mA Volts Amps VBR (Note 5.) Volts 1SMB10CAT3 1SMB11CAT3 1SMB12CAT3 1SMB13CAT3 KXC KZC LEC LGC 10 11 12 13 5.0 5.0 5.0 5.0 11.1 12.2 13.3 14.4 11.69 12.84 14.00 15.16 12.27 13.5 14.7 15.9 1.0 1.0 1.0 1.0 17.0 18.2 19.9 21.5 35.3 33.0 30.2 27.9 1SMB14CAT3 1SMB15CAT3 1SMB16CAT3 1SMB17CAT3 LKC LMC LPC LRC 14 15 16 17 5.0 5.0 5.0 5.0 15.6 16.7 17.8 18.9 16.42 17.58 18.74 19.90 17.2 18.5 19.7 20.9 1.0 1.0 1.0 1.0 23.2 24.4 26.0 27.6 25.8 24.0 23.1 21.7 1SMB18CAT3 1SMB20CAT3 1SMB22CAT3 1SMB24CAT3 LTC LVC LXC LZC 18 20 22 24 5.0 5.0 5.0 5.0 20.0 22.2 24.4 26.7 21.06 23.37 25.69 28.11 22.1 24.5 27.0 29.5 1.0 1.0 1.0 1.0 29.2 32.4 35.5 38.9 20.5 18.5 16.9 15.4 1SMB26CAT3 1SMB28CAT3 1SMB30CAT3 1SMB33CAT3 MEC MGC MKC MMC 26 28 30 33 5.0 5.0 5.0 5.0 28.9 31.1 33.3 36.7 30.42 32.74 35.06 38.63 31.9 34.4 36.8 40.6 1.0 1.0 1.0 1.0 42.1 45.4 48.4 53.3 14.2 13.2 12.4 11.3 1SMB36CAT3 1SMB40CAT3 1SMB43CAT3 1SMB45CAT3 MPC MRC MTC MVC 36 40 43 45 5.0 5.0 5.0 5.0 40.0 44.4 47.8 50.0 42.11 46.74 50.32 52.63 44.2 49.1 52.8 55.3 1.0 1.0 1.0 1.0 58.1 64.5 69.4 72.2 10.3 9.3 8.6 8.3 1SMB48CAT3 1SMB51CAT3 1SMB54CAT3 1SMB58CAT3 MXC MZC NEC NGC 48 51 54 58 5.0 5.0 5.0 5.0 53.3 56.7 60.0 64.4 56.11 59.69 63.16 67.79 58.9 62.7 66.32 71.18 1.0 1.0 1.0 1.0 77.4 82.4 87.1 93.6 7.7 7.3 6.9 6.4 1SMB60CAT3 1SMB64CAT3 1SMB70CAT3 1SMB75CAT3 NKC NMC NPC NRC 60 64 70 75 5.0 5.0 5.0 5.0 66.7 71.1 77.8 83.3 70.21 74.84 81.90 91.65 73.72 78.58 85.99 92.07 1.0 1.0 1.0 1.0 96.8 103 113 121 6.2 5.8 5.3 4.9 1SMB78CAT3 NTC 78 5.0 86.7 91.26 95.83 1.0 126 4.7 4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 5. VBR measured at pulse test current IT at an ambient temperature of 25°C. 6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data – 600 Watt at the beginning of this group. http://onsemi.com 2 1SMB10CAT3 Series NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 2 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. tr≤ 10 µs 100 10 PEAK VALUE - IPP VALUE (%) PPK, PEAK POWER (kW) 100 HALF VALUE 50 1 IPP 2 tP 0.1 0.1 µs 1 µs 10 µs 100 µs 1 ms 10 ms 0 0 1 3 4 tP, PULSE WIDTH t, TIME (ms) Figure 1. Pulse Rating Curve Figure 2. Pulse Waveform 160 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25° C 2 TYPICAL PROTECTION CIRCUIT 140 Zin 120 100 80 Vin 60 40 20 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 3. Pulse Derating Curve http://onsemi.com 3 LOAD VL 1SMB10CAT3 Series APPLICATION NOTES RESPONSE TIME minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 4. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 5. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMB series have a very good response time, typically < 1 ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, DUTY CYCLE DERATING The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 6. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 6 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 µs pulse. However, when the derating factor for a given pulse of Figure 6 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend. http://onsemi.com 4 1SMB10CAT3 Series V V Vin (TRANSIENT) OVERSHOOT DUE TO INDUCTIVE EFFECTS Vin (TRANSIENT) VL VL Vin td tD = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure 4. Figure 5. 1 0.7 DERATING FACTOR 0.5 0.3 0.2 PULSE WIDTH 10 ms 0.1 0.07 0.05 1 ms 0.03 100 µs 0.02 10 µs 0.01 0.1 0.2 0.5 1 2 5 10 D, DUTY CYCLE (%) 20 50 100 Figure 6. Typical Derating Factor for Duty Cycle UL RECOGNITION including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category. The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #116110. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests http://onsemi.com 5 1SMB10CAT3 Series OUTLINE DIMENSIONS Transient Voltage Suppressors – Surface Mounted 600 Watt Peak Power SMB DO–214AA CASE 403A–03 ISSUE D S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. D B INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 C K P H J 0.089 2.261 0.108 2.743 inches mm 0.085 2.159 SMB Footprint http://onsemi.com 6 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 1SMB10CAT3 Series Notes http://onsemi.com 7 1SMB10CAT3 Series Surmetic is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–german@hibbertco.com French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–french@hibbertco.com English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–spanish@hibbertco.com Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 8 1SMB10CAT3/D
1SMB75CAT3 价格&库存

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