2N2907A

2N2907A

  • 厂商:

    ONSEMI(安森美)

  • 封装:

  • 描述:

    2N2907A - Switching Transistor - ON Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
2N2907A 数据手册
2N2907A Switching Transistor PNP Silicon Epitaxial Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military Temperature Range Screening MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PT PT TJ, Tstg Value −60 −60 −5.0 −600 625 5.0 1.5 12 −65 to +200 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 325 150 Unit °C/W °C/W TO−18 CASE 206AA STYLE 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device JAN2N2907A JANTX2N2907A JANTXV2N2907A TO−18 Bulk Package Shipping © Semiconductor Components Industries, LLC, 2011 July, 2011 − Rev. 0 1 Publication Order Number: 2N2907A/D 2N2907A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = −10 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = −10 mAdc, IC = 0) Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) Collector Cutoff Current (VCB = −50 Vdc, IE = 0) (VCB = −50 Vdc, IE = 0, TA = 150°C) Base Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ON CHARACTERISTICS DC Current Gain (IC = −0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (Note 1) (IC = −500 mAdc, VCE = −10 Vdc) (Note 1) Collector − Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) Base − Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (Notes 1 and 2), (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) |hfe|, (IC = −20 mAdc, VCE = −20 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz) Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Turn−On Time Delay Time Rise Time Turn−Off Time Storage Time Fall Time 1. Pulse Test: See section 4 of MIL−STD−750. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. (VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = 15 mAdc) (Figure NO TAG) (VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) (Figures NO TAG and NO TAG) ton td tr toff ts tf − − − − − − 45 10 40 100 80 30 ns ns ns ns ns ns Cobo Cibo fT 200 2.0 − − − − 8.0 30 MHz − pF pF hFE 75 100 100 100 50 − − −0.6 − − − − 300 − −0.4 −1.6 −1.3 −2.6 − V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO −60 −60 −5.0 − − − − − − − −50 −0.01 −10 −50 Vdc Vdc Vdc nAdc mAdc Symbol Min Max Unit IB nAdc VCE(sat) Vdc VBE(sat) Vdc http://onsemi.com 2 2N2907A PACKAGE DIMENSIONS TO−18 3 CASE 206AA−01 ISSUE O B DETAIL X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­ SIONS A, B, AND T. DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 5.31 5.84 4.52 4.95 4.32 5.33 0.41 0.53 --0.76 0.41 0.48 0.91 1.17 0.71 1.22 12.70 19.05 6.35 --45_BSC 2.54 BSC --1.27 1.37 BSC --0.76 2.54 --INCHES MIN MAX 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 --0.030 0.016 0.019 0.036 0.046 0.028 0.048 0.500 0.750 0.250 --45 _BSC 0.100 BSC --0.050 0.054 BSC --0.030 0.100 --- A B P L C A K E NOTE 7 SEATING PLANE U U R NOTE 5 F T D NOTES 4 & 6 0.007 (0.18MM) A B S C 3X DETAIL X M H M C J N 2 1 3 LEAD IDENTIFICATION DETAIL STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 3 2N2907A/D
2N2907A
### 物料型号 - 型号:2N2907A - 封装:TO-18

### 器件简介 2N2907A是一款PNP型硅外延开关晶体管,符合MIL-PRF-19500/291标准,提供JAN、JANTX和JANTXV军用密封商业产品,并可选军事温度范围筛选。

### 引脚分配 - 引脚1:发射极(Emitter) - 引脚2:基极(Base) - 引脚3:集电极(Collector)

### 参数特性 - 集电极-发射极电压(VCEO):-60Vdc - 集电极-基极电压(VCBO):-60Vdc - 发射极-基极电压(VEBO):-5.0Vdc - 集电极电流(Ic):-600mAdc - 总器件耗散(PT)@ TA = 25°C:625mW/°C - 总器件耗散(PT)@ Tc = 25°C:1.5W/mW/°C - 工作和存储结温范围(TJ,Tstg):-65至+200°C

### 功能详解 2N2907A具有以下电气特性: - 关断特性:包括集电极-发射极击穿电压、集电极-基极击穿电压和发射极-基极击穿电压。 - 开启特性:包括直流电流增益(hFE)和集电极-发射极饱和电压(VCE(sat))。 - 小信号特性:包括电流增益-带宽积(fT)、输出电容(Cobo)和输入电容(Cibo)。 - 开关特性:包括开通时间和关断时间等。

### 应用信息 2N2907A适用于需要PNP型硅外延开关晶体管的场合,具体应用需根据其电气特性和工作环境进行选择。

### 封装信息 - 封装类型:TO-18 - 封装风格:1 - 订购信息:JAN2N2907A、JANTX2N2907A、JANTXV2N2907A
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