2N3663

2N3663 E TO-92 CB NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 12 VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient © 1997 Fairchild Semiconductor Corporation Max Units 2N3663 350 2.8 125 mW mW/°C °C/W 357 °C/W 2N3663 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, IB = 0 12 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, IE = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 100 µA, I C = 0 3.0 ICBO Collector-Cutoff Current VCB = 15 V, IE = 0 0.5 µA IEBO Emitter-Cutoff Current VEB = 2.0 V, I C = 0 0.5 µA MHz V ON CHARACTERISTICS* hFE DC Current Gain VCE = 10 V, IC = 8.0 mA 20 IC = 5.0 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 700 2100 0.8 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cob Output Capacitance rb’CC Collector Base Time Constant 1.7 pF IC = 8.0 mA, VCE = 10 V, f = 79.8 MHz 80 pS IC = 1.0 mA, VCE = 6.0 V, f = 60 MHz, Rg = 400 Ω IC = 6.0 mA, VCE = 12 V, f = 200 MHz 6.5 dB FUNCTIONAL TEST NF Noise Figure Gpe Amplifier Power Gain *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 1.5 dB 2N3663 NPN RF Transistor