2N3904TA

NPN General - Purpose Amplifier 2N3904 Description This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. www.onsemi.com MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) (Note 1, Note 2) Parameter Symbol Value Unit VCEO Collector −Emitter Voltage 40 V VCBO Collector −Base Voltage 60 V VEBO Emitter −Base Voltage 6.0 V IC Collector Current − Continuous 200 mA TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits. ON Semiconductor should be consulted on applications involving pulsed orlow−duty cycle operations. THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Parameter Max Unit Total Device Dissipation 625 mW Derate Above 25°C 5.0 mW/°C RqJC Thermal Resistance, Junction to Case 83.3 °C/W RqJA Thermal Resistance, Junction to Ambient 200 °C/W Symbol PD 12 1 3 TO−92 3 CASE 135AN 2 3 TO−92 3 LEADFORMED CASE 135AR MARKING DIAGRAM A/2N 3904 YWW 1 A 2N3904 YWW 2 3 1: Emitter 2: Base 3: Collector = Assembly Code = Device Code = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2002 July, 2021 − Rev. 2 1 Publication Order Number: 2N3904/D 2N3904 ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Symbol Parametr Conditions Min Max Unit OFF CHARACTERISTICS V(BR)CEO Collector −Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 − V V(BR)CBO Collector −Base Breakdown Voltage IC = 10 mA, IE = 0 60 − V V(BR)EBO Emitter −Base Breakdown Voltage IE = 10 mA, IC = 0 6.0 − V Base Cutoff Current VCE = 30 V, VEB = 3 V − 50 nA Collector Cut−Off Current VCE = 30 V, VEB = 3 V − 50 nA IC = 0.1 mA, VCE = 1.0 V 40 − − IBL ICEX ON CHARACTERISTICS (Note 3) hFE VCE(sat) VBE(sat) DC Current Gain Collector −Emitter Saturation Voltage Base −Emitter Saturation Voltage IC = 1.0 mA, VCE = 1.0 V 70 − IC = 10 mA, VCE = 1.0 V 100 300 IC = 50 mA, VCE = 1.0 V 60 − IC = 100 mA, VCE = 1.0 V 30 − IC = 10 mA, IB = 1.0 mA − 0.2 IC = 50.0 mA, IB = 5.0 mA − 0.3 IC = 10.0 mA, IB = 1.0 mA 0.65 0.85 IC = 50.0 mA, IB = 5.0 mA − 0.95 300 − MHz V V SMALL− SIGNAL CHARACTERISTICS fT Current −Gain − Bandwidth Product IC = 10 mA, VCE = 20 V, f = 100 MHz Cobo Output Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz − 4.0 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz − 8.0 pF NF Noise Figure IC = 100 mA, VCE = 5.0 V, RS = 1.0 kW, f = 10 Hz to 15.7 kHz − 5.0 dB VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA − 35 ns − 35 ns VCC = 3.0 V, IC = 10 mA, IB1 = IB2 = 1.0 mA − 200 ns − 50 ns SWITCHING CHARACTERISTICS td Delay Time tr Rise Time ts Storage Time tf Fall Time Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%. www.onsemi.com 2 2N3904 hFE, Typical Pulsed Current Gain 500 VCE(sat), Collector−Emitter Voltage (V) TYPICAL PERFORMANCE CHARACTERISTICS VCE = 5 V 400 300 25°C 200 −40°C 100 0 1 25°C 0.05 −40°C 0.1 1 10 Figure 1. Typical Pulsed Current Gain vs. Collector Current Figure 2. Collector−Emitter Saturation Voltage vs. Collector Current 25°C 0.6 125°C 0.4 0.1 1 10 1 VCE = 5 V −40°C 0.8 25°C 0.6 125°C 0.4 0.2 100 0.1 1 10 100 IC, Collector Current (mA) IC, Collector Current (mA) Figure 4. Base−Emitter On Voltage vs. Collector Current Figure 3. Base−Emitter Saturation Voltage vs. Collector Current 10 500 f = 1.0 MHz VCB = 30 V 100 Capacitance (pF) ICBO, Collector Current (nA) 100 IC, Collector Current (mA) −40°C 0.8 125°C 0.1 100 10 b = 10 1 0.15 IC, Collector Current (mA) VBE(ON), Base−Emitter On Voltage (V) VBE(sat), Base−Emitter Voltage (V) 0.1 b = 10 10 1 5 4 Cibo 3 2 0.1 Cobo 25 50 75 100 125 1 150 0.1 1 10 TA, Ambient Temperature (5C) Reverse Bias Voltage (V) Figure 5. Collector Cut−Off Current vs. Ambient Temperature Figure 6. Capacitance vs. Reverse Bias Voltage www.onsemi.com 3 100 2N3904 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 12 IC = 1.0 mA RS = 200 W IC = 50 mA RS = 1.0 kW 8 IC = 0.5 mA RS = 200 W 6 4 IC = 100 mA RS = 500 W 2 8 6 IC = 100 mA 4 0 0.1 1 100 10 0.1 Figure 8. Noise Figure vs. Source Resistance 1 40 35 60 q 30 PD, Power Dissipation (W) 20 40 80 25 100 20 120 140 VCE = 40 V IC = 10 mA 10 100 Figure 7. Noise Figure vs. Frequency 0 15 10 RS, Source Resistance (kW) hfe 45 1 f, Frequency (kHz) 50 160 5 0.75 TO−92 0.5 0.25 180 0 0 1 10 100 1000 0 VCC = 40 V tr, Rise Time (ns) 10 15 V Time (ns) 100 75 500 I IB1 = IB2 = C 40 V 50 100 125 150 Figure 10. Power Dissipation vs. Ambient Temperature Figure 9. Current Gain and Phase Angle vs. Frequency 500 25 Temperature (5C) f, Frequency (MHz) tr @ VCC = 3.0 V 2.0 V 10 5 IC = 50 mA IC = 5.0 mA 2 0 hfe, Current Gain (dB) IC = 1.0 mA 10 NF, Noise Figure (dB) NF, Noise Figure (dB) 10 12 VCE = 5 V 100 I IB1 = IB2 = C 10 TJ = 25°C TJ = 125°C 10 td @ VCB = 0 V 1 10 5 100 IC, Collector Current (mA) 1 10 IC, Collector Current (mA) Figure 11. Turn−On Time vs. Collector Current Figure 12. Rise Time vs. Collector Current www.onsemi.com 4 100 2N3904 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 500 500 I IB1 = IB2 = C VCC = 40 V TJ = 25°C 100 TJ = 125°C 10 5 TJ = 25°C 10 1 10 5 100 1 10 500 100 IC, Collector Current (mA) Figure 13. Storage Time vs. Collector Current Figure 14. Fall Time vs. Collector Current 100 VCE = 10 V f = 1.0 kHz TA = 25°C hoe, Output Admittance (mmhos) hfe, Current Gain 10 100 IC, Collector Current (mA) 100 10 VCE = 10 V f = 1.0 kHz TA = 25°C 10 1 0.1 1 10 0.1 10 IC, Collector Current (mA) Figure 15. Current Gain Figure 16. Output Admittance hre, Voltage Feedback Ratio (y 10−4) VCE = 10 V f = 1.0 kHz TA = 25°C 10 1 0.1 0.1 1 IC, Collector Current (mA) 100 hie, Input Impedance (kW) I IB1 = IB2 = C TJ = 125°C tf, Fall Time (ns) tS, Storage Time (ns) 10 1 10 VCE = 10 V f = 1.0 kHz TA = 25°C 7 5 4 3 2 1 0.1 10 1 IC, Collector Current (mA) IC, Collector Current (mA) Figure 17. Input Impedance Figure 18. Voltage Feedback Ratio www.onsemi.com 5 10 2N3904 TEST CIRCUITS +3 V 300 ns 10.6 V Duty Cycle = 2% 275 W 10 kW 0 -0.5 V C1 < 4.0 pF < 1.0 ns Figure 19. Delay and Rise Time Equivalent Test Circuit 10 < t1 < 500 ms 3V t1 10.9 V 275 W Duty Cycle = 2% 10 kW 0 1N916 C1 < 4.0 pF -9.1 V < 1.0 ns Figure 20. Storage and Fall Time Equivalent Test Circuit ORDERING INFORMATION Package Shipping† 2N3904BU TO−92−3 LF (Pb−Free) 10000 Units / Bulk Bag 2N3904TA TO−92−3 LF (Pb−Free) 2000 Units / Fan−Fold 2N3904TAR TO−92−3 LF (Pb−Free) 2000 Units / Fan−Fold 2N3904TF TO−92−3 LF (Pb−Free) 2000 Units / Tape & Reel 2N3904TFR TO−92−3 LF (Pb−Free) 2000 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.825x4.76 CASE 135AN ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13880G TO−92 3 4.825X4.76 DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13879G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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