2N3905

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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N3905 2N3905 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 40 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient  2001 Fairchild Semiconductor Corporation Max Units 2N3905 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N3905, Rev A (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, I E = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, IC = 0 5.0 ICEX Collector Cutoff Current VCE = 30 V, VOB = 3.0 V 50 nA IBL Base Cutoff Current VCE = 30 V, VOB = 3.0 V 50 nA V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage VCE = 1.0 V, IC = 0.1 mA VCE = 1.0 V, IC = 1.0 mA VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 50 mA VCE = 1.0 V, IC = 100 mA I C = 10 mA, I B = 1.0 mA I C = 50 mA, I B = 5.0 mA I C = 10 mA, I B = 1.0 mA I C = 50 mA, I B = 5.0 mA 30 40 50 30 15 0.65 150 0.25 0.40 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 5.0 V, f = 1.0 MHz 4.5 pF Cib Input Capacitance VEB = 0.5 V, f = 1.0 MHz 10 pF hfe Small-Signal Current Gain 2.0 hfe Small-Signal Current Gain I C = 10 mA, VCE = 20 V, f = 100 MHz I C = 1.0 mA, VCE =10 V, 50 200 hre Voltage Feedback Ratio f = 1.0 KHz 0.1 5.0 hie Input Impedance 0.5 8.0 kΩ hoe NF Output Impedance 1.0 40 µmhos VCE = 5.0 V, IC = 100 µA, RS = 1.0 kΩ, BW = 10 Hz to 15.7 KHz 5.0 dB ns Noise Figure x10 -4 SWITCHING CHARACTERISTICS td Delay Time VCC = 3.0 V, ICS = 10 mA, 35 tr Rise Time 35 ns ts Storage Time I B1 = 1.0 mA ,VOB ( off ) = 3.0 V VCC = 3.0 V, ICS = 10 mA, 200 ns tf Fall Time I B1 = IB2 = 1.0 mA 60 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 2N3905 PNP General Purpose Amplifier (continued) 250 V CE = 1 .0V 125 °C 200 150 25 °C 100 50 0.1 - 40 °C 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA) 50 100 Base-Emitter Saturation Voltage vs Collector Current β = 10 1 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 0.2 0 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 V CESAT - COLLECTOR EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBE( ON)- BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) h F E - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.3 β = 10 0.25 0.2 0.15 25 °C 0.1 125°C 0.05 0 - 40 °C 1 1 0.8 - 40 °C 125 °C 0.4 = 25V 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 10 C obo CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) V CE = 1V 0.2 Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 10 1 0.1 0.01 25 25 °C 0.6 100 CB 200 Base Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature V 10 100 I C - COLLECTOR CURRENT (mA) 50 75 100 TA - AMBIE NT TEMP ERATURE (° C) 125 8 6 4 C ibo 2 0 0.1 1 REVERSE BIAS VOLTAGE (V) 10 2N3905 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Noise Figure vs Frequency Noise Figure vs Source Resistance 6 12 NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) V CE = 5.0V 5 4 3 I C = 100 µA, R S = 200Ω 2 I C = 1.0 mA, R S = 200Ω 1 I C = 100 µA, R S = 2.0 kΩ 0 0.1 1 10 f - FREQUENCY (kHz) V CE = 5.0V f = 1.0 kHz 10 I C = 1.0 mA 8 6 4 I C = 100 µA 2 0 0.1 100 1 10 R S - SOURCE RESISTANCE ( kΩ ) Switching Times vs Collector Current Turn On and Turn Off Times vs Collector Current 500 500 ts tf 10 I B1 = I B2 = tr Ic t off 100 TIME (nS) 100 t on I B1 = Ic 10 t on VBE(OFF) = 0.5V 10 Ic t off I = I = B1 B2 10 10 td 1 1 10 I C - COLLECTOR CURRENT (mA) 1 100 1 I 10 - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) TIME (nS) 100 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 100 2N3905 PNP General Purpose Amplifier (continued) Typical Characteristics Input Impedance Voltage Feedback Ratio ) 10 100 h ie - INPUT IMPEDANCE (k Ω) _ 4 h re - VOLTAGE FEEDBACK RATIO (x10 (continued) 10 1 0.1 1 I C - COLLECTOR CURRENT (mA) 1 0.1 0.1 10 1 I C - COLLECTOR CURRENT (mA) 10 Current Gain 1000 V CE = 10 V f = 1.0 kHz 500 h fe - CURRENT GAIN h oe - OUTPUT ADMITTANCE ( µmhos) Output Admittance 1000 VCE = 10 V f = 1.0 kHz 100 V CE = 10 V f = 1.0 kHz 200 100 50 20 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 2N3905 PNP General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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