2N4123

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4123/D General Purpose Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N4123 2N4124 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N4123 2N4124 30 40 5.0 200 625 5.0 1.5 12 – 55 to +150 25 30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IE = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. V(BR)CEO 2N4123 2N4124 V(BR)CBO 2N4123 2N4124 V(BR)EBO ICBO IEBO 40 30 5.0 — — — — — 50 50 Vdc nAdc nAdc 30 25 — — Vdc Vdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 2N4123 2N4124 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain(1) (IC = 2.0 mAdc, VCE = 1.0 Vdc) hFE 2N4123 2N4124 2N4123 2N4124 VCE(sat) VBE(sat) 50 120 25 60 — — 150 360 — — 0.3 0.95 Vdc Vdc — (IC = 50 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Collector–Base Capacitance (IE = 0, VCB = 5.0 V, f = 1.0 MHz) Small–Signal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k ohm, f = 1.0 kHz) Current Gain — High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123 2N4124 |hfe| 2N4123 2N4124 2N4123 2N4124 NF 2N4123 2N4124 — — 6.0 5.0 2.5 3.0 50 120 — — 200 480 dB fT 2N4123 2N4124 Cibo Ccb hfe 50 120 200 480 — 250 300 — — — — 8.0 4.0 pF pF — MHz (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) Noise Figure (IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 k ohm, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 10 7.0 CAPACITANCE (pF) 5.0 Cibo TIME (ns) 200 100 70 50 30 20 tf tr td ts 3.0 2.0 Cobo 10.0 7.0 VCC = 3 V IC/IB = 10 VEB(off) = 0.5 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) 20 30 40 5.0 Figure 1. Capacitance Figure 2. Switching Times 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N4123 2N4124 AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE (VCE = 5 Vdc, TA = 25°C) Bandwidth = 1.0 Hz 12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 200 W IC = 1 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1 kΩ IC = 50 mA NF, NOISE FIGURE (dB) 14 f = 1 kHz 12 10 8 6 4 2 0 0.1 IC = 1 mA IC = 0.5 mA IC = 50 mA IC = 100 mA SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1 2 4 10 f, FREQUENCY (kHz) 20 40 100 0.2 0.4 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (kΩ) 40 100 Figure 3. Frequency Variations Figure 4. Source Resistance h PARAMETERS (VCE = 10 V, f = 1 kHz, TA = 25°C) 300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50 20 10 5 hfe , CURRENT GAIN 200 100 70 50 2 1 30 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 5. Current Gain 20 10 hie , INPUT IMPEDANCE (kΩ ) 5.0 2.0 1.0 0.5 10 h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 7.0 5.0 3.0 2.0 Figure 6. Output Admittance 1.0 0.7 0.5 0.1 0.2 1.0 2.0 0.5 IC, COLLECTOR CURRENT (mA) 5.0 10 0.2 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 7. Input Impedance Figure 8. Voltage Feedback Ratio Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 2N4123 2N4124 STATIC CHARACTERISTICS 2.0 h FE, DC CURRENT GAIN (NORMALIZED) TJ = +125°C 1.0 0.7 0.5 0.3 0.2 – 55°C +25°C VCE = 1 V 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 Figure 9. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1 mA 0.6 10 mA 30 mA 100 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 10. Collector Saturation Region TJ = 25°C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE = 1 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 VBE(sat) @ IC/IB = 10 θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.2 1.0 0.5 0 – 0.5 – 1.0 – 1.5 – 2.0 – 55°C to +25°C +25°C to +125°C +25°C to +125°C qVC for VCE(sat) – 55°C to +25°C qVB for VBE(sat) 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) 180 200 Figure 11. “On” Voltages Figure 12. Temperature Coefficients 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N4123 2N4124 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X–X DIM A B C D F G H J K L N P R V CASE 029–04 (TO–226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 2N4123 2N4124 Motorola reserves the right to make changes without further notice to any products herein. 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