2N4123, 2N4124 General Purpose Transistors
NPN Silicon
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COLLECTOR 3 Symbol 2N4123 2N4124 2N4123 2N4124 VCEO Value 30 25 40 30 5.0 200 625 5.0 1.5 12 − 55 to +150 Unit Vdc 2 BASE 1 EMITTER
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector − Emitter Voltage
Collector − Base Voltage
VCBO
Vdc
Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
VEBO IC PD PD TJ, Tstg
Vdc mAdc mW mW/°C W mW/°C °C TO−92 CASE 29 STYLE 1 12 1 2
3 STRAIGHT LEAD BULK PACK
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W 2N 412x AYWW G G
3 BENT LEAD TAPE & REEL AMMO PACK
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
x = 3 or 4 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device 2N4123RLRM 2N4124G Package TO−92 TO−92 (Pb−Free) Shipping† 2000 / Tape & Ammo 5000 Units / Bulk
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: 2N4123/D
November, 2008 − Rev. 4
1
2N4123, 2N4124
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IE = 0) Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 2.0 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector − Emitter Saturation Voltage (Note 1) (IC = 50 mAdc, IB = 5.0 mAdc) Base − Emitter Saturation Voltage (Note 1) (IC = 50 mAdc, IB = 5.0 mAdc) SMALL−SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Collector−Base Capacitance (IE = 0, VCB = 5.0 V, f = 1.0 MHz) Small−Signal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz) Current Gain − High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2N4123 2N4124 2N4123 2N4124 2N4123 2N4124 2N4123 2N4124 NF 2N4123 2N4124 fT 250 300 − − 50 120 2.5 3.0 50 120 − − − − 8.0 4.0 200 480 − − 200 480 6.0 5.0 dB MHz 2N4123 2N4124 2N4123 2N4124 VCE(sat) VBE(sat) hFE 50 120 25 60 − − 150 360 − − 0.3 0.95 Vdc Vdc − 2N4123 2N4124 2N4123 2N4124 V(BR)CEO 30 25 40 30 5.0 − − − − − − − 50 50 Vdc Symbol Min Max Unit
V(BR)CBO
Vdc
V(BR)EBO ICBO IEBO
Vdc nAdc nAdc
Cibo Ccb hfe
pF pF −
|hfe|
−
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2
2N4123, 2N4124
10 7.0 CAPACITANCE (pF) 5.0 Cibo 3.0 2.0 Cobo 10.0 7.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) 20 30 40 5.0 1.0 VCC = 3 V IC/IB = 10 VEB(off) = 0.5 V 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 TIME (ns) 200 100 70 50 30 20 tf tr td ts
Figure 1. Capacitance
Figure 2. Switching Times
AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE (VCE = 5 Vdc, TA = 25°C) Bandwidth = 1.0 Hz
12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1 2 4 10 f, FREQUENCY (kHz) 20 40 100 SOURCE RESISTANCE = 200 W IC = 1 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1 kW IC = 50 mA 14 f = 1 kHz 12 10 8 6 4 2 0 0.1 IC = 100 mA IC = 1 mA IC = 0.5 mA IC = 50 mA
0.2
0.4
1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (kW)
40
100
Figure 3. Frequency Variations
Figure 4. Source Resistance
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2N4123, 2N4124
h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25°C)
300 hoe , OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50 20 10 5
hfe , CURRENT GAIN
200
100 70 50
2 1
30 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)
5.0
10
Figure 5. Current Gain
20 10 hie , INPUT IMPEDANCE (kΩ ) 5.0 2.0 1.0 0.5 10 7.0 5.0 3.0 2.0
Figure 6. Output Admittance
h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10
1.0 0.7 0.5 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.2
Figure 7. Input Impedance
Figure 8. Voltage Feedback Ratio
STATIC CHARACTERISTICS
2.0 h FE , DC CURRENT GAIN (NORMALIZED) TJ = +125°C 1.0 0.7 0.5 0.3 0.2 - 55°C +25°C VCE = 1 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
Figure 9. DC Current Gain
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2N4123, 2N4124
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1 mA 0.6 10 mA 30 mA 100 mA
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.2 0.3 0.5 IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 10. Collector Saturation Region
TJ = 25°C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE = 1 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 100 200 VBE(sat) @ IC/IB = 10
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.2
1.0 0.5 qVC for VCE(sat) 0 - 0.5 - 1.0 - 1.5 - 2.0 qVB for VBE(sat) - 55°C to +25°C +25°C to +125°C - 55°C to +25°C +25°C to +125°C
0
20
40
60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA)
180 200
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
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2N4123, 2N4124
PACKAGE DIMENSIONS
TO−92 (TO−226) CASE 29−11 ISSUE AM
A R P L
SEATING PLANE
B
STRAIGHT LEAD BULK PACK
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---
K
XX H V
1
D G J C N N SECTION X−X
DIM A B C D G H J K L N P R V
R
A
B
BENT LEAD TAPE & REEL AMMO PACK
P T
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
K
G
XX V
1
D J C N SECTION X−X
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2N4123/D