2N4401RLRM

2N4401 Preferred Device General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg −55 to +150 W mW/°C °C mW mW/°C 1 2 3 Value 40 60 6.0 600 Unit Vdc Vdc Vdc mAdc 2 BASE 1 EMITTER MARKING DIAGRAM 2N 4401 YWW TO−92 CASE 29 STYLE 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Y WW = Year = Work Week THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W Preferred devices are recommended choices for future use and best overall value. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2004 1 June, 2004 − Rev. 1 Publication Order Number: 2N4401/D 2N4401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Base−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE = 2.0 Vdc, Vdc, Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, Vdc, mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf − − − − 15 20 225 30 ns ns ns ns fT Ccb Ceb hie hre hfe hoe 250 − − 1.0 0.1 40 1.0 − 6.5 30 15 8.0 500 30 MHz pF pF k ohms X 10−4 − mmhos hFE 20 40 80 100 40 VCE(sat) VBE(sat) − − 0.75 − − − − 300 − 0.4 0.75 0.95 1.2 Vdc Vdc − V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 60 6.0 − − − − − 0.1 0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Max Unit 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 2N4401 ORDERING INFORMATION Device 2N4401 2N4401RLRA 2N4401RLRAG 2N4401RLRM 2N4401RLRP 2N4401RLRPG 2N4401ZL1 Package TO−92 TO−92 TO−92 (Pb−Free) TO−92 TO−92 TO−92 (Pb−Free) TO−92 Shipping† 5,000 Units / Box 2,000 / Tape & Reel 2,000 / Tape & Reel 2,000 / Ammo Pack 2,000 / Ammo Pack 2,000 / Ammo Pack 2,000 / Ammo Pack †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +16 V 0 −2.0 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 1.0 kW < 2.0 ns 200 W +16 V 0 CS* < 10 pF −14 V < 20 ns 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 1.0 kW +30 V 200 W CS* < 10 pF −4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn−On Time Figure 2. Turn−Off Time TRANSIENT CHARACTERISTICS 25°C 30 20 CAPACITANCE (pF) Q, CHARGE (nC) Cobo 10 7.0 5.0 Ccb 3.0 2.0 0.1 100°C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 QA 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 QT VCC = 30 V IC/IB = 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 Figure 3. Capacitances Figure 4. Charge Data http://onsemi.com 3 2N4401 100 70 50 t, TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 IC/IB = 10 100 70 50 30 20 tf tr VCC = 30 V IC/IB = 10 10 7.0 5.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6. Rise and Fall Times 300 200 t s′, STORAGE TIME (ns) ts′ = ts − 1/8 tf IB1 = IB2 IC/IB = 10 to 20 t f , FALL TIME (ns) 100 70 50 30 20 IC/IB = 10 IC/IB = 20 VCC = 30 V IB1 = IB2 100 70 50 10 7.0 30 10 20 30 50 70 100 200 300 500 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 W IC = 500 mA, RS = 200 W IC = 100 mA, RS = 2.0 kW IC = 50 mA, RS = 4.0 kW RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 mA IC = 100 mA IC = 500 mA IC = 1.0 mA 6.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 4.0 2.0 0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k RS, SOURCE RESISTANCE (OHMS) 50 k 100 k Figure 9. Frequency Effects Figure 10. Source Resistance Effects http://onsemi.com 4 2N4401 h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the 2N4401 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 300 hie , INPUT IMPEDANCE (OHMS) 200 hfe , CURRENT GAIN 50 k 20 k 10 k 5.0 k 2N4401 UNIT 1 2N4401 UNIT 2 100 70 50 30 20 2N4401 UNIT 1 2N4401 UNIT 2 2.0 k 1.0 k 500 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain Figure 12. Input Impedance h re , VOLTAGE FEEDBACK RATIO (X 10−4 ) 10 hoe, OUTPUT ADMITTANCE (m mhos) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 50 2N4401 UNIT 1 2N4401 UNIT 2 20 10 5.0 2.0 1.0 2N4401 UNIT 1 2N4401 UNIT 2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance http://onsemi.com 5 2N4401 STATIC CHARACTERISTICS 3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125°C 1.0 0.7 0.5 0.3 0.2 0.1 −55 °C 25°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 Figure 15. DC Current Gain VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 0.8 TJ = 25°C 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 16. Collector Saturation Region 1.0 0.8 VOLTAGE (VOLTS) TJ = 25°C VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ °C) +0.5 0 −0.5 −1.0 −1.5 −2.0 −2.5 qVB for VBE 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500 qVC for VCE(sat) 0.6 VBE @ VCE = 10 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500 Figure 17. “On” Voltages Figure 18. Temperature Coefficients http://onsemi.com 6 2N4401 PACKAGE DIMENSIONS TO−92 TO−226AA CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N DIM A B C D G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 7 2N4401 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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