2N4918

2N4918 − 2N4920* Series Preferred Device Medium−Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construction, • Excellent Safe Operating Area • Gain Specified to IC = 1.0 A • Complement to NPN 2N4921, 2N4922, 2N4923 MAXIMUM RATINGS Rating Collector − Emitter Voltage 2N4918 2N4919 2N4920 Collector − Base Voltage 2N4918 2N4919 2N4920 Emitter − Base Voltage Collector Current − Continuous (Note 1) Base Current Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC (Note 2) IB PD TJ, Tstg VCBO 40 60 80 5.0 1.0 3.0 1.0 30 0.24 −65 to +150 Vdc Adc Adc W W/°C °C Symbol VCEO 40 60 80 Vdc Value Unit Vdc 3 PD = 30 W @ TC = 25_C 3.0 A, 40−80 V, 30 W GENERAL PURPOSE POWER TRANSISTORS TO−225 CASE 077 STYLE 1 21 MARKING DIAGRAM YWW 2N 49xx xx Y WW = 18, 19, 20 = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The 1.0 A max IC value is based upon JEDEC current gain requirements. The 3.0 A max value is based upon actual current−handling capability of the device (See Figure 5). 2. Indicates JEDEC Registered Data for 2N4918 Series. *Preferred devices are recommended choices for future use and best overall value. THERMAL CHARACTERISTICS (Note 3) Characteristic Thermal Resistance, Junction−to−Case Symbol qJC Max 4.16 Unit °C/W 3. Recommend use of thermal compound for lowest thermal resistance. **For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2004 1 July, 2004 − Rev. 11 Publication Order Number: 2N4918/D ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ ÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î Î ÎÎÎ Î Î Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î ÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 4. Pulse Test: PW [ 300 ms, Duty Cycle [ 2.0% SMALL−SIGNAL CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ORDERING INFORMATION 2N4920G 2N4920 2N4919 2N4918 Small−Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Current−Gain − Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) Base−Emitter On Voltage (Note 4) (IC = 1.0 Adc, VCE = 1.0 Vdc) Base−Emitter Saturation Voltage (Note 4) (IC = 1.0 Adc, IB = 0.1 Adc) Collector−Emitter Saturation Voltage (Note 4) (IC = 1.0 Adc, IB = 0.1 Adc) DC Current Gain (Note 4) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = Rated VCB, IE = 0) Collector Cutoff Current (VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125_C Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Collector−Emitter Sustaining Voltage (Note 4) (IC = 0.1 Adc, IB = 0) Device Characteristic 2N4918 − 2N4920* Series http://onsemi.com TO−225 (Pb−Free) Package TO−225 TO−225 TO−225 2N4918 2N4919 2N4920 2N4918 2N4919 2N4920 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) ICBO ICEO IEBO ICEX Cob hFE hfe fT 500 Unit / Bulk 500 Unit / Bulk 500 Unit / Bulk 500 Unit / Bulk Shipping† Min 3.0 25 40 30 10 40 60 80 − − − − − − − − − − − Max − 150 − 100 1.3 1.3 0.6 1.0 0.1 0.1 0.5 0.5 0.5 0.5 − − − − − mAdc mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc pF − − 2 2N4918 − 2N4920* Series 40 PD, POWER DISSIPATION (WATTS) 30 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (°C) 125 150 Figure 1. Power Derating VBE(off) Vin 0 VCC Vin RC RB SCOPE t, TIME ( µs) 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 VCC = 30 V APPROX −11 V VCC = 30 V IC/IB = 20 IC/IB = 10, UNLESS NOTED TJ = 25°C TJ = 150°C t1 Cjd