2N5038
NPN Silicon Transistors
Fast switching speeds and high current capacity ideally suit these
parts for use in switching regulators, inverters, wide-band amplifiers
and power oscillators in industrial and commercial applications.
Features
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•High Speed - tf = 0.5 ms (Max)
•High Current - IC(max) = 30 Amps
•Low Saturation - VCE(sat) = 2.5 V (Max) @ IC = 20 Amps
•Pb-Free Package is Available*
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
90
Vdc
Collector-Base Voltage
VCBO
150
Vdc
Collector-Emitter Voltage
VCEV
150
Vdc
Emitter-Base Voltage
VEBO
7
Vdc
IC
ICM
20
30
Adc
IB
5
Adc
PD
140
0.8
W
W/_C
TJ, Tstg
-65 to +200
_C
Collector Current Base Current -
Continuous
Peak (Note 2)
Continuous
Total Device Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
20 AMPERE
NPN SILICON
POWER TRANSISTORS
90 VOLTS - 140 WATTS
TO-204AA (TO-3)
CASE 1-07
STYLE 1
MARKING DIAGRAMS
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Symbol
Max
Unit
RqJC
1.25
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width v 10 ms, Duty Cycle v 50%.
2N5038
VCC
+30 V
RC
2.5
IC = 12 AMPS
IB1 = IB2 = 1.2 AMPS
10 W
+11 V
PW = 20 ms
DUTY CYCLE = 1%
0
2N5038G
AYYWW
MEX
G
A
YY
WW
MEX
=
=
=
=
=
Pb-Free Package
Assembly Location
Year
Work Week
Country of Origin
1N4933
-9 V
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
-5 V
Figure 1. Switching Time Test Circuit
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
August, 2007 - Rev. 12
1
Publication Order Number:
2N5038/D
2N5038
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 3)
Characteristic
Symbol
Min
Max
90
-
-
50
10
-
5
50
20
100
-
2.5
-
3.3
12
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 4)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 V)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
(VEB = 7 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
ON CHARACTERISTICS (Note 4)
DC Current Gain
(IC = 12 Adc, VCE = 5 Vdc)
hFE
Collector-Emitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
VBE(sat)
-
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Small-Signal Short-Circuit Forward Current Transfer
Ratio
(IC = 2 Adc, VCE = 10 Vdc, f = 5 MHz)
|hfe|
-
SWITCHING CHARACTERISTICS
RESISTIVE LOAD
Rise Time
(VCC = 30 Vdc)
tr
-
0.5
ms
Storage Time
(IC = 12 Adc, IB1 = IB2 = 1.2 Adc)
ts
-
1.5
ms
3. Indicates JEDEC Registered Data.
4. Pulse Test: Pulse Width v 300, ms, Duty Cycle v 2%.
ORDERING INFORMATION
Device
Package
2N5038
TO-204
2N5038G
IC, COLLECTOR CURRENT (AMPS)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
Second breakdown pulse limits are valid for duty cycles
to 10%. At high case temperatures, thermal limitations may
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
50
20
dc
5
2
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TC = 25°C
1
0.5
0.2
0.1
1
100 Units / Tray
TO-204
(Pb-Free)
100
10
Shipping
2
3
5 7 10
20 30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
Figure 2. Forward Bias Safe Operating Area
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2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
DATE 05/18/1988
SCALE 1:1
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
C
−T−
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
STYLE 2:
PIN 1. BASE
2. COLLECTOR
CASE: EMITTER
STYLE 3:
PIN 1. GATE
2. SOURCE
CASE: DRAIN
STYLE 4:
PIN 1. GROUND
2. INPUT
CASE: OUTPUT
STYLE 6:
PIN 1. GATE
2. EMITTER
CASE: COLLECTOR
STYLE 7:
PIN 1. ANODE
2. OPEN
CASE: CATHODE
STYLE 8:
PIN 1. CATHODE #1
2. CATHODE #2
CASE: ANODE
STYLE 9:
PIN 1. ANODE #1
2. ANODE #2
CASE: CATHODE
STYLE 5:
PIN 1. CATHODE
2. EXTERNAL TRIP/DELAY
CASE: ANODE
ON Semiconductor and
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
© Semiconductor Components Industries, LLC, 2000
January, 2000 − Rev. 07Z
1
Case Outline Number:
1
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