2N5190

2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS 40, 60, 80 VOLTS − 40 WATTS Features • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage 2N5190G 2N5191G 2N5192G VCEO Collector−Base Voltage 2N5190G 2N5191G 2N5192G VCBO Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 40 320 W mW/°C TJ, Tstg –65 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Operating and Storage Junction Temperature Range COLLECTOR 2, 4 Vdc 40 60 80 3 BASE 1 EMITTER Vdc 40 60 80 TO−225 CASE 77−09 STYLE 1 1 2 3 MARKING DIAGRAM YWW 2 N519xG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.12 °C/W Y = Year WW = Work Week 2N519x = Device Code x = 0, 1, or 2 G = Pb−Free Package ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 15 1 Package Shipping 2N5190G TO−225 (Pb−Free) 500 Units/Box 2N5191G TO−225 (Pb−Free) 500 Units/Box 2N5192G TO−225 (Pb−Free) 500 Units/Box Publication Order Number: 2N5191/D 2N5190G, 2N5191G, 2N5192G ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted) Symbol Characteristic Min Max Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 1) (IC = 0.1 Adc, IB = 0) 2N5190G 2N5191G 2N5192G Vdc 40 60 80 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) 2N5190G (VCE = 60 Vdc, IB = 0) 2N5191G (VCE = 80 Vdc, IB = 0) 2N5192G ICEO Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc) 2N5190G (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N5191G (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N5192G (VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N5190G (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N5191G (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N5192G ICEX Collector Cutoff Current (VCB = 40 Vdc, IE = 0) 2N5190G (VCB = 60 Vdc, IE = 0) 2N5191G (VCB = 80 Vdc, IE = 0) 2N5192G ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − − − mAdc − 1.0 − 1.0 − 1.0 mAdc − 0.1 − 0.1 − 0.1 − 2.0 − 2.0 − 2.0 mAdc − 0.1 − 0.1 − 0.1 − 1.0 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5190G/2N5191G 2N5192G (IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5190G/2N5191G 2N5192G hFE Collector−Emitter Saturation Voltage (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 4.0 Adc, IB = 1.0 Adc) VCE(sat) Base−Emitter On Voltage (IC = 1.5 Adc, VCE = 2.0 Vdc) VBE(on) − 25 20 100 80 10 7.0 − − − − 0.6 1.4 − 1.2 2.0 − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *JEDEC Registered Data. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 hFE, DC CURRENT GAIN (NORMALIZED) 2N5190G, 2N5191G, 2N5192G 10 7.0 5.0 TJ = 150°C VCE = 2.0 V VCE = 10 V 3.0 2.0 1.0 0.7 0.5 -55°C 25°C 0.3 0.2 0.1 0.004 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 1.0 2.0 3.0 4.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 2.0 TJ = 25°C 1.6 1.2 IC = 10 mA 100 mA 1.0 A 3.0 A 0.8 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 5.0 7.0 10 3.0 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 Figure 2. Collector Saturation Region θV, TEMPERATURE COEFFICIENTS (mV/°C) 2.0 TJ = 25°C 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 +2.5 +2.0 hFE@VCE + 2.0V 2 TJ = -65°C to +150°C *APPLIES FOR IC/IB ≤ +1.5 +1.0 +0.5 *qV for VCE(sat) 0 -0.5 -1.0 -1.5 qV for VBE -2.0 -2.5 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. “On” Voltages Figure 4. Temperature Coefficients http://onsemi.com 3 2.0 3.0 4.0 RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 2N5190G, 2N5191G, 2N5192G 103 VCE = 30 V 102 TJ = 150°C 101 100 100°C 10-1 REVERSE 10-2 25°C FORWARD ICES 10-3 -0.4 -0.3 -0.2 -0.1 0 +0.4 +0.5 +0.6 VCE = 30 V IC = 10 x ICES 106 IC ≈ ICES 105 IC = 2 x ICES 104 103 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) 102 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Collector Cut−Off Region Figure 6. Effects of Base−Emitter Resistance 300 VCC RC Vin TJ = +25°C 200 SCOPE RB CAPACITANCE (pF) TURN-ON PULSE APPROX +11 V Vin 0 VEB(off) +0.1 +0.2 +0.3 107 Cjd