2N5190, 2N5191, 2N5192
Silicon NPN Power
Transistors
Silicon NPN power transistors are for use in power amplifier and
switching circuits, — excellent safe area limits. Complement to PNP
2N5194, 2N5195.
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Features
• ESD Ratings: Machine Model, C; > 400 V
4.0 AMPERES
NPN SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS − 40 WATTS
Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.125 in.
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N5190
2N5191
2N5192
VCEO
40
60
80
Vdc
Collector−Base Voltage
2N5190
2N5191
2N5192
VCBO
40
60
80
Vdc
VEBO
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
40
320
W
mW/°C
TJ, Tstg
–65 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.12
°C/W
Emitter−Base Voltage
Operating and Storage Junction
Temperature Range
TO−225AA
CASE 77
STYLE 1
3 2
1
MARKING DIAGRAM
YWW
2
N519xG
THERMAL CHARACTERISTICS
Y
= Year
WW
= Work Week
2N519x = Device Code
x = 0, 1, or 2
G
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Package
Shipping†
2N5190
TO−225AA
500 Units/Box
2N5190G
TO−225AA
(Pb−Free)
500 Units/Box
2N5191
TO−225AA
500 Units/Box
2N5191G
TO−225AA
(Pb−Free)
500 Units/Box
2N5192
TO−225AA
500 Units/Box
2N5192G
TO−225AA
(Pb−Free)
500 Units/Box
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 12
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
2N5191/D
2N5190, 2N5191, 2N5192
ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
40
60
80
−
−
−
Vdc
−
−
−
1.0
1.0
1.0
mAdc
−
−
−
−
−
−
0.1
0.1
0.1
2.0
2.0
2.0
mAdc
−
−
−
0.1
0.1
0.1
mAdc
−
1.0
mAdc
25
20
10
7.0
100
80
−
−
−
−
0.6
1.4
Vdc
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
2N5190
2N5191
2N5192
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0)
2N5190
2N5191
2N5192
ICEO
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5190
2N5191
2N5192
2N5190
2N5191
2N5192
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
2N5190
2N5191
2N5192
ICEX
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
ON CHARACTERISTICS (Note 1)
hFE
DC Current Gain
(IC = 1.5 Adc, VCE = 2.0 Vdc)
2N5190/2N5191
2N5192
2N5190/2N5191
2N5192
(IC = 4.0 Adc, VCE = 2.0 Vdc)
−
Collector−Emitter Saturation Voltage
(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
Base−Emitter On Voltage
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
−
1.2
Vdc
fT
2.0
−
MHz
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
*JEDEC Registered Data.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
hFE , DC CURRENT GAIN (NORMALIZED)
2N5190, 2N5191, 2N5192
10
7.0
5.0
TJ = 150°C
VCE = 2.0 V
VCE = 10 V
3.0
2.0
1.0
0.7
0.5
−55 °C
25°C
0.3
0.2
0.1
0.004
0.007
0.01
0.02
0.03
0.05
0.1
0.2
0.3
IC, COLLECTOR CURRENT (AMP)
0.5
2.0
1.0
3.0
4.0
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
2.0
TJ = 25°C
1.6
1.2
IC = 10 mA
100 mA
1.0 A
3.0 A
0.8
0.4
0
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
50
70
100
200
300
500
Figure 2. Collector Saturation Region
θV, TEMPERATURE COEFFICIENTS (mV/°C)
2.0
TJ = 25°C
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 4.0
+2.5
+2.0
+1.5
hFE@VCE + 2.0V
2
TJ = −65°C to +150°C
*APPLIES FOR IC/IB ≤
+1.0
+0.5
*qV for VCE(sat)
0
−0.5
−1.0
−1.5
qV for VBE
−2.0
−2.5
0.005
0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltages
Figure 4. Temperature Coefficients
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3
2.0 3.0 4.0
RBE , EXTERNAL BASE−EMITTER RESISTANCE (OHM
2N5190, 2N5191, 2N5192
103
VCE = 30 V
102
TJ = 150°C
101
100
100°C
10−1
REVERSE
10− 2
25°C
ICES
−0.2 −0.1
0
+0.4 +0.5
+0.6
106
IC ≈ ICES
105
IC = 2 x ICES
104
103
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 5)
102
20
40
80
100
120
140
160
Figure 5. Collector Cut−Off Region
Figure 6. Effects of Base−Emitter Resistance
300
VCC
RC
Vin
TJ = +25°C
200
SCOPE
RB
Cjd