2N5194G, 2N5195G
Silicon PNP Power
Transistors
These devices are designed for use in power amplifier and switching
circuits; excellent safe area limits.
Features
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• Complement to NPN 2N5191, 2N5192
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
2N5194G
2N5195G
Symbol
Value
Unit
VCEO
Vdc
60
80
COLLECTOR
2, 4
Collector−Base Voltage
2N5194G
2N5195G
VCB
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
40
320
W
W/°C
– 65 to +150
°C/W
Operating and Storage Junction
Temperature Range
4 AMPERE
POWER TRANSISTORS
PNP SILICON
60 − 80 VOLTS
Vdc
60
80
TJ, Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC registered data.
3
BASE
1
EMITTER
TO−225
CASE 77−09
STYLE 1
1 2
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.12
°C/W
MARKING DIAGRAM
YWW
2
N519xG
Y
WW
2N519x
G
= Year
= Work Week
= Device Code
x = 4 or 5
= Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1
Device
Package
Shipping
2N5194G
TO−225
(Pb−Free)
500 Units / Bulk
2N5195G
TO−225
(Pb−Free)
500 Units / Bulk
Publication Order Number:
2N5194/D
2N5194G, 2N5195G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 0.1 Adc, IB = 0)
2N5194G
2N5195G
Vdc
60
80
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
2N5194G
(VCE = 80 Vdc, IB = 0)
2N5195G
ICEO
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
2N5194G
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
2N5195G
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N5194G
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N5195G
ICEX
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
2N5194G
(VCB = 80 Vdc, IE = 0)
2N5195G
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
−
mAdc
−
1.0
−
1.0
mAdc
−
−0.1
−
0.1
−
2.0
−
2.0
mAdc
−
0.1
−
0.1
−
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
2N5194G
2N5195G
(IC = 4.0 Adc, VCE = 2.0 Vdc)
2N5194G
2N5195G
hFE
Collector−Emitter Saturation Voltage (Note 3)
(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
Base−Emitter On Voltage (Note 3)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
−
25
20
100
80
10
7.0
−
−
−
−
0.6
1.4
−
1.2
2.0
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC registered data.
3. Pulse Test: Pulse Width ≤ 300Ăms, Duty Cycle ≤Ă2.0%.
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2
2N5194G, 2N5195G
hFE , DC CURRENT GAIN (NORMALIZED)
10
7.0
5.0
TJ = 150°C
VCE = 2.0 V
VCE = 10 V
3.0
2.0
1.0
0.7
0.5
25°C
-55°C
0.3
0.2
0.1
0.004
0.007 0.01
0.02
0.03
0.05
0.1
0.2
0.3
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
3.0 4.0
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
2.0
1.6
1.2
IC = 10 mA
100 mA
1.0 A
3.0 A
0.8
TJ = 25°C
0.4
0
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
50
70
100
200
300
500
Figure 2. Collector Saturation Region
TJ = 25°C
VOLTAGE (VOLTS)
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
2.0
2.0 3.0 4.0
+2.5
*APPLIES FOR IC/IB ≤ hFE @ VCE
TJ = -65°C to +150°C
+2.0
+1.5
+1.0
+0.5
*qVC for VCE(sat)
0
-0.5
-1.0
-1.5
qVB for VBE
-2.0
-2.5
0.005 0.01 0.020.03 0.05
0.1
0.2 0.3 0.5
1.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltage
Figure 4. Temperature Coefficients
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3
2.0 3.0 4.0
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
2N5194G, 2N5195G
103
IC, COLLECTOR CURRENT (A)
μ
VCE = 30 Vdc
102
TJ = 150°C
101
100°C
100
REVERSE
10-1
FORWARD
25°C
10-2
10-3
+0.4 +0.3 +0.2 +0.1
ICES
0
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6
107
VCE = 30 V
106
IC = 10 x ICES
105
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 5)
103
102
20
40
60
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VCC
TURN-ON PULSE
RC
RB
SCOPE
APPROX
+9.0 V
+4.0 V
RB AND RC VARIED
TO OBTAIN DESIRED
CURRENT LEVELS
t3
TURN-OFF PULSE
200
Ceb
100
Ccb
70
t1 ≤ 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
DUTY CYCLE ≈ 2.0%
50
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
2.0
2.0
IC/IB = 10
TJ = 25°C
1.0
1.0
0.3
0.2
tr @ VCC = 10 V
td @ VBE(off) = 2.0 V
0.03
0.02
0.2 0.3
0.05 0.07 0.1
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
ts′
0.7
0.5
tr @ VCC = 30 V
t, TIME (s)
μ
t, TIME (s)
μ
160
300
Figure 7. Switching Time Equivalent Test Circuit
0.1
0.07
0.05
140
500
Cjd