2N5401YBU

                                                                                                                                                                                                                                                                                                                                           2N5401 Amplifier Transistor Features • Collector-Emitter Voltage: VCEO = 150V • Collector Dissipation: PC (max) = 625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector Ordering Information Part Number Top Mark Package Packing Method Pack Quantity 2N5401YBU 2N5401 TO-92 3L Bulk 10000 2N5401YTA 2N5401 TO-92 3L Ammo 2000 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25 C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V -600 mA -55 to 150 C IC TJ, TSTG Collector Current Operating and Storage Junction Temperature Range © 1999 Fairchild Semiconductor Corporation 2N5401 Rev. 2.1 www.fairchildsemi.com 1 2N5401 — Amplifier Transistor May 2016 Values are at TA = 25 C unless otherwise noted. Symbol PD R JA Parameter Max. Total Device Dissipation 625 mW 5 mW/ C 200 C/W Derate above 25 C Thermal Resistance, Junction to Ambient Unit Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Conditions (2) Min. Typ. Max. Unit IC = -100 A, IE = 0 -160 V IC = -1 mA, IB = 0 -150 V -5 Emitter-Base Breakdown Voltage IE = -10 A, IC = 0 ICBO Collector Cut-Off Current V CB = -120 V, IE = 0 -50 A IEBO Emitter Cut-Off Current VEB = -3 V, IC = 0 -50 A IC = -1 mA, VCE = -5 V hFE1 DC Current Gain(2) IC = -10 mA, VCE = -5 V Collector-Emitter Saturation Voltage(2) VBE(sat) Base-Emitter Saturation Voltage(2) fT Cob NF 30 Standard Class 60 240 Y Class 120 240 IC = -50 mA, VCE = -5 V VCE(sat) V 50 IC = -10 mA, IB = -1 mA -0.2 V IC = -50 mA, IB = -5 mA -0.5 V IC = -10 mA, IB = -1 mA -1.0 V IC = -50 mA, IB = -5 mA -1.0 V 400 MHz Current Gain Bandwidth Product IC = -10 mA, VCE = -10 V, f = 100 MHz Output Capacitance VCB = -10 V, IE = 0, f = 1 MHz 6 pF Noise Figure IC = -250 A, VCE = -5 V,RS = 1 k , f = 10 Hz to 15.7 kHz 8 dB 100 Note: 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. © 1999 Fairchild Semiconductor Corporation 2N5401 Rev. 2.1 www.fairchildsemi.com 2 2N5401 — Amplifier Transistor Thermal Characteristics(1) 2N5401 — Amplifier Transistor 1000 hFE, DC CURRENT GAIN VCE = -5V 100 10 -1 -10 -100 -1000 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics -10 IC = 10 IB VBE(sat) -1 VCE(sat) -0.1 -0.01 -1 -10 -100 IC[mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 -1000 IE = 0 f = 1MHz Cob [pF], CAPACITANCE IC [mA], COLLECTOR CURRENT VCE = -5V -100 -10 -1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 10 1 0.1 -1.2 VBE[V], BASE-EMITTER VOLTAGE -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT -1000 Figure 4. Output Capacitance 1000 VCE = -10V 100 10 1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product © 1999 Fairchild Semiconductor Corporation 2N5401 Rev. 2.1 www.fairchildsemi.com 3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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