2N5486_06

2N5486 JFET VHF/UHF Amplifiers N−Channel — Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain −Gate Voltage Reverse Gate −Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VDG VGSR ID IG(f) PD TJ, Tstg Value 25 25 30 10 350 2.8 −65 to +150 Unit Vdc Vdc mAdc mAdc mW mW/°C °C http://onsemi.com 1 DRAIN 3 GATE 2 SOURCE Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO−92 (TO−226AA) CASE 29−11 STYLE 5 MARKING DIAGRAM 2N 5486 AYWW G G 2N5486 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device 2N5486 2N5486G Package TO−92 TO−92 (Pb−Free) Shipping 1000 Units / Bulk 1000 Units / Bulk *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 October, 2006 − Rev. 2 Publication Order Number: 2N5486/D 2N5486 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage ON CHARACTERISTICS Zero−Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS ⎪yfs⎪ Re(yis) ⎪yos⎪ Re(yos) Re(yfs) Ciss Crss Coss 8.0 − 20 mAdc (IG = −1.0 mAdc, VDS = 0) (VGS = −20 Vdc, VDS = 0) (VGS = −20 Vdc, VDS = 0, TA = 100°C) (VDS = 15 Vdc, ID = 10 nAdc) V(BR)GSS IGSS VGS(off) −25 − − −2.0 − − − − − −1.0 −0.2 −6.0 Vdc nAdc mAdc Vdc Symbol Min Typ Max Unit SMALL− SIGNAL CHARACTERISTICS Forward Transfer Admittance Input Admittance Output Admittance Output Conductance Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 400 MHz) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 400 MHz) (VDS = 15 Vdc, VGS = 0, f = 400 MHz) (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) 4000 − − − 3500 − − − − − − − − − − − 8000 1000 75 100 − 5.0 1.0 2.0 mmhos mmhos mmhos mmhos mmhos pF pF pF COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS gis @ IDSS bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 1. Input Admittance (yis) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 |bfs| @ IDSS |bfs| @ 0.25 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 10 Figure 2. Reverse Transfer Admittance (yrs) gfs @ IDSS gfs @ 0.25 IDSS bos @ IDSS and 0.25 IDSS gos @ IDSS gos @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 3. Forward Transadmittance (yfs) http://onsemi.com 2 Figure 4. Output Admittance (yos) 2N5486 COMMON SOURCE CHARACTERISTICS S−PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 40° 20° 10° 0° 1.0 350° 100 100 0.9 200 340° 330° 320° 40° 30° 20° 10° 0° 0.4 350° 340° 330° 320° ID = 0.25 IDSS 200 300 400 300 60° 70° 80° 90° 100° 110° 120° 0.8 ID = IDSS 500 400 600 0.7 500 600 0.6 800 900 700 900 700 800 280° 270° 260° 250° 240° 80° 90° 100° 110° 120° 290° 70° 400 300 200 100 0.0 280° 270° 260° 250° 240° 300° 60° 800 600 700 500 0.1 310° 50° 0.3 ID = IDSS, 0.25 IDSS 900 0.2 300° 290° 310° 50° 130° 230° 130° 230° 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 180° 190° 200° 210° 220° Figure 5. S11s 30° 40° 20° 10° 0° 350° 340° 330° 320° 40° 30° 20° 10° Figure 6. S12s 0° 350° 340° 330° 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320° 0.6 50° 0.5 60° 70° 80° 90° 100° 110° 120° 900 800 700 600 500 400 300 ID = IDSS 200 100 0.5 230° 0.6 130° 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 0.3 900 0.3 0.4 300° 290° 280° 270° 260° 250° 240° 60° 70° 80° 90° 100° 110° 120° 310° 50° 310° 300° 0.7 290° 280° 270° 260° 250° 240° 0.6 130° 230° 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 180° 190° 200° 210° 220° Figure 7. S21s http://onsemi.com 3 Figure 8. S22s 2N5486 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25°C) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 gig @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS gig @ IDSS grg @ 0.25 IDSS big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.007 0.005 Figure 9. Input Admittance (yig) Figure 10. Reverse Transfer Admittance (yrg) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS gfg @ IDSS gfg @ 0.25 IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 bog @ IDSS, 0.25 IDSS gog @ IDSS brg @ 0.25 IDSS gog @ 0.25 IDSS 0.01 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 11. Forward Transfer Admittance (yfg) Figure 12. Output Admittance (yog) http://onsemi.com 4 2N5486 COMMON GATE CHARACTERISTICS S−PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 40° 20° 10° 0° 0.7 100 0.6 50° 100 0.5 60° ID = IDSS 70° 80° 90° 100° 110° 120° 0.4 200 300 400 500 600 900 700 0.3 800 900 ID = 0.25 IDSS 200 300 400 500 600 700 800 290° 280° 270° 260° 250° 240° 70° 80° 90° 100° 110° 120° 600 ID = IDSS 700 800 900 130° 230° 130° 900 0.03 230° 100 500 600 700 800 240° 0.02 ID = 0.25 IDSS 0.01 0.01 290° 280° 270° 260° 250° 0.02 300° 60° 300° 310° 50° 0.03 310° 350° 340° 330° 320° 40° 30° 20° 10° 0° 0.04 350° 340° 330° 320° 0.0 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 0.04 180° 190° 200° 210° 220° Figure 13. S11g 30° 40° 20° 10° 0° 0.5 100 0.4 50° 0.3 60° 70° 80° 0.1 90° 100° 110° 120° 900 900 260° 250° 240° 100° 110° 120° 0.2 ID = 0.25 IDSS 300° 290° 280° 270° 60° 70° 80° 90° ID = IDSS 100 310° 50° 350° 340° 330° 320° 40° 30° 20° Figure 14. S12g 10° 0° 1.5 1.0 100 0.9 350° 300 200 400 600 800 900 310° 340° 500 700 330° 320° ID = IDSS, 0.25 IDSS 0.8 300° 0.7 290° 280° 270° 260° 250° 240° 0.6 130° 230° 130° 230° 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 180° 190° 200° 210° 220° Figure 15. S21g http://onsemi.com 5 Figure 16. S22g 2N5486 PACKAGE DIMENSIONS TO−92 (TO−226AA) CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N DIM A B C D G H J K L N P R V STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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