2N5550_07

2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage 2N5550 2N5551 Collector − Base Voltage 2N5550 2N5551 Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 160 180 6.0 600 625 5.0 1.5 12 −55 to +150 Vdc mAdc mW mW/°C W mW/°C °C TO−92 CASE 29 STYLE 1 12 1 Symbol VCEO 140 160 Vdc Value Unit Vdc 1 EMITTER 2 BASE 3 STRAIGHT LEAD BULK PACK 3 BENT LEAD TAPE & REEL AMMO PACK 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W 2N 555x AYWW G G MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. x = 0 or 1 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 1 March, 2007 − Rev. 5 Publication Order Number: 2N5550/D 2N5550, 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0 ) Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2N5550 2N5551 2N5550 2N5551 hfe NF − − 10 8.0 fT Cobo Cibo − − 50 30 20 200 − dB 100 − 300 6.0 MHz pF pF hFE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 VCE(sat) Both Types 2N5550 2N5551 VBE(sat) Both Types 2N5550 2N5551 − − − 1.0 1.2 1.0 Vdc − − − 0.15 0.25 0.20 Vdc 60 80 60 80 20 30 − − 250 250 − − − 2N5550 2N5551 2N5550 2N5551 IEBO V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 V(BR)EBO 6.0 ICBO − − − − − 100 50 100 50 50 nAdc mAdc nAdc − Vdc 160 180 − − Vdc 140 160 − − Vdc Symbol Min Max Unit http://onsemi.com 2 2N5550, 2N5551 500 300 h FE , DC CURRENT GAIN 200 100 −55 °C 50 30 20 10 7.0 5.0 0.1 TJ = 125°C 25°C VCE = 1.0 V VCE = 5.0 V 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 Figure 1. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region 101 VCE = 30 V IC, COLLECTOR CURRENT (μ A) 100 10−1 10−2 10−3 10−4 10−5 0.4 TJ = 125°C V, VOLTAGE (VOLTS) 1.0 0.8 IC = ICES TJ = 25°C VBE(sat) @ IC/IB = 10 0.6 75°C REVERSE 25°C FORWARD 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE−EMITTER VOLTAGE (VOLTS) 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 Figure 3. Collector Cut−Off Region Figure 4. “On” Voltages http://onsemi.com 3 2N5550, 2N5551 2.5 2.0 1.5 1.0 0.5 0 − 0.5 − 1.0 − 1.5 − 2.0 − 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 qVB for VBE(sat) qVC for VCE(sat) TJ = − 55°C to +135°C θV, TEMPERATURE COEFFICIENT (mV/°C) Figure 5. Temperature Coefficients 100 70 50 10.2 V Vin 10 ms INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 mF C, CAPACITANCE (pF) VBB −8.8 V 100 RB 5.1 k Vin 100 1N914 3.0 k VCC 30 V RC Vout 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 Cibo TJ = 25°C Cobo Values Shown are for IC @ 10 mA 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit Figure 7. Capacitances 1000 500 300 t, TIME (ns) 200 100 50 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V tr @ VCC = 30 V IC/IB = 10 TJ = 25°C tr @ VCC = 120 V 5000 3000 2000 1000 500 300 200 100 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 100 200 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 100 200 ts @ VCC = 120 V tf @ VCC = 120 V tf @ VCC = 30 V IC/IB = 10 TJ = 25°C Figure 8. Turn−On Time t, TIME (ns) Figure 9. Turn−Off Time http://onsemi.com 4 2N5550, 2N5551 ORDERING INFORMATION Device 2N5550G 2N5550RLRPG 2N5551G 2N5551RL1G 2N5551RLRAG 2N5551RLRPG 2N55551ZL1G Package TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) 2000 / Tape & Ammo Box 2000 / Tape & Reel Shipping† 5000 Units / Bulk 2000 / Tape & Ammo Box 5000 Units / Bulk †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 2N5550, 2N5551 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A R P L SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− B STRAIGHT LEAD BULK PACK K XX G H V 1 D J C SECTION X−X N N R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR K XX G D J V C SECTION X−X N 1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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