2N5655G, 2N5657G
Plastic NPN Silicon
High-Voltage Power
Transistors
These devices are designed for use in line−operated equipment such
as audio output amplifiers; low−current, high−voltage converters; and
AC line relays.
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0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250−350 VOLTS, 20 WATTS
Features
• Excellent DC Current Gain
• High Current−Gain − Bandwidth Product
• These Devices are Pb−Free and are RoHS Compliant*
COLLECTOR
2, 4
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
2N5655G
2N5657G
Symbol
Value
Unit
VCEO
Vdc
Collector−Base Voltage
2N5655G
2N5657G
VCB
Emitter−Base Voltage
VEB
6.0
Vdc
IC
0.5
Adc
ICM
1.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
20
0.16
W
W/°C
– 65 to + 150
°C/W
Collector Current − Continuous
Collector Current − Peak
Operating and Storage Junction
Temperature Range
3
BASE
250
350
Vdc
1
EMITTER
275
375
TJ, Tstg
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC registered data.
YWW
2
N565xG
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25
°C/W
Y
WW
2N565x
G
= Year
= Work Week
= Device Code
x = 5 or 7
= Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 12
1
Device
Package
Shipping
2N5655G
TO−225
(Pb−Free)
500 Units / Bulk
2N5657G
TO−225
(Pb−Free)
500 Units / Bulk
Publication Order Number:
2N5655/D
2N5655G, 2N5657G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc (inductive), L = 50 mH)
2N5655G
2N5657G
VCEO(sus)
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
2N5655G
2N5657G
V(BR)CEO
Vdc
250
350
Vdc
250
350
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
2N5655G
(VCE = 250 Vdc, IB = 0)
2N5657G
ICEO
Collector Cutoff Current
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc)
2N5655G
(VCE = 350 Vdc, VEB(off) = 1.5 Vdc)
2N5657G
(VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)
2N5655G
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)
2N5657G
ICEX
Collector Cutoff Current
(VCB = 275 Vdc, IE = 0)
2N5655G
(VCB = 375 Vdc, IE = 0)
2N5657G
ICBO
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
−
−
−
−
mAdc
−
0.1
−
0.1
mAdc
−
0.1
−
0.1
−
1.0
−
1.0
mAdc
−
10
−
10
−
10
25
30
15
5.0
−
250
−
−
−
−
−
1.0
2.5
10
−
1.0
10
−
−
25
20
−
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 250 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE
Collector−Emitter Saturation Voltage (Note 3)
(IC = 100 mAdc, IB = 10 mAdc)
(IC = 250 mAdc, IB = 25 mAdc)
(IC = 500 mAdc, IB = 100 mAdc)
−
VCE(sat)
Base−Emitter Voltage
(IC = 100 mAdc, VCE = 10 Vdc) (Note 3)
Vdc
VBE
Vdc
DYNAMIC CHARACTERISTICS
fT
Current−Gain − Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) (Note 4)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
Small−Signal Current Gain
(IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
MHz
pF
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC registered data for 2N5655 Series.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
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2
2N5655G, 2N5657G
PD, POWER DISSIPATION (WATTS)
40
30
50 mH
X
20
200
TO SCOPE
Hg RELAY
+
10
+
6.0 V
50 V
300
0
-
Y
25
50
75
100
TC, CASE TEMPERATURE (°C)
1.0
150
125
Figure 1. Power Derating
Figure 2. Sustaining Voltage Test Circuit
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
1.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
IC, COLLECTOR CURRENT (AMP)
10 ms
0.5
500 ms
TJ = 150°C
0.2
1.0 ms
d
c
Second Breakdown Limit
Thermal Limit @ TC = 25°C
Bonding Wire Limit
Curves apply below rated VCEO
2N5655
0.1
0.05
0.02
0.01
2N5657
30
20
40
60
100
200 300 400
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
600
Figure 3. Active−Region Safe Operating Area
300
hFE , DC CURRENT GAIN
200
100
70
VCE = 10 V
VCE = 2.0 V
TJ = +150°C
+100°C
50
+ 25°C
30
20
10
1.0
-55°C
2.0
3.0
5.0
7.0
10
20
30
50
IC, COLLECTOR CURRENT (mA)
Figure 4. Current Gain
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3
70
100
200
300
500
2N5655G, 2N5657G
1.0
V, VOLTAGE (VOLTS)
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
0.6
0.4
VCE(sat) @ IC/IB = 10
0.2
TJ = + 25°C
IC/IB = 5.0
0
10
20
30
50
100
200 300
IC, COLLECTOR CURRENT (mA)
500
Figure 5. “On” Voltages
300
TJ = + 25°C
200
C, CAPACITANCE (pF)
Cib
100
70
50
30
20
10
0.1
Cob
0.2
0.5
1.0 2.0
5.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 6. Capacitance
10
10
2.0
t, TIME (s)
μ
1.0
IC/IB = 10
VCC = 300 V, VBE(off) = 2.0 V
(2N5657, only)
VCC = 100 V, VBE(off) = 0 V
0.5
0.2
IC/IB = 10
5.0
t, TIME (s)
μ
tr
5.0
td
ts
2.0
tf
1.0
VCC = 100 V
0.5
0.1
0.05
0.01
1.0
VCC = 300 V
(Type 2N5657, only)
0.2
0.02
2.0
5.0
10
20
50
100
IC, COLLECTOR CURRENT (mA)
200
0.1
1.0
500
Figure 7. Turn−On Time
2.0
5.0
10
20
50
100
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn−Off Time
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4
200
500
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AD
4
DATE 25 MAR 2015
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
D
P
1
2
3
L1
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
GENERIC
MARKING DIAGRAM*
L
YWW
XX
XXXXXG
2X
b2
2X
e
b
FRONT VIEW
Y
= Year
WW
= Work Week
XXXXX = Device Code
G
= Pb−Free Package
c
SIDE VIEW
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
STYLE 2:
PIN 1. CATHODE
2., 4. ANODE
3. GATE
STYLE 3:
PIN 1. BASE
2., 4. COLLECTOR
3. EMITTER
STYLE 4:
PIN 1. ANODE 1
2., 4. ANODE 2
3. GATE
STYLE 5:
PIN 1. MT 1
2., 4. MT 2
3. GATE
STYLE 6:
PIN 1. CATHODE
2., 4. GATE
3. ANODE
STYLE 7:
PIN 1. MT 1
2., 4. GATE
3. MT 2
STYLE 8:
PIN 1. SOURCE
2., 4. GATE
3. DRAIN
STYLE 9:
PIN 1. GATE
2., 4. DRAIN
3. SOURCE
STYLE 10:
PIN 1. SOURCE
2., 4. DRAIN
3. GATE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42049B
TO−225
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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