2N5686G

2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features http://onsemi.com 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS, 300 WATTS •High Current Capability - IC Continuous = 50 Amperes •DC Current Gain - hFE = 15-60 @ IC = 25 Adc •Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •Pb-Free Packages are Available* MARKING DIAGRAM MAXIMUM RATINGS (Note 1) Rating Collector-Emitter Voltage Symbol Value Unit VCEO 80 Vdc Collector-Base Voltage VCB 80 Vdc Emitter-Base Voltage VEB 5.0 Vdc IC 50 Adc Collector Current - Continuous Base Current IB 15 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 300 1.715 mW mW/°C Operating and Storage Temperature Range TJ, Tstg -65 to +200 °C 2N568xG AYYWW MEX TO-204 (TO-3) CASE 197A STYLE 1 2N568x THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case qJC 0.584 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) 300 G A YY WW MEX ORDERING INFORMATION Device 2N5684G 250 2N5686 200 = Device Code x = 4 or 6 = Pb-Free Package = Location Code = Year = Work Week = Country of Orgin 2N5686G 150 Package Shipping TO-3 (Pb-Free) 100 Units/Tray TO-3 100 Units/Tray TO-3 (Pb-Free) 100 Units/Tray 100 50 0 0 20 40 60 80 100 120 140 TEMPERATURE (°C) 160 180 200 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. © Semiconductor Components Industries, LLC, 2007 October, 2007 - Rev. 12 1 Publication Order Number: 2N5684/D 2N5684 (PNP), 2N5686 (NPN) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Characteristic Symbol Min Max Unit VCEO(sus) 80 - Vdc ICEO - 1.0 mAdc - 2.0 10 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3) (IC = 0.2 Adc, IB = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) Collector Cutoff Current ICEX (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) mAdc Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO - 2.0 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO - 5.0 mAdc 15 5.0 60 - - 1.0 5.0 ON CHARACTERISTICS DC Current Gain (Note 3) hFE (IC = 25 Adc, VCE = 2.0 Vdc) (IC = 50 Adc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (Note 3) - VCE(sat) (IC = 25 Adc, IB = 2.5 Adc) (IC = 50 Adc, IB = 10 Adc) Base-Emitter Saturation Voltage (Note 2) Base-Emitter On Voltage (Note 2) Vdc (IC = 25 Adc, IB = 2.5 Adc) VBE(sat) - 2.0 Vdc (IC = 25 Adc, VCE = 2.0 Vdc) VBE(on) - 2.0 Vdc fT 2.0 - MHz pF DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5684 2N5686 Cob - 2000 1200 (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 15 - Small-Signal Current Gain 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. VCC -30 V RL +2.0 V TO SCOPE tr ≤ 20 ns 0 RB tr ≤ 20ns 1.0 0.7 0.5 -12V DUTY CYCLE ≈ 2.0% VCC TO SCOPE tr ≤ 20 ns 0 RB tr ≤ 20ns 10 to 100 μs -30 V RL +10V -12V t, TIME (s) μ 10 to 100 μs VBB tr 0.3 0.2 td 0.1 0.07 0.05 0.03 0.02 TJ = 25°C IC/IB = 10 VCC = 30 V 0.01 0.5 0.7 1.0 +4.0 V 2N5684 (PNP) 2N5686 (NPN) DUTY CYCLE ≈ 2.0% FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn-On Time Figure 2. Switching Time Test Circuit http://onsemi.com 2 30 50 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N5684 (PNP), 2N5686 (NPN) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 P(pk) θJC(t) = r(t) θJC θJC = 0.584°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2 0.1 0.1 0.07 0.05 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 100 20 10 5.0 2.0 1.0 0.5 100 μs 500 μs 50 dc 5.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 1.0 ms TJ = 200°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO The data of Figure 5 is based on T J(pk) = 200_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.2 0.1 1.0 2N5684, 2N5686 2.0 3.0 20 30 50 70 100 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active-Region Safe Operating Area 4.0 t, TIME (s) μ 2.0 ts 5000 TJ = 25°C IB1 = IB2 IC/IB = 10 VCE = 30 V TJ = 25°C 3000 C, CAPACITANCE (pF) 2N5684 (PNP) 2N5686 (NPN) 3.0 1.0 0.8 0.6 0.4 tf Cib 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 500 0.1 50 Figure 6. Turn-Off Time Cob Cib 1000 700 0.3 0.2 0.5 0.7 1.0 2000 2N5684 (PNP) 2N5686 (NPN) 0.2 Cob 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 3 50 100 2N5684 (PNP), 2N5686 (NPN) PNP 2N5684 NPN 2N5686 500 500 TJ = +150°C VCE = 2.0 V VCE = 10 V +25°C 100 70 +25°C 100 70 -55°C 50 30 20 10 7.0 5.0 0.5 0.7 1.0 VCE = 2.0 V VCE = 10 V TJ = +150°C 300 200 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 300 200 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 -55°C 30 20 10 7.0 5.0 0.5 0.7 1.0 50 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 2.0 2.0 TJ = 25°C IC = 10 A 40 A 25 A 1.2 IC = 10 A 25 A 40 A 1.2 0.8 0.8 0.4 0.4 0 TJ = 25°C 1.6 1.6 0.1 0.2 0.5 1.0 2.0 3.0 IB, BASE CURRENT (AMP) 5.0 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IB, BASE CURRENT (AMP) 5.0 10 20 30 50 Figure 9. Collector Saturation Region 2.5 2.0 TJ = 25°C TJ = 25°C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.0 1.5 1.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.5 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0 0.5 0.7 50 IC, COLLECTOR CURRENT (AMP) 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−204 (TO−3) CASE 197A−05 ISSUE K DATE 21 FEB 2000 SCALE 1:1 A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C E D −T− U DIM A B C D E G H K L N Q U V K 2 PL 0.30 (0.012) V SEATING PLANE T Q M M Y M −Y− L 2 G H B INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 1 GENERIC MARKING DIAGRAM* −Q− 0.25 (0.010) STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR M T Y STYLE 2: PIN 1. EMITTER 2. BASE CASE: COLLECTOR M STYLE 3: PIN 1. GATE 2. SOURCE CASE: DRAIN XXXXXX A YYWW STYLE 4: PIN 1. ANODE = 1 2. ANODE = 2 CASE: CATHODES XXXXX A YY WW = Specific Device Code = Assembly Locationa = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. DOCUMENT NUMBER: STATUS: 98ASB42128B ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 TO−204 (TO−3) http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98ASB42128B PAGE 2 OF 2 ISSUE K REVISION LEGALLY CHANGED TO ON DATE 21 FEB 2000 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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