2N6035G

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G,2N6039G (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features 4.0 AMPERES DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40, 60, 80 VOLTS, 40 WATTS • ESD Ratings: Machine Model, C; > 400 V • • NPN Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125 in These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value VCEO Collector−Base Voltage 2N6034G 2N6035G, 2N6038G 2N6036G, 2N6039G VCBO Emitter−Base Voltage VEBO 5.0 Vdc IC 4.0 Adc ICM 8.0 Apk Base Current IB 100 mAdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 40 320 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C – 65 to + 150 °C Collector Current − Peak Operating and Storage Junction Temperature Range Vdc 40 60 80 BASE 3 BASE 3 EMITTER 1 EMITTER 1 2N6038 2N6039 2N6034 2N6035 2N6036 Vdc 40 60 80 TJ, Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic COLLECTOR 2, 4 Unit Collector−Emitter Voltage 2N6034G 2N6035G, 2N6038G 2N6036G, 2N6039G Collector Current − Continuous PNP COLLECTOR 2, 4 Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.12 °C/W Thermal Resistance, Junction−to−Ambient RqJA 83.3 °C/W TO−225 CASE 77−09 STYLE 1 1 2 3 MARKING DIAGRAM YWW 2 N603xG Y WW 2N603x G = Year = Work Week = Device Code x = 4, 5, 6, 8, 9 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 15 1 Publication Order Number: 2N6035/D 2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) 2N6034G 2N6035G, 2N6038G 2N6036G, 2N6039G VCEO(sus) Vdc 40 60 80 Collector−Cutoff Current (VCE = 40 Vdc, IB = 0) 2N6034G (VCE = 60 Vdc, IB = 0) 2N6035G, 2N6038G (VCE = 80 Vdc, IB = 0) 2N6036G, 2N6039G ICEO Collector−Cutoff Current (VCE = 40 Vdc, VBE(off) = 1.5 Vdc) 2N6034G (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N6035G, 2N6038G (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N6036G, 2N6039G (VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N6034G (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N6035G, 2N6038G (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N6036G, 2N6039G ICEX Collector−Cutoff Current (VCB = 40 Vdc, IE = 0) 2N6034G (VCB = 60 Vdc, IE = 0) 2N6035G, 2N6038G (VCB = 80 Vdc, IE = 0) 2N6036G, 2N6039G ICBO Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − − − mA − 100 − 100 − 100 mA − 100 − 100 − 100 − 500 − 500 − 500 mAdc − 0.5 − 0.5 − 0.5 − 2.0 500 750 100 − 15,000 − − − 2.0 3.0 − 4.0 − 2.8 25 − mAdc ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) (IC = 4.0 Adc, IB = 40 mAdc) VCE(sat) Base−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 40 mAdc) VBE(sat) Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc) VBE(on) − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Small−Signal Current−Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) |hfe| Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6034G, 2N6035G, 2N6036G 2N6038G, 2N6039G Cob − pF − − 200 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Indicates JEDEC Registered Data. http://onsemi.com 2 2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) VCC -30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA RC SCOPE TUT V2 approx +8.0 V RB D1 51 0 V1 approx -12 V ≈ 8.0 k ≈ 60 +4.0 V 25 ms for td and tr, D1 is disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. tr, tf ≤ 10 ns DUTY CYCLE = 1.0% For NPN test circuit, reverse diode, polarities and input pulses. Figure 1. Switching Times Test Circuit 4.0 VCC = 30 V IC/IB = 250 ts IB1 = IB2 TJ = 25°C t, TIME (s) μ 2.0 tf 1.0 0.8 tr 0.6 0.4 td @ VBE(off) = 0 PNP NPN 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 r(t), TRANSIENT THERMAL RESISTANCE, NORMALIZED Figure 2. Switching Times 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.03 P(pk) qJC(t) = r(t) qJC qJC = 3.12°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.05 0.02 0.01 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 Figure 3. Thermal Response http://onsemi.com 3 20 30 50 100 200 300 500 1000 2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) ACTIVE−REGION SAFE−OPERATING AREA IC, COLLECTOR CURRENT (AMP) 5.0ms 3.0 2.0 1.0ms TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.3 0.2 7.0 1.0ms dc TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 1.0 0.7 0.5 0.3 0.2 2N6036 2N6035 70 20 10 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.1 5.0 100 100 ms 5.0ms 3.0 2.0 dc 1.0 0.7 0.5 0.1 5.0 1.0 7.0 5.0 100 ms IC, COLLECTOR CURRENT (AMP) 1.0 7.0 5.0 2N6039 2N6038 7.0 20 10 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. 2N6035, 2N6036 100 Figure 5. 2N6038, 2N6039 200 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 4 and 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TC = 25°C C, CAPACITANCE (pF) 100 70 50 Cob 30 Cib 20 PNP NPN 10 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 6. Capacitance PNP 2N6034, 2N6035, 2N6036 NPN 2N6038, 2N6039 6.0 k 6.0 k 4.0 k 4.0 k 3.0 k hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 3.0 V TC = 125°C 25°C 2.0 k -55°C 1.0 k 800 600 400 300 0.04 0.06 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 k 25°C 2.0 k -55°C 1.0 k 800 600 400 300 0.04 0.06 4.0 Figure 7. DC Current Gain http://onsemi.com 4 VCE = 3.0 V TJ = 125°C 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) 3.4 TJ = 25°C 3.0 2.6 IC = 0.5 A 1.0 A 2.0 A 4.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 20 100 50 3.4 3.0 TJ = 25°C IC = 0.5 A 2.6 1.0 A 4.0 A 2.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 10 5.0 IB, BASE CURRENT (mA) 20 50 100 Figure 8. Collector Saturation Region 2.2 2.2 TJ = 25°C TJ = 25°C 1.4 1.8 VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.1 0.2 0.4 0.6 1.0 0.2 0.04 0.06 2.0 4.0 IC, COLLECTOR CURRENT (AMP) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 9. “On” Voltages ORDERING INFORMATION Device Package Shipping 2N6034G TO−225 (Pb−Free) 500 Units / Box 2N6035G TO−225 (Pb−Free) 500 Units / Box 2N6036G TO−225 (Pb−Free) 500 Units / Box 2N6038G TO−225 (Pb−Free) 500 Units / Box 2N6039G TO−225 (Pb−Free) 500 Units / Box http://onsemi.com 5 2.0 4.0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AD 4 DATE 25 MAR 2015 3 2 1 1 2 3 FRONT VIEW BACK VIEW SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB DIM A A1 b b2 c D E e L L1 P Q D P 1 2 3 L1 MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 GENERIC MARKING DIAGRAM* L YWW XX XXXXXG 2X b2 2X e b FRONT VIEW Y = Year WW = Work Week XXXXX = Device Code G = Pb−Free Package c SIDE VIEW *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE STYLE 2: PIN 1. CATHODE 2., 4. ANODE 3. GATE STYLE 3: PIN 1. BASE 2., 4. COLLECTOR 3. EMITTER STYLE 4: PIN 1. ANODE 1 2., 4. ANODE 2 3. GATE STYLE 5: PIN 1. MT 1 2., 4. MT 2 3. GATE STYLE 6: PIN 1. CATHODE 2., 4. GATE 3. ANODE STYLE 7: PIN 1. MT 1 2., 4. GATE 3. MT 2 STYLE 8: PIN 1. SOURCE 2., 4. GATE 3. DRAIN STYLE 9: PIN 1. GATE 2., 4. DRAIN 3. SOURCE STYLE 10: PIN 1. SOURCE 2., 4. DRAIN 3. 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