2N6042G

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − • • • • • VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043 = 100 Vdc (Min) − 2N6042, 2N6045 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045 Monolithic Construction with Built−In Base−Emitter Shunt Resistors Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage Collector−Base Voltage Symbol Value Unit 2N6040 2N6043 2N6042 2N6045 VCEO 60 Vdc 2N6040 2N6043 2N6042 2N6045 VCB Emitter−Base Voltage 60 100 MARKING DIAGRAM 2N604xG AYWW Vdc IC 8.0 16 Adc Base Current IB 120 mAdc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 75 0.60 W W/°C TJ, Tstg –65 to +150 °C Operating and Storage Junction Temperature Range TO−220 CASE 221A STYLE 1 Vdc 5.0 Continuous Peak DARLINGTON, 8 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60 − 100 VOLTS, 75 WATTS 100 VEB Collector Current www.onsemi.com Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2N604x = Device Code x = 0, 2, 3, or 5 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 10 1 Publication Order Number: 2N6040/D PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic qJC 1.67 °C/W Thermal Resistance, Junction−to−Ambient qJA 57 °C/W *ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Max 60 100 − − − 20 20 − − − − − 20 20 200 200 200 − − 20 20 − 2.0 1000 1000 100 20.000 20,000 − − − − 2.0 2.0 4.0 Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) 2N6040, 2N6043 2N6042, 2N6045 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 100 Vdc, IB = 0) 2N6040, 2N6043 2N6042, 2N6045 Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) 2N6040, 2N6043 2N6042, 2N6045 2N6040, 2N6043 2N6041, 2N6044 2N6042, 2N6045 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) 2N6040, 2N6043 2N6042, 2N6045 Vdc − mA ICEO mA ICEX mA ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS hFE DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) 2N6040, 2N6043, 2N6042, 2N6045 All Types Collector−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 16 mAdc) (IC = 3.0 Adc, IB = 12 mAdc) (IC = 8.0 Adc, IB = 80 Adc) 2N6040, 2N6043, 2N6042, 2N6045 All Types − VCE(sat) Vdc Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) VBE(sat) − 4.5 Vdc Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.8 Vdc |hfe| 4.0 − Cob − − 300 200 pF hfe 300 − − DYNAMIC CHARACTERISTICS Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6040/2N6042 2N6043/2N6045 Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Indicates JEDEC Registered Data. http://onsemi.com 2 PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045 PD, POWER DISSIPATION (WATTS) TA TC 4.0 80 3.0 60 TC 2.0 40 TA 1.0 20 0 0 0 20 40 60 80 100 T, TEMPERATURE (°C) 120 140 160 Figure 1. Power Derating 5.0 RC SCOPE TUT V2 approx +8.0 V RB 51 0 V1 approx -12 V D1 ≈ 8.0 k ≈120 +4.0 V 25 ms for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities and D1. tr, tf ≤ 10 ns DUTY CYCLE = 1.0% ts 2.0 t, TIME (s) μ RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA 3.0 VCC -30 V 0.7 0.5 0.3 0.2 VCC = 30 V IC/IB = 250 IB1 = IB2 0.1 TJ = 25°C PNP 0.07 td @ VBE(off) = 0 V NPN 0.05 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Times Equivalent Circuit 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.02 0.05 0.02 SINGLE PULSE 0.01 0.01 0.02 0.03 0.01 0.05 5.0 7.0 10 P(pk) qJC(t) = r(t) qJC qJC = 1.67°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.1 0.03 tr Figure 3. Switching Times 0.2 0.1 0.07 0.05 tf 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) Figure 4. Thermal Response http://onsemi.com 3 20 30 50 100 200 300 500 1000 PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150°C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms IC, COLLECTOR CURRENT (AMP) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 500 ms 1.0ms dc 5.0ms TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 2N6040, 2N6043 2N6045 0.02 1.0 70 100 5.0 7.0 10 20 30 2.0 3.0 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active−Region Safe Operating Area 300 TJ = 25°C 5000 3000 2000 200 C, CAPACITANCE (pF) hfe, SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25°C VCE = 4.0 Vdc IC = 3.0 Adc 100 50 30 20 2.0 5.0 Cib 70 50 PNP NPN 10 1.0 Cob 100 PNP NPN 10 20 50 100 f, FREQUENCY (kHz) 100 30 0.1 500 1000 200 20 0.5 1.0 2.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) 0.2 Figure 7. Capacitance Figure 6. Small−Signal Current Gain PNP 2N6040, 2N6042 NPN 2N6043, 2N6045 20,000 20,000 1000 700 500 300 200 0.1 10,000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 3000 2000 VCE = 4.0 V VCE = 4.0 V 10,000 7000 5000 50 TJ = 150°C 25°C -55°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 7000 5000 TJ = 150°C 3000 2000 25°C 1000 700 500 -55°C 300 200 0.1 10 Figure 8. DC Current Gain http://onsemi.com 4 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045 3.0 TJ = 25°C 2.6 IC = 2.0 A 6.0 A 4.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 30 20 3.0 TJ = 25°C 2.6 IC = 2.0 A 6.0 A 4.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 7.0 10 Figure 9. Collector Saturation Region 3.0 3.0 TJ = 25°C TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2.0 1.5 VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 1.0 2.0 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 0.5 7.010 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages ORDERING INFORMATION Device Package Shipping 2N6040G TO−220 (Pb−Free) 50 Units / Rail 2N6042G TO−220 (Pb−Free) 50 Units / Rail 2N6043G TO−220 (Pb−Free) 50 Units / Rail 2N6045G TO−220 (Pb−Free) 50 Units / Rail http://onsemi.com 5 5.0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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