2N6071B

2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features http://onsemi.com TRIACS 4.0 A RMS, 200 − 600 V • Sensitive Gate Triggering Uniquely Compatible for Direct Coupling • • • • • to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions Gate Triggering: 4 Mode − 2N6071A, B; 2N6073A, B; 2N6075A, B Blocking Voltages to 600 V All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Device Marking: Device Type, e.g., 2N6071A, Date Code MT2 G MT1 REAR VIEW SHOW TAB 3 TO−225 CASE 077 STYLE 5 21 MARKING DIAGRAM YWW 2N 607xyG = 1, 3, 5 = A, B = Year = Work Week = Pb−Free Package 1. Cathode 2. Anode 3. Gate x y Y WW G ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 April, 2006 − Rev. 7 Publication Order Number: 2N6071/D 2N6071A/B Series MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating *Peak Repetitive Off-State Voltage (Note 1) (TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6071A,B 2N6073A,B 2N6075A,B *On-State RMS Current (TC = 85°C) Full Cycle Sine Wave 50 to 60 Hz *Peak Non−repetitive Surge Current (One Full cycle, 60 Hz, TJ = +110°C) Circuit Fusing Considerations (t = 8.3 ms) *Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 85°C) *Average Gate Power (t = 8.3 ms, TC = 85°C) *Peak Gate Voltage (Pulse Width ≤ 1.0 ms, TC = 85°C) *Operating Junction Temperature Range *Storage Temperature Range Mounting Torque (6-32 Screw) (Note 2) Symbol VDRM, VRRM 200 400 600 IT(RMS) ITSM I2t PGM PG(AV) VGM TJ Tstg − 4.0 30 3.7 10 0.5 5.0 −40 to +110 −40 to +150 8.0 A A A2s W W V °C °C in. lb. Value Unit V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common. THERMAL CHARACTERISTICS Characteristic *Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds *Indicates JEDEC Registered Data. Symbol RqJC RqJA TL Max 3.5 75 260 Unit °C/W °C/W °C http://onsemi.com 2 2N6071A/B Series ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS *Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS *Peak On-State Voltage (Note 3) (ITM = "6.0 A Peak) *Gate Trigger Voltage (Continuous DC), All Quadrants (Main Terminal Voltage = 12 Vdc, RL = 100 W, TJ = −40°C) Gate Non−Trigger Voltage, All Quadrants (Main Terminal Voltage = 12 Vdc, RL = 100 W, TJ = 110°C) *Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "1 Adc) TJ = −40°C TJ = 25°C Turn-On Time (ITM = 14 Adc, IGT = 100 mAdc) VTM VGT − VGD 0.2 IH − − tgt − − − 1.5 30 15 − ms − − mA 1.4 2.5 V − − 2 V V TJ = 25°C TJ = 110°C IDRM, IRRM − − − − 10 2 mA mA Symbol Min Typ Max Unit QUADRANT (Maximum Value) Type Gate Trigger Current (Continuous DC) (Main Terminal Voltage = 12 Vdc, RL = 100 W) 2N6071A 2N6073A 2N6075A 2N6071B 2N6073B 2N6075B DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage @ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, Exponential Waveform, Commutating di/dt = 2.0 A/ms 3. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. *Indicates JEDEC Registered Data. dv/dt(c) − 5 − V/ms IGT @ TJ +25°C −40°C +25°C −40°C I mA 5 20 3 15 II mA 5 20 3 15 III mA 5 20 3 15 IV mA 10 30 5 20 SAMPLE APPLICATION: TTL-SENSITIVE GATE 4 AMPERE TRIAC TRIGGERS IN MODES II AND III 14 MC7400 4 7 VEE = 5.0 V + 510 W 2N6071A LOAD 115 VAC 60 Hz 0V −VEE Trigger devices are recommended for gating on Triacs. They provide: 1. Consistent predictable turn-on points. 2. Simplified circuitry. 3. Fast turn-on time for cooler, more efficient and reliable operation. http://onsemi.com 3 2N6071A/B Series Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 − IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT − (−) MT2 (−) MT2 + IGT Quadrant III (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. SENSITIVE GATE LOGIC REFERENCE IC Logic Functions TTL HTL CMOS (NAND) CMOS (Buffer) Operational Amplifier Zero Voltage Switch 2N6071A Series 2N6071A Series 2N6071A Series 2N6071B Series 2N6071B Series 2N6071B Series 2N6071A Series Firing Quadrant I II 2N6071A Series 2N6071A Series III 2N6071A Series 2N6071A Series IV 2N6071B Series http://onsemi.com 4 2N6071A/B Series 110 TC , CASE TEMPERATURE (° C) TC , CASE TEMPERATURE (° C) 110 α = 30° 60° 90° 100 α = 30° 90 60° 100 90° 120° 90 120° 180° 180° dc 80 a α α = CONDUCTION ANGLE 0 1.0 2.0 3.0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 4.0 80 a 70 a dc 70 α = CONDUCTION ANGLE 0 1.0 2.0 3.0 IT(RMS), RMS ON-STATE CURRENT (AMP) 4.0 Figure 1. Average Current Derating 8.0 a P(AV) , AVERAGE POWER (WATTS) 6.0 a α = CONDUCTION ANGLE 60° 4.0 α = 30° 90° 180° 120° dc P(AV) , AVERAGE POWER (WATTS) 6.0 a 8.0 Figure 2. RMS Current Derating a α = 180° 120° 4.0 dc α = CONDUCTION ANGLE 2.0 2.0 90° 60° 30° 0 0 3.0 1.0 2.0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 4.0 0 0 1.0 2.0 3.0 IT(RMS), RMS ON-STATE CURRENT (AMP) 4.0 Figure 3. Power Dissipation V GT , GATE TRIGGER VOLTAGE (NORMALIZED) 3.0 2.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES I GT , GATE TRIGGER CURRENT (NORMALIZED) 3.0 2.0 Figure 4. Power Dissipation OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.0 0.7 0.5 1.0 0.7 0.5 0.3 −60 −40 −20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 0.3 −60 −40 −20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 Figure 5. Typical Gate−Trigger Voltage Figure 6. Typical Gate−Trigger Current http://onsemi.com 5 2N6071A/B Series 40 30 20 IH, HOLDING CURRENT (NORMALIZED) 3.0 2.0 GATE OPEN APPLIES TO EITHER DIRECTION 1.0 0.7 0.5 10 7.0 ITM , ON-STATE CURRENT (AMP) 5.0 TJ = 110°C 0.3 −60 −40 −20 0 20 40 60 80 100 120 140 3.0 2.0 TJ, JUNCTION TEMPERATURE (°C) Figure 8. Typical Holding Current TJ = 25°C 34 PEAK SINE WAVE CURRENT (AMP) 32 30 28 26 24 22 20 18 16 14 1.0 2.0 3.0 4.0 5.0 7.0 10 TJ = −40 to +110°C f = 60 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0 1.0 2.0 3.0 4.0 5.0 VTM, ON-STATE VOLTAGE (VOLTS) NUMBER OF FULL CYCLES Figure 7. Maximum On−State Characteristics Z θJC(t), TRANSIENT THERMAL IMPEDANCE °C/W) ( 10 5.0 3.0 2.0 Figure 9. Maximum Allowable Surge Current MAXIMUM TYPICAL 1.0 0.5 0.3 0.2 0.1 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 10. Thermal Response http://onsemi.com 6 2N6071A/B Series ORDERING INFORMATION Device 2N6071A 2N6071AG 2N6071B 2N6071BG 2N6071BT 2N6071BTG 2N6073A 2N6073AG 2N6073B 2N6073BG 2N6075A 2N6075AG 2N6075B 2N6075BG Package TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) TO−225 TO−225 (Pb−Free) 500 Units / Box Shipping † †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 2N6071A/B Series PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U Q −A− 123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− F M C H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M DIM A B C D F G H J K M Q R S U V STYLE 5: PIN 1. MT 1 2. MT 2 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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