2N6076
PNP Small Signal Transistor
Features
• BVceo .....25V(Min)
• hFE ...... 100(Min) @ Vce=10V, Ic=10mA
• Pb free
Absolute Maximum Ratings
Symbol
Ta = 25°C unless otherwise noted
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-25
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
IC
Collector Current
TJ
Junction Temperature
TSTG
Storage Temperature Range
-5
V
500
mA
150
qC
-55 ~ 150
qC
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* T =25qC unless otherwise noted
a
Symbol
Parameter
Max
Unit
PC
Collector Power Dissipation, by RTJA
625
mW
RTJA
Thermal Resistance, Junction to Ambient
200
qC/W
* 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150 degrees C.
4. Minimum land pad.
Electrical Characteristics* Ta=25qC unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Unit
BVCBO
Collector-Base Breakdown Voltage
IC = -100PA, IE = 0
-25
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = -10mA, IB = 0
-25
V
BVEBO
Emitter-Base Breakdown Voltage
IE = -10PA, IC = 0
-5
ICBO
Collector Cut-off Current
VCE = -25V
VCE = -25V, T=+100qC
ICES
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE
DC Current Gain
VCE = 1V, IC = -10mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC = -10mA, IB = -1mA
-0.25
V
VBE (sat)
Base-Emitter Saturation Voltage
IC = -10mA, IB = -1mA
-0.80
V
VBE (on)
Base-Emitter On Voltage
VCE = -10V, IC = -10mA
-0.5
-1.2
V
Ccb
Output Capacitance
VCB = -10V, f = 1MHz
1
13
pF
hfe
Small Signal Current Gain
VCE= -10V, IC = 10mA, f = 1kHz
100
750
V
-100
10
nA
uA
VCE = -25V
-100
nA
VCE = -3V
-100
nA
100
500
* DC Item are tested by Pulse Test : Pulse Widthd300us, Duty Cycled2%
© 2007 Fairchild Semiconductor Corporation
2N6076 Rev. 1.0.0
www.fairchildsemi.com
1
2N6076 — PNP Small Signal Transistor
July 2008
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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Full Production
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the right to make changes at any time without notice to improve design.
Obsolete
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
© 2007 Fairchild Semiconductor Corporation
2N6076 Rev. 1.0.0
www.fairchildsemi.com
2
2N6076 PNP Small Signal Transistor
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