2N6284_08

2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features http://onsemi.com • High DC Current Gain @ IC = 10 Adc − • • • hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) Monolithic Construction with Built−In Base−Emitter Shunt Resistors Pb−Free Packages are Available* 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS COLLECTOR CASE BASE 1 MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage 2N6286 2N6284/87 2N6286 2N6284/87 Symbol VCEO Value 80 100 80 100 5.0 20 40 0.5 160 0.915 − 65 to + 200 Unit Vdc EMITTER 2 MARKING DIAGRAM Vdc 1 2N628xG AYYWW MEX Collector−Base Voltage VCB Emitter−Base Voltage Collector Current − Continuous Peak Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range VEB IC IB PD TJ, Tstg Vdc Adc Adc W W/°C °C 2 TO−204AA (TO−3) CASE 1−07 STYLE 1 2N628x G A YY WW MEX THERMAL CHARACTERISTICS (Note 1) Characteristic Thermal Resistance, Junction−to−Case Symbol RqJC Max 1.09 Unit °C/W = Device Code x = 4, 6 or 7 = Pb−Free Package = Location Code = Year = Work Week = Country of Orgin Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. ORDERING INFORMATION Device 2N6284 2N6284G 2N6286 2N6286G 2N6287 Package TO−3 TO−3 (Pb−Free) TO−3 TO−3 (Pb−Free) TO−3 TO−3 (Pb−Free) Shipping 100 Units/Tray 100 Units/Tray 100 Units/Tray 100 Units/Tray 100 Units/Tray 100 Units/Tray *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 2N6287G September, 2008 − Rev. 4 1 Publication Order Number: 2N6284/D ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2. Indicates JEDEC Registered Data. 3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2% DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 3) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Magnitude of Common Emitter Small−Signal Short−Circuit Forward Current Transfer Ratio (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Base−Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) Base−Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc) Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 40 mAdc) (IC = 20 Adc, IB = 200 mAdc) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) (IC = 20 Adc, VCE = 3.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) Collector−Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0) Characteristic PD, POWER DISSIPATION (WATTS) 100 120 140 160 20 40 60 80 2N6284 (NPN); 2N6286, 2N6287 (PNP) 0 0 25 Figure 1. Power Derating 75 150 50 100 125 TC, CASE TEMPERATURE (°C) http://onsemi.com 2N6286 2N6284, 2N6287 2N6284 2N6286, 2N6287 VCEO(sus) 175 Symbol VCE(sat) VBE(sat) VBE(on) ICEO IEBO ICEX |hfe| Cob hFE hfe 200 Min 300 750 100 100 4.0 2 80 − − − − − − − − − − − 18,000 − Max 400 600 4.0 2.8 2.0 3.0 2.0 0.5 5.0 1.0 1.0 − − − − mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc pF − − 2N6284 (NPN); 2N6286, 2N6287 (PNP) RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE e.g., 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA V2 APPROX VCC - 30 V RC TUT SCOPE RB 51 D1 [ 8.0 k [ 50 + 8.0 V 0 V1 APPROX - 12 V 25 ms tr, tf v 10 ns DUTY CYCLE = 1.0% + 4.0 V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES Figure 2. Switching Times Test Circuit 10 7.0 5.0 3.0 t, TIME ( μs) 2.0 ts 2N6284 (NPN) 2N6287 (PNP) tf 1.0 0.7 0.5 tr 0.3 VCC = 30 Vdc I /I = 250 0.2 C B IB1 = IB2 td @ VBE(off) = 0 V T = 25°C 0.1 J 0.5 0.7 1.0 2.0 3.0 0.2 0.3 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 Figure 3. Switching Times r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE RqJC(t) = r(t) RqJC RqJC = 1.09°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 0.01 0.01 0.02 0.03 0.05 0.1 Figure 4. Thermal Response http://onsemi.com 3 2N6284 (NPN); 2N6286, 2N6287 (PNP) ACTIVE−REGION SAFE OPERATING AREA 50 0.1 ms IC, COLLECTOR CURRENT (AMP) 20 10 5.0 5.0 ms 2.0 1.0 0.5 0.2 0.1 0.05 2.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25°C SINGLE PULSE 0.5 ms 1.0 ms dc TJ = 200°C 5.0 10 20 50 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. 2N6284, 2N6287 10,000 hFE, SMALL-SIGNAL CURRENT GAIN 5000 2000 1000 500 200 100 50 20 10 1.0 2.0 2N6284 (NPN) 2N6287 (PNP) 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 TJ = 25°C VCE = 3.0 Vdc IC = 10 A Figure 6. Small−Signal Current Gain 1000 TJ = 25°C 700 C, CAPACITANCE (PF) 500 Cib Cob 2N6284 (NPN) 2N6287 (PNP) 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 300 200 Figure 7. Capacitance http://onsemi.com 4 2N6284 (NPN); 2N6286, 2N6287 (PNP) NPN 2N6284 20,000 VCE = 3.0 V 10,000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500 300 200 TJ = 150°C 10,000 7000 5000 3000 2000 1000 700 500 300 0.2 0.3 - 55°C 30,000 20,000 PNP 2N6287 VCE = 3.0 V TJ = 150°C 25°C - 55°C 25°C 0.2 0.3 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 Figure 8. DC Current Gain VCE , COLLECTOR‐EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25°C 2.6 IC = 5.0 A 10 A 15 A VCE , COLLECTOR‐EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25°C 2.6 IC = 5.0 A 2.2 10 A 15 A 2.2 1.8 1.8 1.4 1.4 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 Figure 9. Collector Saturation Region 3.0 TJ = 25°C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 3.0 TJ = 25°C 2.5 2.0 VBE(sat) @ IC/IB = 250 2.0 1.5 1.5 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V VCE(sat) @ IC/IB = 250 1.0 VBE @ VCE = 3.0 V VCE(sat) @ IC/IB = 250 1.0 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages http://onsemi.com 5 2N6284 (NPN); 2N6286, 2N6287 (PNP) NPN 2N6284 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) + 5.0 + 4.0 + 3.0 + 2.0 + 1.0 0 - 1.0 - 2.0 - 3.0 - 4.0 - 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 qVB for VBE *qVC for VCE(sat) 25°C to + 150°C - 55°C to + 25°C 5.0 7.0 10 20 - 55°C to + 25°C *APPLIES FOR IC/IB ≤ hFE @ VCE + 3.0 V 250 25°C to 150°C + 5.0 + 4.0 + 3.0 + 2.0 + 1.0 0 - 1.0 - 2.0 - 3.0 - 4.0 - 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 qVB for VBE *qVC for VCE(sat) 25°C to + 150°C - 55°C to + 25°C 5.0 7.0 10 20 *APPLIES FOR IC/IB ≤ hFE @ VCE + 3.0 V 250 25°C to 150°C - 55°C to + 25°C PNP 2N6287 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 11. Temperature Coefficients 105 IC, COLLECTOR CURRENT ( μA) IC, COLLECTOR CURRENT ( μA) 104 103 TJ = 150°C 102 101 REVERSE 100 25°C 10-1 - 0.6 - 0.4 - 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4 FORWARD 100°C VCE = 30 V 103 102 101 100 10-1 REVERSE 10-2 10-3 + 0.6 + 0.4 25°C FORWARD 100°C VCE = 30 V TJ = 150°C + 0.2 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 1.2 - 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut−Off Region NPN 2N6284 COLLECTOR PNP 2N6287 COLLECTOR BASE BASE [ 8.0 k [ 60 [ 8.0 k [ 60 EMITTER EMITTER Figure 13. Darlington Schematic http://onsemi.com 6 2N6284 (NPN); 2N6286, 2N6287 (PNP) PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z A N C E D 2 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 −T− K M SEATING PLANE 0.13 (0.005) U 2 TQ M Y M V H L G −Y− B 1 −Q− 0.13 (0.005) DIM A B C D E G H K L N Q U V M TY M STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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