2N6284 (NPN); 2N6286,
2N6287 (PNP)
Preferred Device
Darlington Complementary
Silicon Power Transistors
These packages are designed for general−purpose amplifier and
low−frequency switching applications.
Features
• High DC Current Gain @ IC = 10 Adc −
•
•
•
hFE = 2400 (Typ) − 2N6284
= 4000 (Typ) − 2N6287
Collector−Emitter Sustaining Voltage −
VCEO(sus) = 100 Vdc (Min)
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
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20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
100 VOLTS, 160 WATTS
COLLECTOR
CASE
BASE
1
MAXIMUM RATINGS (Note 1)
Symbol
Rating
Collector−Emitter Voltage
Collector−Base Voltage
2N6286
2N6284/87
2N6286
2N6284/87
Emitter−Base Voltage
VCEO
VCB
Value
Unit
EMITTER 2
Vdc
80
100
MARKING DIAGRAM
Vdc
80
100
VEB
5.0
Vdc
Collector Current − Continuous
Peak
IC
20
40
Adc
Base Current
IB
0.5
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
160
0.915
W
W/°C
Operating and Storage Temperature
Range
TJ, Tstg
−65 to + 200
°C
2
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.09
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
2N628x
G
A
YY
WW
MEX
Device
2N6284
2N6286
2N6286G
2N6287
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 4
1
= Device Code
x = 4, 6 or 7
= Pb−Free Package
= Location Code
= Year
= Work Week
= Country of Orgin
ORDERING INFORMATION
2N6284G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
2N628xG
AYYWW
MEX
TO−204AA (TO−3)
CASE 1−07
STYLE 1
THERMAL CHARACTERISTICS (Note 1)
Characteristic
1
2N6287G
Package
Shipping
TO−3
100 Units/Tray
TO−3
(Pb−Free)
100 Units/Tray
TO−3
100 Units/Tray
TO−3
(Pb−Free)
100 Units/Tray
TO−3
100 Units/Tray
TO−3
(Pb−Free)
100 Units/Tray
Publication Order Number:
2N6284/D
2N6284 (NPN); 2N6286, 2N6287 (PNP)
PD, POWER DISSIPATION (WATTS)
160
140
120
100
80
60
40
20
0
0
25
75
150
50
100
125
TC, CASE TEMPERATURE (°C)
200
175
Figure 1. Power Derating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
80
100
−
−
−
−
1.0
1.0
−
−
0.5
5.0
−
2.0
750
100
18,000
−
−
−
2.0
3.0
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 0.1 Adc, IB = 0)
2N6286
2N6284, 2N6287
VCEO(sus)
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
ICEO
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc)
(IC = 20 Adc, VCE = 3.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 40 mAdc)
(IC = 20 Adc, IB = 200 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = 10 Adc, VCE = 3.0 Vdc)
VBE(on)
−
2.8
Vdc
Base−Emitter Saturation Voltage
(IC = 20 Adc, IB = 200 mAdc)
VBE(sat)
−
4.0
Vdc
|hfe|
4.0
−
MHz
−
−
400
600
300
−
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small−Signal Short−Circuit
Forward Current Transfer Ratio
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6284
2N6286, 2N6287
Small−Signal Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
Cob
hfe
2. Indicates JEDEC Registered Data.
3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2%
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2
pF
−
2N6284 (NPN); 2N6286, 2N6287 (PNP)
VCC
- 30 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
RC
SCOPE
TUT
RB
V2
APPROX
+ 8.0 V
0
V1
APPROX
- 12 V
D1
51
25 ms
tr, tf v 10 ns
DUTY CYCLE = 1.0%
[ 8.0 k
[ 50
+ 4.0 V
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
Figure 2. Switching Times Test Circuit
10
7.0
5.0
ts
2N6284 (NPN)
2N6287 (PNP)
t, TIME (s)
μ
3.0
2.0
tf
tr
1.0
0.7
0.5
0.3 VCC = 30 Vdc
I /I = 250
0.2 C B
IB1 = IB2
td @ VBE(off) = 0 V
T = 25°C
0.1 J
0.5 0.7 1.0
2.0 3.0
0.2 0.3
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
20
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
Figure 3. Switching Times
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.07
0.1
0.02
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
0.05
0.03
0.01
0.02
SINGLE PULSE
0.01
0.01
P(pk)
RqJC(t) = r(t) RqJC
RqJC = 1.09°C/W MAX
0.05
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
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3
20
30
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200 300
500
1000
2N6284 (NPN); 2N6286, 2N6287 (PNP)
ACTIVE−REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e. the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) < 200_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
50
20
0.5 ms
10
1.0 ms
5.0
5.0 ms
dc
2.0
1.0
TJ = 200°C
0.5
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
0.2
0.1
0.05
2.0
5.0
10
20
50
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6284, 2N6287
hFE, SMALL-SIGNAL CURRENT GAIN
10,000
TJ = 25°C
VCE = 3.0 Vdc
IC = 10 A
5000
2000
1000
500
200
100
50
2N6284 (NPN)
2N6287 (PNP)
20
10
1.0
2.0
5.0 10
20
50 100
f, FREQUENCY (kHz)
200
500 1000
Figure 6. Small−Signal Current Gain
1000
TJ = 25°C
700
C, CAPACITANCE (PF)
IC, COLLECTOR CURRENT (AMP)
0.1 ms
500
300
Cib
Cob
200
2N6284 (NPN)
2N6287 (PNP)
100
0.1 0.2
0.5
1.0 2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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4
50
100
2N6284 (NPN); 2N6286, 2N6287 (PNP)
NPN
2N6284
PNP
2N6287
VCE = 3.0 V
30,000
20,000
TJ = 150°C
10,000
20,000
VCE = 3.0 V
7000
5000
3000
2000
1000
700
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
10,000
25°C
-55°C
500
300
200
5.0 7.0 10
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
TJ = 150°C
7000
5000
25°C
3000
2000
-55°C
1000
700
500
300
0.2 0.3
20
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
20
VCE , COLLECTOR‐EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR‐EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
3.0
TJ = 25°C
2.6
IC = 5.0 A
10 A
15 A
2.2
1.8
1.4
1.0
0.5 0.7 1.0
20
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
30
50
3.0
TJ = 25°C
2.6
IC = 5.0 A
15 A
10 A
2.2
1.8
1.4
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
50
Figure 9. Collector Saturation Region
3.0
3.0
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
TJ = 25°C
2.0
1.5
1.0
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
2.5
2.0
1.5
VBE(sat) @ IC/IB = 250
1.0
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
0.5
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
VCE(sat) @ IC/IB = 250
0.5
20
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
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5
20
2N6284 (NPN); 2N6286, 2N6287 (PNP)
PNP
2N6287
+5.0
+4.0
+3.0
*APPLIES FOR IC/IB ≤
θV, TEMPERATURE COEFFICIENTS (mV/°C)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
NPN
2N6284
hFE@VCE + 3.0V
250
+2.0
25°C to 150°C
+1.0
-55°C to + 25°C
0
-1.0
*qVC for VCE(sat)
-2.0
-3.0
25°C to + 150°C
qVB for VBE
-55°C to + 25°C
-4.0
-5.0
0.2 0.3
0.7 1.0
0.5
2.0 3.0
5.0 7.0 10
+5.0
+4.0
*APPLIES FOR IC/IB ≤
+3.0
+2.0
25°C to 150°C
+1.0
-55°C to + 25°C
0
-1.0
*qVC for VCE(sat)
-2.0
-3.0
25°C to + 150°C
qVB for VBE
-4.0
-55°C to + 25°C
-5.0
0.2 0.3
20
hFE@VCE + 3.0V
250
0.5
IC, COLLECTOR CURRENT (AMP)
0.7 1.0
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
104
103
VCE = 30 V
IC, COLLECTOR CURRENT (A)
μ
IC, COLLECTOR CURRENT (A)
μ
105
103
TJ = 150°C
102
100°C
101
REVERSE
FORWARD
100
VCE = 30 V
102
TJ = 150°C
101
100°C
100
10-1
REVERSE
10-2
FORWARD
25°C
25°C
10-1
-0.6 -0.4
-0.2
0
+0.2 +0.4 +0.6 +0.8
10-3
+0.6 +0.4
+1.0 +1.2 + 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
+0.2
0
-0.2 -0.4
-0.6 -0.8
-1.0 -1.2 -1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
COLLECTOR
COLLECTOR
NPN
2N6284
PNP
2N6287
BASE
BASE
[ 8.0 k
[ 60
[ 8.0 k
EMITTER
[ 60
EMITTER
Figure 13. Darlington Schematic
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
DATE 05/18/1988
SCALE 1:1
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
C
−T−
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
STYLE 2:
PIN 1. BASE
2. COLLECTOR
CASE: EMITTER
STYLE 3:
PIN 1. GATE
2. SOURCE
CASE: DRAIN
STYLE 4:
PIN 1. GROUND
2. INPUT
CASE: OUTPUT
STYLE 6:
PIN 1. GATE
2. EMITTER
CASE: COLLECTOR
STYLE 7:
PIN 1. ANODE
2. OPEN
CASE: CATHODE
STYLE 8:
PIN 1. CATHODE #1
2. CATHODE #2
CASE: ANODE
STYLE 9:
PIN 1. ANODE #1
2. ANODE #2
CASE: CATHODE
STYLE 5:
PIN 1. CATHODE
2. EXTERNAL TRIP/DELAY
CASE: ANODE
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
© Semiconductor Components Industries, LLC, 2000
January, 2000 − Rev. 07Z
1
Case Outline Number:
1
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Email Requests to: orderlit@onsemi.com
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TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
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