2N6397

2N6394 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features • Glass Passivated Junctions with Center Gate Geometry for Greater • • • Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 V Pb−Free Packages are Available* http://onsemi.com SCRs 12 AMPERES RMS 50 thru 800 VOLTS G A Unit V K MAXIMUM RATINGS † (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 On-State RMS Current (180° Conduction Angles; TC = 90°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 90°C) Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 90°C) Forward Average Gate Power (t = 8.3 ms, TC = 90°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 90°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 100 400 800 IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 12 100 40 20 0.5 2.0 −40 to +125 −40 to +150 A A A2s W W A °C °C 1 2 3 Value MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 3 2N639xG AYWW 2N639x = Device Code x = 4, 5, 7, or 9 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MAXIMUM RATINGS † (TJ = 25°C unless otherwise noted) Rating Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol RqJC TL Max 2.0 260 Unit °C/W °C 1 2 3 4 PIN ASSIGNMENT Cathode Anode Gate Anode †Indicates JEDEC Registered Data Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1 August, 2006 − Rev. 6 Publication Order Number: 2N6394/D 2N6394 Series ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS †Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) ON CHARACTERISTICS †Peak Forward On−State Voltage (Note 2) (ITM = 24 A Peak) †Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) † Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 Ohms, TJ = 125°C) † Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) Turn-On Time (ITM = 12 A, IGT = 40 mAdc, VD = Rated VDRM) Turn-Off Time (VD = Rated VDRM) DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of Off-State Voltage Exponential (VD = Rated VDRM, TJ = 125°C) †Indicates JEDEC Registered Data 2. Pulse Test: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%. dv/dt − 50 − V/ms (ITM = 12 A, IR = 12 A) (ITM = 12 A, IR = 12 A, TJ = 125°C) VTM IGT VGT VGD IH tgt tq − − − 0.2 − − − − 1.7 5.0 0.7 − 6.0 1.0 15 35 2.2 30 1.5 − 50 2.0 − − V mA V V mA ms ms TJ = 25°C TJ = 125°C IDRM, IRRM − − − − 10 2.0 mA mA Symbol Min Typ Max Unit Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode − + Voltage IDRM at VDRM Forward Blocking Region (off state) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) ° 130 125 120 115 110 105 100 95 90 0 α = 3 0° 60° 90° 180° 8.0 dc α α = CONDUCTION ANGLE P(AV) , AVERAGE POWER (WATTS) 20 18 16 α 14 α = CONDUCTION ANGLE 12 10 α = 30° 60° 180° 90° dc 8.0 6.0 4.0 2.0 0 TJ ≈ 125°C 7.0 1.0 2.0 3.0 4.0 5.0 6.0 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 8.0 Figure 1. Current Derating Figure 2. Maximum On−State Power Dissipation http://onsemi.com 2 2N6394 Series 100 70 50 30 iTM , INSTANTANEOUS ON−STATE CURRENT (AMPS) 20 TJ = 25°C 125°C 10 7.0 5.0 3.0 2.0 100 I TSM , PEAK SURGE CURRENT (AMP) 95 90 85 80 75 70 65 60 55 50 1.0 TJ = 125°C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 2.0 3.0 4.0 NUMBER OF CYCLES 6.0 8.0 10 1 CYCLE 1.0 0.7 0.5 0.3 0.2 0.1 0.4 1.2 2.0 2.8 3.6 4.4 5.2 vTH, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) 6.0 Figure 3. On−State Characteristics Figure 4. Maximum Non−Repetitive Surge Current 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 t, TIME (ms) 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 ZqJC(t) = RqJC • r(t) Figure 5. Thermal Response http://onsemi.com 3 2N6394 Series TYPICAL CHARACTERISTICS 300 200 IGTM , PEAK GATE CURRENT (mA) 100 70 50 30 20 TJ = −40°C 25°C 100°C 0.2 0.5 1.0 2.0 5.0 10 20 PULSE WIDTH (ms) 50 100 200 I GT, GATE TRIGGER CURRENT (NORMALIZED) 3.0 OFF-STATE VOLTAGE = 12 V 2.0 OFF-STATE VOLTAGE = 12 V 1.0 0.7 0.5 10 7.0 5.0 3.0 0.3 −40 −20 0 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C) 140 160 Figure 6. Typical Gate Trigger Current versus Pulse Width 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 −60 −40 3.0 −20 0 20 40 60 80 100 120 140 OFF-STATE VOLTAGE = 12 V IH , HOLDING CURRENT (mA) 30 Figure 7. Typical Gate Trigger Current versus Temperature VGT, GATE TRIGGER VOLTAGE (VOLTS) OFF-STATE VOLTAGE = 12 V 20 10 7.0 5.0 −60 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 8. Typical Gate Trigger Voltage versus Temperature Figure 9. Typical Holding Current versus Temperature ORDERING INFORMATION Device 2N6394 2N6394G 2N6395 2N6395G 2N6397 2N6397G 2N6399 2N6399G Package TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) Shipping ** 500 Units / Bulk 500 Units / Bulk 500 Units / Bulk 500 Units / Bulk 500 Units / Bulk 500 Units / Bulk 500 Units / Bulk 500 Units / Bulk **For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 2N6394 Series PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AD −T− B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 Q 123 A U K H Z L V G D N R J STYLE 3: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 2N6394/D