2N6508

2N6504 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features http://onsemi.com • Glass Passivated Junctions with Center Gate Fire for Greater • • • • Parameter Uniformity and Stability Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts 300 A Surge Current Capability Pb−Free Packages are Available* SCRs 25 AMPERES RMS 50 thru 800 VOLTS G A K MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 3 1 2 3 x A Y WW G = 4, 5, 7, 8 or 9 = Assembly Location = Year = Work Week = Pb−Free Device 2N650xG AYWW PIN ASSIGNMENT 1 2 3 4 Cathode Anode Gate Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 February, 2006 − Rev. 7 Publication Order Number: 2N6504/D 2N6504 Series MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating *Peak Repetitive Off−State Voltage (Note 1) (Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125°C) 2N6504 2N6505 2N6507 2N6508 2N6509 On-State Current RMS (180° Conduction Angles; TC = 85°C) Average On-State Current (180° Conduction Angles; TC = 85°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C) Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 85°C) Forward Average Gate Power (t = 8.3 ms, TC = 85°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 85°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 100 400 600 800 IT(RMS) IT(AV) ITSM PGM PG(AV) IGM TJ Tstg 25 16 250 20 0.5 2.0 −40 to +125 −40 to +150 A A A W W A °C °C Value Unit V Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic *Thermal Resistance, Junction−to−Case *Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds Symbol RqJC TL Max 1.5 260 Unit °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS * Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C TJ = 125°C IDRM, IRRM − − − − 10 2.0 mA mA ON CHARACTERISTICS * Forward On−State Voltage (Note 2) (ITM = 50 A) * Gate Trigger Current (Continuous dc) (VAK = 12 Vdc, RL = 100 W) TC = 25°C TC = −40°C VTM IGT VGT VGD IH tgt tq − − 15 35 − − − − − − 0.2 − − − − 9.0 − 1.0 − 18 − 1.5 1.8 30 75 1.5 − 40 80 2.0 V mA V V mA ms ms * Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 W, TC = −40°C) Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 W, TJ = 125°C) * Holding Current TC = 25°C (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = −40°C * Turn-On Time (ITM = 25 A, IGT = 50 mAdc) Turn-Off Time (VDRM = rated voltage) (ITM = 25 A, IR = 25 A) (ITM = 25 A, IR = 25 A, TJ = 125°C) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (Gate Open, Rated VDRM, Exponential Waveform) *Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. dv/dt − 50 − V/ms http://onsemi.com 2 2N6504 Series Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode − + Voltage IDRM at VDRM Forward Blocking Region (off state) TC , MAXIMUM CASE TEMPERATURE ( °C) P(AV) , AVERAGE POWER (WATTS) 13 0 12 0 110 α α = CONDUCTION ANGLE 32 α α = CONDUCTION ANGLE 60° α = 30° 180° 90° dc 24 16 TJ = 125°C 10 0 90 80 α = 30° 60° 90° 180° dc 8.0 0 8.0 12 16 IT(AV), ON-STATE FORWARD CURRENT (AMPS) 4.0 20 0 0 4.0 8.0 12 16 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 20 Figure 1. Average Current Derating Figure 2. Maximum On−State Power Dissipation http://onsemi.com 3 2N6504 Series 100 70 50 30 125°C 20 iF , INSTANTANEOUS FORWARD CURRENT (AMPS) 25°C 10 7.0 5.0 3.0 2.0 300 1.0 0.7 0.5 0.3 0.2 I TSM , PEAK SURGE CURRENT (AMP) 1 CYCLE 275 250 225 TC = 85°C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 2.0 3.0 4.0 6.0 8.0 10 NUMBER OF CYCLES 200 175 1.0 0.1 0 0.4 0.8 1.2 1.6 2.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 2.4 2.8 Figure 3. Typical On−State Characteristics Figure 4. Maximum Non−Repetitive Surge Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 t, TIME (ms) 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k ZqJC(t) = RqJC • r(t) Figure 5. Thermal Response http://onsemi.com 4 2N6504 Series TYPICAL TRIGGER CHARACTERISTICS 100 VGT, GATE TRIGGER VOLTAGE (VOLTS) −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 125 I GT, GATE TRIGGER CURRENT (mA) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 −40 −25 −10 5 20 35 50 65 80 95 110 125 10 1 −40 −25 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Gate Trigger Current versus Junction Temperature Figure 7. Typical Gate Trigger Voltage versus Junction Temperature 100 IH , HOLDING CURRENT (mA) 10 1 −40 −25 −10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 8. Typical Holding Current versus Junction Temperature http://onsemi.com 5 2N6504 Series ORDERING INFORMATION Device 2N6504 2N6504G 2N6505 2N6505G 2N6505T 2N6505TG 2N6507 2N6507G 2N6507T 2N6507TG 2N6508 2N6508G 2N6509 2N6509G 2N6509T 2N6509TG Package TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) 500 Units / Box Shipping http://onsemi.com 6 2N6504 Series PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA B 4 F C T A S −T− SEATING PLANE Q 123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 H K Z L V G D N U R J STYLE 3: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 7 2N6504/D