2N6609

NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters. Features http://onsemi.com • • • • • Pb−Free Packages are Available** High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs 16 A COMPLEMENTARY POWER TRANSISTORS 140 V, 150 W MARKING DIAGRAM MAXIMUM RATINGS (Note 1) Rating Collector − Emitter Voltage Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous − Peak (Note 2) Base Current − Continuous − Peak (Note 2) Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD TJ, Tstg Symbol VCEO VCEX VCBO VEBO IC 16 30 IB 4 15 150 0.855 −65 to +200 W W/°C °C Adc Value 140 160 160 7 Unit Vdc Vdc Vdc Vdc Adc xxxx A YY WW TO−204 CASE 1−07 2Nxxxx MEX AYYWW = 3773 or 6609 = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol RqJC Max 1.17 Unit °C/W **For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2004 1 July, 2004 − Rev. 10 Publication Order Number: 2N3773/D ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î Î Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î ÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î Î Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎ Î Î ÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎ Î Î Î ÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%. 4. Indicates JEDEC Registered Data. SECOND BREAKDOWN CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 3) OFF CHARACTERISTICS (Note 3) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ORDERING INFORMATION 2N6609 2N3773G 2N3773 Second Breakdown Collector Current with Base Forward Biased t = 1 s (non−repetitive), VCE = 100 V, See Figure 12 Small−Signal Current Gain (Note 4) (IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz) Magnitude of Common−Emitter Small−Signal, Short−Circuit, Forward Current Transfer Ratio (IC = 1 A, f = 50 kHz) Base−Emitter On Voltage (Note 4) (IC = 8 Adc, VCE = 4 Vdc) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 800 mAdc) (Note 4) (IC = 16 Adc, IB = 3.2 Adc) DC Current Gain (IC = 8 Adc, VCE = 4 Vdc) (Note 4) (IC = 16 Adc, VCE = 4 Vdc) Emitter Cutoff Current (Note 4) (VBE = 7 Vdc, IC = 0) Collector Cutoff Current (VCB = 140 Vdc, IE = 0) Collector Cutoff Current (Note 4) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (Note 4) (VCE = 120 Vdc, IB = 0) Collector−Emitter Sustaining Voltage (IC = 0.2 Adc, RBE = 100 Ohms) Collector−Emitter Sustaining Voltage (Note 4) (IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms) Collector−Emitter Breakdown Voltage (Note 4) (IC = 0.2 Adc, IB = 0) Device Characteristic NPN 2N3773*, PNP 2N6609 http://onsemi.com TO−204 (Pb−Free) Package TO−204 TO−204 VCEO(sus) VCER(sus) VCEX(sus) Symbol VCE(sat) VBE(on) ICBO ICEO IEBO ICEX |hfe| hFE IS/b hfe 100 Unit / Tray 100 Unit / Tray 100 Unit / Tray Shipping† Min 150 160 140 1.5 40 15 5 — 4 − − − − − − − Max 2.2 1.4 4 2 10 60 − 10 − − − 5 2 − − − mAdc mAdc mAdc mAdc Unit Adc Vdc Vdc Vdc Vdc Vdc − − − 2 NPN 2N3773*, PNP 2N6609 NPN 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 0.3 VCE = 4 V 25°C 150°C 300 200 25°C hFE , DC CURRENT GAIN −55 °C 100 70 50 30 20 10 7.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 20 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 20 VCE = 4 V −55 °C 150°C PNP Figure 1. DC Current Gain Figure 2. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 2.0 1.6 IC = 4 A VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 2.0 1.6 1.2 IC = 8 A 0.8 IC = 4 A IC = 16 A 1.2 IC = 8 A IC = 16 A 0.8 0.4 TC = 25°C 0 0.05 0.07 0.1 0.4 TC = 25°C 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMPS) 2.0 3.0 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMPS) 2.0 3.0 5.0 Figure 3. Collector Saturation Region Figure 4. Collector Saturation Region 2.0 IC/IB = 10 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.0 IC/IB = 10 1.6 1.2 VBE(sat) 25°C 150°C 150°C VCE(sat) 2.0 3.0 25°C 5.0 7.0 10 20 1.2 VBE(sat) 25°C 150°C 150°C 25°C VCE(sat) 0.8 0.8 0.4 0 0.2 0.3 0.4 0.5 0.7 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. “On” Voltage Figure 6. “On” Voltage http://onsemi.com 3 NPN 2N3773*, PNP 2N6609 30 20 IC, COLLECTOR CURRENT (AMP) 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C, SINGLE PULSE SECOND BREAKDOWN LIMIT 500 ms dc 10 ms 40 ms 100 ms 200 ms 1.0 ms 100 ms 0.05 0.03 3.0 200 300 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 POWER DERATING FACTOR (%) 80 60 THERMAL DERATING 40 20 0 0 40 80 120 TC, CASE TEMPERATURE (°C) 160 200 Figure 8. Power Derating http://onsemi.com 4 NPN 2N3773*, PNP 2N6609 PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC −−− 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF −−− 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC −−− 21.08 3.84 4.19 30.15 BSC 3.33 4.77 A N C −T− E D U V 2 2 PL SEATING PLANE K M 0.13 (0.005) L G 1 TQ M Y M −Y− H B −Q− 0.13 (0.005) M TY M STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 5 NPN 2N3773*, PNP 2N6609 PowerBase is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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