2N6667

2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − • • • • • • hFE = 3500 (Typ) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80 Vdc (Min) − 2N6668 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc Monolithic Construction with Built−In Base−Emitter Shunt Resistors TO−220AB Compact Package Complementary to 2N6387, 2N6388 Pb−Free Packages are Available* http://onsemi.com PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W MARKING DIAGRAM 4 COLLECTOR 1 2 3 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 2N666x AYWWG BASE CASE 221A−09 TO−220AB x A Y WW G = 7 or 8 = Assembly Location = Year = Work Week = Pb−Free Package ≈8k ≈ 120 EMITTER Figure 1. Darlington Schematic ORDERING INFORMATION Device 2N6667 2N6667G Package TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) Shipping 50 Units/Rail 50 Units/Rail 2N6668 2N6668G 50 Units/Rail 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 1 June, 2005 − Rev. 5 Publication Order Number: 2N6667/D ÎÎ Î ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ ÎÎÎ Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎ Î ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ Î ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎÎ Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î Î ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. ELECTRICAL CHARACTERISTICS (Note 1) (TC = 25_C unless otherwise noted) THERMAL CHARACTERISTICS MAXIMUM RATINGS (Note 1) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 1) OFF CHARACTERISTICS Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Device Dissipation @ TA = 25_C Derate above 25_C Total Device Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current − Continuous − Peak Emitter−Base Voltage Collector−Base Voltage Collector−Emitter Voltage Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) Base−Emitter Saturation Voltage(IC = 5.0 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc) Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc) DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) (IC = 10 Adc, VCE = 3.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) Collector−Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) Rating Characteristic Characteristic 2N6667, 2N6668 http://onsemi.com 2N6667 2N6668 2N6667 2N6668 2N6667 2N6668 2N6667 2N6668 Symbol TJ, Tstg VCEO VCB VEB PD PD IC IB VCEO(sus) Symbol VCE(sat) VBE(sat) ICEO IEBO ICEX Symbol |hfe| Cob hFE hfe RqJC RqJA 2N6667 60 60 – 65 to + 150 1000 1000 100 2.0 0.016 Min 65 0.52 20 60 80 250 5.0 − − − − − − − − − − − − 10 15 2N6668 62.5 1.92 Max 80 80 20000 − Max 200 300 300 3.0 3.0 2.8 4.5 2.0 3.0 5.0 1.0 1.0 − − − − mAdc mAdc mAdc mAdc _C/W _C/W W W/_C W W/_C mAdc Unit Unit Unit Vdc Vdc Vdc Adc Vdc Vdc Vdc _C pF − − − 2 2N6667, 2N6668 VCC − 30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES e.g., 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf v 10 ns DUTY CYCLE = 1.0% RC TUT V2 APPROX SCOPE RB 51 D1 + 4.0 V 25 μs [8k [ 120 +8V 0 V1 APPROX − 12 V Figure 2. Switching Times Test Circuit TA 4 PD, POWER DISSIPATION (WATTS) TC 80 10 7 5 3 TC t, TIME ( μs) 2 1 0.7 0.5 0.3 0.2 tf tr ts 3 60 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 2 40 TA 1 20 .td 0 0 20 40 60 80 100 T, TEMPERATURE (°C) 120 140 160 0.1 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS) Figure 3. Power Derating Figure 4. Typical Switching Times 1 r(t) NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.01 0.02 0.05 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 20 50 P(pk) ZθJC(t) = r(t) RθJC RθJC = 1.92°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RθJC(t) 100 200 500 1000 0.2 0.05 0.03 0.02 0.01 0.01 Figure 5. Thermal Response http://onsemi.com 3 2N6667, 2N6668 20 IC, COLLECTOR CURRENT (AMPS) 10 5 3 2 1 TJ = 150°C 2N6667 BONDING WIRE LIMIT 2N6668 THERMAL LIMIT @ TC = 25°C SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1 5 20 30 50 70 100 2 3 7 10 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) dc 1 ms 5 ms 100 μs 0.5 0.3 0.2 0.1 0.05 0.03 0.02 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 6. Maximum Safe Operating Area 10,000 hFE , SMALL−SIGNAL CURENT GAIN 5000 2000 C, CAPACITANCE (pF) 1000 500 200 100 50 TC = 25°C VCE = 4 VOLTS IC = 3 AMPS 300 TJ = 25°C 200 Cib 100 70 50 Cob 20 10 1 2 3 5 7 10 20 30 50 70 100 200 300 500 1000 30 0.1 0.2 0.5 1 2 5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 f, FREQUENCY (kHz) Figure 7. Typical Small−Signal Current Gain Figure 8. Typical Capacitance 20,000 VCE = 3 V 10,000 hFE , DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500 300 200 0.1 TJ = 150°C VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 2.6 TJ = 25°C 2.2 IC = 2 A 1.8 4A 6A TJ = 25°C 1.4 TJ = − 55°C 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMPS) 5 7 10 1 0.6 0.3 0.5 0.7 1 2 3 57 IB, BASE CURRENT (mA) 10 20 30 Figure 9. Typical DC Current Gain Figure 10. Typical Collector Saturation Region http://onsemi.com 4 2N6667, 2N6668 3 θV, TEMPERATURE COEFFICIENTS (mV/°C) 2.5 TJ = 25°C +5 +4 +3 +2 +1 0 −1 −2 −3 −4 −5 0.1 0.2 0.3 0.5 0.7 1 2 ∗θVC for VCE(sat) θVB for VBE 25°C to 150°C −55 °C to 25°C 3 5 7 10 *IC/IB ≤ hFE @ VCE + 3.0 V 3 25°C to 150°C −55 °C to 25°C V, VOLTAGE (VOLTS) 2 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1 23 IC, COLLECTOR CURRENT (AMPS) 5 7 10 1.5 1 0.5 0.1 IC, COLLECTOR CURRENT (AMP) Figure 11. Typical “On” Voltages Figure 12. Typical Temperature Coefficients 105 104 IC, COLLECTOR CURRENT (μ A) 103 102 TJ = 150°C 100°C 25°C +0.4 +0.2 0 −0.2 −0.4 −0.6 −0.8 −1 VBE, BASE−EMITTER VOLTAGE (VOLTS) −1.2 −1.4 101 100 REVERSE FORWARD VCE = 30 V 10− 1 +0.6 Figure 13. Typical Collector Cut−Off Region http://onsemi.com 5 2N6667, 2N6668 PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA −T− B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 Q 123 A U K H Z L V G D N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR R J ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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