2N7000TA

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features Description • • • • These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability D D S TO-92 1 1. Source 2. Gate 3. Drain G G SOT-23 (TO-236AB) S 2N7002/NDS7002A Ordering Information Part Number Marking Package Packing Method Min Order Qty / Immediate Pack Qty 2N7000 2N7000 TO-92 3L Bulk 10000 / 1000 2N7000_D74Z 2N7000 TO-92 3L Ammo 2000 / 2000 2N7000_D75Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000 2N7000_D26Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000 2N7002 702 SOT-23 3L Tape and Reel 3000 / 3000 NDS7002A 712 SOT-23 3L Tape and Reel 3000 / 3000 © 1998 Fairchild Semiconductor Corporation 2N7000 / 2N7002 / NDS7002A Rev. 2.10 www.fairchildsemi.com 1 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor August 2016 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Value Parameter 2N7000 2N7002 NDS7002A 60 Unit VDSS Drain-to-Source Voltage VDGR Drain-Gate Voltage (RGS ≤ 1 M 60 V VGSS Gate-Source Voltage - Continuous ±20 V Gate-Source Voltage - Non Repetitive (tp < 50 S) ID PD TJ, TSTG TL V ±40 Maximum Drain Current - Continuous 200 115 280 mA Maximum Drain Current - Pulsed 500 800 1500 Maximum Power Dissipation Derated above 25°C 400 200 300 mW 3.2 1.6 2.4 mW/°C -65 to 150 °C Operating and Storage Temperature Range -55 to 150 Maximum Lead Temperature for Soldering Purposes, 1/16-inch from Case for 10 Seconds 300 °C Thermal Characteristics Values are at TC = 25°C unless otherwise noted. Symbol RJA Value Parameter 2N7000 2N7002 NDS7002A 312.5 625 417 Type Min. Thermal Resistance, Junction to Ambient Unit °C/W Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol Parameter Conditions Typ. Max. Unit Off Characteristics BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 10 A All VDS = 48 V, VGS = 0 V 2N7000 VDS = 48 V, VGS = 0 V, TC = 125°C VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TC = 125°C IGSSF IGSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse 2N7002 NDS7002A VGS = 15 V, VDS = 0 V 2N7000 VGS = 20 V, VDS = 0 V 2N7002 NDS7002A VGS = -15 V, VDS = 0 V 2N7000 © 1998 Fairchild Semiconductor Corporation V 1 1 VGS = -20 V, VDS = 0 V 2N7002 NDS7002A 2N7000 / 2N7002 / NDS7002A Rev. 2.10 60 1 0.5 A mA A mA 10 nA 100 nA -10 nA -100 nA www.fairchildsemi.com 2 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor Absolute Maximum Ratings Symbol Parameter Conditions Type Min. Typ. Max. Unit 0.8 2.1 3 V 1 2.1 2.5 1.2 5 1.9 9 1.8 5.3 1.2 7.5 VGS = 10 V, ID = 500 mA, TC = 100°C 1.7 13.5 VGS = 5 V, ID = 50 mA 1.7 7.5 VGS = 5 V, ID = 50 mA, TC = 100°C 2.4 13.5 1.2 2 2 3.5 VGS = 5 V, ID = 50 mA 1.7 3 VGS = 5 V, ID = 50 mA, TC = 125°C 2.8 5 0.6 2.5 0.14 0.4 0.6 3.75 0.09 1.5 0.6 1 0.09 0.15 On Characteristics VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VDS = VGS, ID = 1 mA 2N7000 VDS = VGS, ID = 250 A 2N7002 NDS7002A VGS = 10 V, ID = 500 mA 2N7000 VGS = 10 V, ID = 500 mA, TC = 125°C VGS = 4.5 V, ID = 75 mA VGS = 10 V, ID = 500 mA 2N7002 NDS7002A VGS = 10 V, ID = 500 mA VGS = 10 V, ID = 500 mA, TC = 125°C VDS(ON) Drain-Source On-Voltage VGS = 10 V, ID = 500 mA 2N7000 VGS = 4.5 V, ID = 75 mA VGS = 10 V, ID = 500 mA VGS = 5.0 V, ID = 50 mA VGS = 10 V, ID = 500 mA VGS = 5.0 V, ID = 50 mA ID(ON) gFS On-State Drain Current Forward Transconductance 2N7002 NDS7002A VGS = 4.5 V, VDS = 10 V 2N7000 VGS = 10 V, VDS  2 VDS(on) 2N7002 VGS = 10 V, VDS  2 VDS(on) NDS7002A VDS= 10 V, ID = 200 mA 2N7000 VDS 2VDS(ON), ID = 200 mA 2N7002 VDS 2VDS(ON), ID = 200 mA NDS7002A © 1998 Fairchild Semiconductor Corporation 2N7000 / 2N7002 / NDS7002A Rev. 2.10 75 600 500 2700 500 2700 100 320 80 320 80 320  V mA mS www.fairchildsemi.com 3 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (Continued) Symbol Parameter Conditions Type Min. Typ. Max. Unit All 20 50 pF All 11 25 All 4 5 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton toff Turn-On Time Turn-Off Time VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDD = 15 V, RL = 25 , 2N7000 ID = 500 mA, VGS= 10 V, RGEN = 25 10 VDD = 30 V, RL = 150 , 2N7002 ID = 200 mA, VGS= 10 V, NDS7002A RGEN = 25 20 VDD = 15 V, RL = 25 , 2N7000 ID = 500 mA, VGS= 10 V, RGEN = 25 10 VDD = 30 V, RL = 150 , 2N7002 ID = 200 mA, VGS= 10 V, NDS7002A RGEN = 25 20 ns ns Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current 2N7002 115 NDS7002A 280 Maximum Pulsed Drain-Source Diode Forward Current 2N7002 0.8 NDS7002A 1.5 Drain-Source Diode Forward Voltage VGS = 0 V, IS = 115 mA(1) 2N7002 VGS = 0 V, IS = 400 mA(1) NDS7002A 0.88 1.5 0.88 1.2 mA A V Note: 1. Pulse test : Pulse Width ≤ 300 μs, Duty Cycel ≤ 2 %. © 1998 Fairchild Semiconductor Corporation 2N7000 / 2N7002 / NDS7002A Rev. 2.10 www.fairchildsemi.com 4 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (Continued) 2N7000 / 2N7002 / NDS7002A 2 8.0 7.0 1 .5 6.0 1 5.0 0 .5 4.0 V GS =4.0V 4 .5 5 .0 2 .5 6 .0 2 7 .0 8 .0 1 .5 9 .0 10 1 I D , DRAIN-SOURCE CURRENT (A) 9.0 RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 VGS = 10V 3.0 0 2 3 V DS , DRAIN-SOURCE VOLTAGE (V 1 4 0 .5 5 0 0 .8 1 .2 I D , DRA IN CURRENT (A) 1 .6 2 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 2 3 V GS = 10V I D = 500m A RDS(on) , NORMALIZED 1.75 1.5 1.25 1 0.75 0.5 -5 0 V GS 2 .5 TJ = 1 2 5 ° C 2 1 .5 25°C 1 -55°C 0 .5 -2 5 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 0 150 0 Figure 3. On-Resistance Variation with Temperature 0 .4 0 .8 1 .2 I D , DRAIN CURRENT (A) 1 .6 2 Figure 4. On-Resistance Variation with Drain Current and Temperature 2 25°C 125°C 1.6 1.2 0.8 0.4 Vth , N250$/,=(D WK91250$/,=(' *$7(6285&(7+5(6+2/'92/7$*( 1 .1 T J = -55°C VDS = 109 ,'5$,1&855(17$ D 0 .4 Figure 1. On-Region Characteristics DRAIN-SOURCE ON-RESISTANCE RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0 0 2 V GS 4 6 8 , GATE TO SOURCE VOLTAGE (V 10 Figure 5. Transfer Characteristics 0 .9 5 0 .9 0 .8 5 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (°C) 125 150 Figure 6. Gate Threshold Variation with Temperature © 1998 Fairchild Semiconductor Corporation 2N7000 / 2N7002 / NDS7002A Rev. 2.10 I D = 1 mA 1 0 .8 -50 0 V DS = VGS 1 .0 5 www.fairchildsemi.com 5 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics 2N7000 / 2N7002 / NDS7002A 1.075 2 I D = 250µA V GS 9 1 0 .5 IS , REVERSE DRAIN CURRENT (A) BV'66  NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.1 1.05 1.025 1 0.975 0.95 0.925 -50 -25 0 25 75 100 50 TJ , JUNCTION TEM PERATURE (°C) 125 TJ = 1 2 5 ° C 0 .1 -5 5 ° C 0 .0 1 0 .0 0 5 0 .0 0 1 0 .2 150 0 .4 V SD 1 .4 0 .8 1 0 .6 1 .2 , BODY DIODE FORW A RD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Figure 7. Breakdown Voltage Variation with Temperature 60 10 V DS = 2 5 V VGS , GA E-SOURCE VOLTAGE (V) 40 C iss 20 CAPACITANCE (pF) 25°C 0 .0 5 C oss 10 5 C rss f = 1 MHz 2 V GS = 0V 8 6 ID = 5 0 0 m A 4 2 280m A 0 .8 1 .2 Q g , *ATE CHARGE (nC) 115m A 1 0 1 2 V DS 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50 0 .4 0 Figure 9. Capacitance Characteristics 0 . t d(on) VGS R GEN tr RL t d(off) tf 90% 90% V OUT Output, Vout 10% 10% 90% DUT G Input, Vin Inverted 50% 50% 10% S Pulse Width Figure 12. Switching Waveforms Figure 11.6ZLWFKLQJ7HVW&LUFXLW © 1998 Fairchild Semiconductor Corporation 2N7000 / 2N7002 / NDS7002A Rev. 2.10 t off t on D 2 Figure 10. Gate Charge Characteristics VDD V IN 1 .6  . www.fairchildsemi.com 6 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics (Continued)     62 5' / 1 LP  LW P     V 9  *6 9 V V PV P V  V  '& 6,1*/(38/6( 7   & $  X ,'5$,1&855(17$ '  ,'5$,1&855(17$ '     5'      9*6    9    7   & $  Figure 13. 2N7000 Maximum Safe Operating Area  5' 62 1  /LP  P ,'5$,1&855(17$ '     6,1*/(38/6(  7   & $   V V PV V     9 '6 9 '5$,16285&(92/7$*(   X V V PV V V   '& V 9  *6    P X Figure 14. 2N7002 Maximum Safe Operating Area LW   P V   '& V 6,1*/(38/6(      9'6 '5$,16285&(92/7$*(9    1 P LW    62  /LP     9 '6 9 '5$,16285&(92/7$*(9   Figure 15. NDS7000A Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVETRANSIENT THERMAL RESISTANCE 1 0.5 '   0.2    RQ-$ W  UW 5Q-$ 5Q- $= (See Datasheet)  0.1 3SN  W  0.05   W  TJ - TA = P * 5Q-$ (t)  6LQJOH3XOVH 0.02 0.01 0.0001 0.001 ,D uty Cy cle' W  W  0.01 0.1 t 1, TIME (sec) 1 10 100 300 Figure 16. TO-92, 2N7000 Transient Thermal Response Curve r(t), NORMALIZED EFFECTIVETRANSIENT THERMAL RESISTANCE 1 0.5 '  0.2    0.1 0.05 RQ-$ W  UW 5Q-$  5Q-$= (See Datasheet)         P(pk)     t1 0.01 6LQJOH3XOVH t2 TJ - TA = P * 5Q-$ (t) ,D uty Cy cle' W  W  0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 R 100 300 Figure 1. 62711'6$7UDQVLHQW7KHUPDO5HVSRQVH&XUYH © 1998 Fairchild Semiconductor Corporation 2N7000 / 2N7002 / NDS7002A Rev. 2.10 www.fairchildsemi.com 7 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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