2N7002K

Field Effect Transistor N-Channel, Enhancement Mode 2N7002K Features • • • • • • • • Low On−Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input / Output Leakage Ultra−Small Surface Mount Package ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114 and ESD CDM = 2000 V as per JESD22 C101 This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant www.onsemi.com SOT−23 (TO−236) CASE 318−08 MARKING DIAGRAM 7K M ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Parameter Value Unit 60 V VDSS Drain−Source Voltage VDGR Drain−Gate Voltage (RGS ≤ 1.0 MW) 60 V VGSS Gate−Source Voltage ±20 V 300 mA ID Drain Current TJ Operating Junction Temperature Range −55 to +150 °C Storage Temperature Range −55 to +150 °C Continuous Pulsed TSTG 1 7K M = Specific Device Code = Date Code FUNCTIONAL SCHEMATIC D 800 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol PD RqJA Parameter Value G S Unit Total Device Dissipation 350 mW Derate Above TA = 25°C 2.8 mW/°C Thermal Resistance, Junction−to−Ambient (Note 1) 350 °C/W ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. 1. Device mounted on FR−4 PCB, 1 inch x 0.85 inch x 0.062 inch;Minimum land pad size. © Semiconductor Components Industries, LLC, 2020 October, 2020 − Rev. 2 1 Publication Order Number: 2N7002K−FSC/D 2N7002K ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Conditions Min Max Unit OFF CHARACTERISTICS (Note 2) BVDSS IDSS IGSS Drain−Source Breakdown Voltage VGS = 0 V, ID = 10 mA 60 − V Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V − 1.0 mA VDS = 60 V, VGS = 0 V, TJ = 125°C − 500 VGS = ±20 V, VDS = 0 V − ±10 mA 1.0 2.5 V W Gate−Body Leakage ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA RDS(ON) Static Drain−Source On−Resistance VGS = 10 V, ID = 0.5 A − 2 VGS = 4.5 V, ID = 200 mA − 4 On−State Drain Current VGS = 10 V, VDS = 7.5 V 1.5 − A Forward Transconductance VDS = 10 V, ID = 0.2 A 200 − mS − 50 pF ID(ON) gFS DYNAMIC CHARACTERISTICS VDS = 25 V, VGS= 0 V, f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance − 15 pF Crss Reverse Transfer Capacitance − 6 pF − 5 ns − 30 ns SWITCHING CHARACTERISTICS tD(ON) Turn−On Delay Time tD(OFF) Turn−Off Delay Time VDD = 30 V, IDSS = 200 mA, RG = 10 W, VGS = 10 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Short duration test pulse used to minimize self−heating effect. www.onsemi.com 2 2N7002K 2.0 3.0 VGS = 10 V RDS(on), DRAIN−SOURCE ON−RESISTANCE (W) ID, DRAIN−SOURCE CURRENT (A) TYPICAL PERFORMANCE CHARACTERISTICS 5V 1.5 4V 1.0 3V 0.5 0.0 VGS = 3 V 2.5 4.5 V 5V 2.0 7V 1.0 8V 0 3.0 2 4 6 8 0.5 0.0 10 10 V 0.2 1.5 1.0 0 50 100 1.0 ID = 500 mA 0.5 0.0 150 ID = 50 mA 2 Vth, GATE−SOURCE THRESHOLD VOLTAGE (V) 25°C 0.8 150°C TJ = −25°C 125°C 0.4 75°C 0.2 3 4 5 4 5 6 7 8 9 10 Figure 4. On−Resistance Variation with Gate−Source Voltage 1.0 VDS = 10 V 3 VGS, GATE−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature 2 1.0 1.5 TJ, JUNCTION TEMPERATURE (°C) 0.6 0.8 2.0 2.0 0.5 −50 0.6 Figure 2. On−Resistance Variation with Gate Voltage and Drain Current VDS = 10 V ID = 500 mA 2.5 0.4 ID, DRAIN−SOURCE CURRENT (A) RDS(on), DRAIN−SOURCE ON−RESISTANCE (W) RDS(on), DRAIN−SOURCE ON−RESISTANCE (W) 9V 2V Figure 1. On−Region Characteristics ID, DRAIN−SOURCE CURRENT (A) 6V 1.5 VDS, DRAIN−SOURCE VOLTAGE (V) 0.0 4V 2.0 VDS = VGS 1.8 ID = 1 mA 1.6 ID = 0.25 mA 1.4 1.2 1.0 −50 6 VGS, GATE−SOURCE VOLTAGE (V) 0 50 100 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature www.onsemi.com 3 150 VDS = 10 V VGS, GATE−SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (mA) 2N7002K 100 TA = 150°C 25°C 10 −55°C 1 0.0 0.2 0.4 0.6 0.8 1.0 10 8 6 500 mA 280 mA 4 2 115 mA 0 0 0.1 0.2 VDS, DRAIN−SOURCE VOLTAGE (V) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Qg, GATE CHARGE Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature Figure 8. Gate Charge Characteristics 1 ID, DRAIN CURRENT (A) 0.5 100 ms RDS(ON) LIMIT 1 ms 0.05 10ms SINGLE PULSE RqJA = 350°C/W TA = 25°C 0.005 0.01 0.1 1 100 ms 1s 10 s DC 10 100 200 VDS, DRAIN−SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area ORDERING INFORMATION Part Number Top Mark Package Shipping† 2N7002K 7K SOT−23 3L (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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