2N7002KW

2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • www.onsemi.com Low On−Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra−Small Surface Mount Package These Devices are Pb−Free and are RoHS Compliant ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V as per JESD22 C101 D S G SC−70 3 LEAD CASE 419AB MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Drain−Source Voltage Gate−Source Voltage Maximum Drain Current Continuous TJ = 100°C Pulsed Operating Junction Temperature Range Storage Temperature Range Symbol Value Unit VDSS 60 V VGSS ±20 V ID 310 195 1.2 mA mA A TJ −55 to +150 °C TSTG −55 to +150 °C 7KW 7KW = Specific Device Marking D Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. G THERMAL CHARACTERISTICS Parameter Total Device Dissipation Derating above TA = 25°C Thermal Resistance, Junction to Ambient* Symbol Value Unit PD 300 2.4 mW mW/°C RqJA 410 °C/W *Device mounted on FR−4 PCB, 1″ x 0.85″ x 0.062″. Minimum land pad size © Semiconductor Components Industries, LLC, 2011 May, 2018 − Rev. 1 1 S ORDERING INFORMATION† Device 2N7002KW Package Shipping† SC−70 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: 2N7002KW/D 2N7002KW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage VGS = 0 V, ID = 10 mA 60 − − V IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 125°C − − 1.0 0.5 mA mA IGSS Gate−Body Leakage VDS = 0 V, VGS = ±20 V − − ±10 mA BVDSS ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA 1.1 − 2.1 V RDS(on) Static Drain−Source On−Resistance VGS = 10 V, ID = 500 mA VGS = 10 V, ID = 500 mA, TJ = 100°C VGS = 5 V, ID = 50 mA VGS = 5 V, ID = 50 mA, TJ = 100°C − − 1.6 2.4 2 3 W VDS(on) Drain−Source On−Voltage VGS = 10 V, ID = 500 mA VGS = 5 V, ID = 50 mA − − 3.75 1.5 V On−State Drain Current VGS = 10 V, VDS = 2 V 500 − − mA Forward Transconductance VDS = 2 V, ID = 0.2 A 80 − − mS VDS = 25 V, VGS = 0 V, f = 1.0 MHz − − 50 pF ID(on) gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − − 25 pF Crss Reverse Transfer Capacitance − − 5 pF − − 20 ns − − 60 ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time td(off) Turn-Off Delay Time VDD = 30 V, RL = 150 W, VGS = 10 V, ID = 200 mA, RGEN = 25 W DRAIN−SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain−Source Diode Forward Current − − 115 mA ISM Maximum Pulsed Drain−Source Diode Forward Current − − 0.8 A VSD Drain−Source Diode Forward Voltage − − 1.1 V IS VGS = 0 V, IS = 115 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. www.onsemi.com 2 2N7002KW TYPICAL PERFORMANCE CHARACTERISTICS 2.2 VGS = 10V 2.1 RDS(on) (W) Normalized Drain−Source On−Resistance ID. Drain−Source Current (A) 2.4 9V 8V 1.8 6V 7V 1.5 5V 1.2 4V 0.9 0.6 0.3 0.0 VGS = 3V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2.0 1.8 VGS = 10V ID = 500mA 1.6 1.4 VGS = 5V 1.2 I D = 50mA 1.0 0.8 0.6 0.4 −50 4.5 0 VDS. Drain−Source Voltage (V) 100 150 o Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Temperature 3.0 5 VGS = 10V VGS = 4V 4.5V 2.5 4 VGS = 7V (W) 5V 2.0 RDS(on) Drain−Source On−Resistance RDS(on), (W) Drain−Source On−Resistance 50 TJ. Junction Temperature ( C) 6V 1.5 8V 1.0 10V 9V 3 o TA = 125 C 2 o TA = 25 C 1 o TA = −55 C 0.5 0.0 0.5 1.0 1.5 0 0.0 2.0 ID. Drain−Source Current(A) Vth. Normalized Gate−Source Threshold Voltage (V) ID. Drain−Source Current (A) o TA = −55( C) o TA = 25( C) 2.5 2.0 o TA = 125( C) 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 1.5 2.0 Figure 4. On−Resistance Variation with Drain Current and Temperature 3.5 3.0 1.0 ID. Drain Current (A) Figure 3. On−Resistance Variation with Gate Voltage and Drain Current VDS = 10V 0.5 9 10 1.10 VDS = VGS 1.05 1.00 ID = 1mA 0.95 ID = 0.25mA 0.90 0.85 0.80 0.75 −25 0 25 50 75 100 125 o VGS. Gate−Source Voltage (V) TJ. Junction Temperature ( C) Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature www.onsemi.com 3 2N7002KW TYPICAL PERFORMANCE CHARACTERISTICS 10000 1.100 VGS = 0 V ID=250uA IS. Reverse Drain Current [mA] BVdss , Normalized Drain Source Breakdown Voltage 1.075 1.050 1.025 1.000 0.975 0.950 0.925 −25 0 25 50 75 100 1000 100 o TA=125 C 10 o TA=25 C 1 o TA=−55 C 0.1 125 0.0 0.2 o Figure 7. Breakdown Voltage Variation with Temperature 0.8 1.0 1.2 10 VGS. Gate−Source Voltage (V) VDS = 25V CISS 10 COSS CRSS f = 1MHZ VGS = 0V 1 1 10 8 6 ID = 500mA 4 2 ID = 115mA 0 0.0 100 0.2 0.4 0 100ms 1ms −1 10 DC RDS(on) Limit 10ms 100ms 1S −2 10 Vgs=10V Single Pulse o Rthja=410 C/W o Ta = 25 C −3 10 −4 10 −1 10 0 10 1 10 0.6 0.8 1.0 Figure 10. Gate Charge Characteristics r(t), Normalized Transient Thermal Resistance Figure 9. Capacitance Variation 10 ID = 280mA Qg. Gate Charge (nC) VDS. Drain to Source Voltage (V) ID, Drain Current [A] 0.6 Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature 100 CISS, COSS, CRSS . Capacitance (pF) 0.4 VSD. Body Diode Forward Voltage [V] TJ, Junction Temperatture( C) 1 50% 0.1 10 10% 5% 2% D=1% Single Pulse 0.01 2 Rthja(t)=r(t)*Rthja o Rthja=410 C/W 20% 1E−4 1E−3 0.01 0.1 1 10 100 1000 t1, time(sec) VDS, Drain−Source Voltage [V] Figure 11. Maximum Safe Operating Area Figure 12. Transient Thermal Response Curve www.onsemi.com 4 2N7002KW PACKAGE DIMENSIONS SC−70, 3 Lead, 1.25x2 CASE 419AB−01 ISSUE O D SYMBOL MIN A 0.80 E1 E TOP VIEW 1.10 0.00 A2 0.80 b 0.15 0.30 c 0.08 0.22 D 1.80 2.00 2.20 E 1.80 2.10 2.40 E1 1.15 1.25 1.35 0.10 0.90 1.00 0.65 BSC L e MAX A1 e e NOM 0.26 0.36 L1 0.42 REF L2 0.15 BSC 0.46 θ 0º 8º θ1 4º 10º q1 A2 A q q1 b L L1 A1 SIDE VIEW c L2 END VIEW Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC MO-203. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N7002KW/D