DATA SHEET
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PNP Epitaxial Silicon
Transistor
KSA1381
1. Emitter
2.Collector
3.Base
Features
•
•
•
•
•
•
•
High Voltage: VCEO = −300 V
Low Reverse Transfer Capacitance: Cre = 2.3 pF at VCB = −30 V
Excellent Gain Linearity for Low THD
High Frequency: 150 MHz
Full Thermal and Electrical Spice Models are Available
Complement to KSC3503
This is a Pb−Free Device
TO−126−3LD
CASE 340AS
MARKING DIAGRAM
Applications
• Audio, Voltage Amplifier and Current Source
• CRT Display, Video Output
• General Purpose Amplifier
$Y&3
A1381E
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Units
BVCBO
Collector−Base Voltage
−300
V
BVCEO
Collector−Emitter Voltage
−300
V
BVEBO
Emitter−Base Voltage
−5
V
IC
Collector Current (DC)
−100
mA
ICP
Collector Current (Pulse)
−200
mA
PC
Total Device Dissipation, TC=25°C
TC = 125°C
7
1.2
W
W
−55~+150
°C
TJ, TSTG
Junction and Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Note 1)
ORDERING INFORMATION
(Ta = 25°C unless otherwise noted)
Parameter
Symbol
RqJC
Thermal Resistance, Junction to Case
$Y
= Logo
&3
= 3−Digit Date Code
A1381E = Specific Device Code
Max.
Units
17.8
°C/W
See detailed ordering and shipping information on page 2 of
this data sheet.
1. Device mounted on minimum pad size.
© Semiconductor Components Industries, LLC, 2008
August, 2022 − Rev. 1
1
Publication Order Number:
KSA1381/D
KSA1381
ELECTRICAL CHARACTERISTICS (Note 2) (Ta = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
BVCBO
Collector−Base Breakdown Voltage
IC = −10 mA, IE = 0
−300
−
−
V
BVCEO
Collector−Emitter Breakdown Voltage
IC = −1 mA, IB = 0
−300
−
−
V
BVEBO
Emitter−Base Breakdown Voltage
IE = −10 mA, IC = 0
−5
−
−
V
ICBO
Collector Cut−off Current
VCB = −200 V, IE = 0
−
−
−0.1
mA
IEBO
Emitter Cut−off Current
VEB = −4 V, IC = 0
−
−
−0.1
mA
hFE
DC Current Gain
VCE = −10 V, IC = −10 mA
100
−
200
VCE(sat)
Collector−Emitter Saturation Voltage
IC = −20 mA, IB = −2 mA
−
−
−0.6
V
VBE(sat)
Base−Emitter Saturation Voltage
IC = −20 mA, IB = −2 mA
−
−
−1
V
fT
Current Gain Bandwidth Product
VCE = −30 V, IC = −10 mA
−
150
−
MHz
Cob
Output Capacitance
VCB = −30 V, f = 1 MHz
−
3.1
−
pF
Cre
Reverse Transfer Capacitance
VCB = −30 V, f = 1 MHz
−
2.3
−
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%
ORDERING INFORMATION
Part Number (Note 3, 4)
Marking
Package
Shipping
Remarks
KSA1381ESTU
A1381E
TO−126−3LD (Pb−Free)
1920 Units / Tube
HFE1 E Grade
3. Affix “−S−” means the standard TO126 Package.(see package dimensions). If the affix is “−STS−” instead of “−S−”, that mean the short−lead
TO126 package.
4. Suffix “−TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method.
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2
KSA1381
TYPICAL CHARACTERISTICS
−10
IB = −140 mA I = −120 mA
B
−16
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
−20
IB = −100 mA
IB = −80 mA
−12
IB = −60 mA
−8
IB = −40 mA
IB = −20 mA
−4
−0
−0
IB = 0 mA
−2
−4
−6
−8
IB = −60 mA
−8
IB = −40 mA
−6
IB = −20 mA
IB = −10 mA
−2
−0
−0
−10
−60
−80
−100
−10
100
−1
−1
VBE(sat)
−0.1
VCE(sat)
−0.01
−0.1
−100
−10
IC = 10 IB
VBE(sat), VCE(sat), SATURATION
VOLTAGE (V)
VCE = −10 V
IC, COLLECTOR CURRENT (mA)
−1
−10
−100
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
Figure 4. Base−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
1000
−160
IC, COLLECTOR CURRENT (mA)
fT, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
−40
Figure 2. Static Characteristic
1000
VCE = −30 V
100
10
1
−0.1
IB = 0 mA
−20
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Static Characteristic
hFE, DC CURRENT GAIN
IB = −30 mA
−4
VCE, COLLECTOR−EMITTER VOLTAGE (V)
10
−0.1
IB = −50 mA
−1
−10
−100
−120
−100
−80
−60
−40
−20
−0
−0.0
−1000
IC, COLLECTOR CURRENT (mA)
VCE = −10 V
−140
−0.2
−0.4
−0.6
−0.8
−1.0
VBE, BASE−EMITTER VOLTAGE (V)
Figure 5. Current Gain Bandwidth Product
Figure 6. Base−Emitter On Voltage
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3
−1.2
KSA1381
TYPICAL CHARACTERISTICS (Continued)
100
IE = 0
f = 1 MHz
Cre, CAPACITANCE (pF)
Cob, CAPACITANCE (pF)
100
10
1
0.1
−0.1
−1
−10
−100
f = 1 MHz
10
1
0.1
−0.1
−1000
VCB, COLLECTOR−BASE VOLTAGE (V)
−1000
−100
Figure 8. Reverse Transfer
Capacitance
1000
8
PC, POWER DISSIPATION (W)
IC, COLLECTOR CURRENT (mA)
−10
VCB, COLLECTOR−BASE VOLTAGE (V)
Figure 7. Collector Output
Capacitance
IC MAX. (Pulse)
IC MAX.
100
500 ms
1 ms
10 ms
DC (TC = 125°C)
10
1
−1
DC (Ta = 25°C)
1
10
100
7
6
5
3
2
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TC = 125°C
1
0
1000
TC = 25°C
4
0
25
50
75
100
125
T, TEMPERATURE (°C)
Figure 9. Safe Operating Area
Figure 10. Power Derating
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4
150
175
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−126−3LD
CASE 340AS
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13817G
TO−126−3LD
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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