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2SA1827S-AY

2SA1827S-AY

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT78

  • 描述:

    TRANS PNP 100V 4A FLP

  • 数据手册
  • 价格&库存
2SA1827S-AY 数据手册
Ordering number:ENN3879A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1827/2SC4731 100V/4A Switching Applications Applications Package Dimensions · Relay drivers, high-speed inverters, converters, and other general high-current switching applicaions. unit:mm 2084B [2SA1827/2SC4731] Features 2.6 1.4 1.2 1.0 8.5 · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. 4.5 1.9 10.5 7.5 1.2 1.6 0.5 0.5 1 2 3 1 : Emitter 2 : Collector 3 : Base SANYO : FLP Specifications 2.5 ( ) : 2SA1827 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol 2.5 Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)120 V Collector-to-Emitter Voltage VCEO VEBO (–)100 V (–)6 V IC (–)4 A ICP (–)8 A Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current IB (–)0.8 A Collector Dissipation PC 1.5 W 150 ˚C –55 to +150 ˚C Junction Temperature Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(–)100V, IE=0 (–)1 µA Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)1 µA DC Current Gain hFE1 hFE2 VCE=(–)5V, IC=(–)500mA VCE=(–)5V, IC=(–)3A 100* 40 * : The 2SA1827/2SC4731 are classified by 500mA hFE as follows : Rank hFE R 100 to S 200 140 to 400* Continued on next page. T 280 200 to 400 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 20701TS TA-3151, 3152/91098HA (KT)/D151MH (KOTO) No.3879–1/4 2SA1827/2SC4731 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product fT Output Capacitance Cob min VCB=(–)10V, f=1MHz VCE(sat) IC=(–)2A, IB=(–)0.2A Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)2A, IB=(–)0.2A Emitter-to-Base Breakdown Voltage Unit (130) MHz 180 MHz pF (–200) Turn-ON Time V(BR)EBO ton IE=(–)10µA, IC=0 See specified Test Circuit Storage Time tstg See specified Test CIrcuit tf See specified Test Circuit Fall Time max (65)40 V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ Collector-to-Emitter Breakdown Voltage typ VCE=(–)10V, IC=(–)500mA Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Ratings Conditions (–500) mV 150 400 mV (–)0.9 (–)1.2 V (–)120 V (–)100 V (–)6 V 100 ns (800) ns 900 ns 50 ns Switching Time Test Circuit PW=20µs Duty Cycle≤1% IB1 IB2 VR 50Ω + 100µF RL + 470µF 25V IC=10IB1=--10IB2=2A (For PNP, the polarity is reversed.) --5V IC -- VCE 2SA1827 --100mA --90mA --80mA --70mA --60mA --50mA --4 --3 A --40m m --30 A --20mA --2 --10mA --1 --5mA 0 --2mA IB=0 0 --1 --2 --3 IC -- VCE 5 Collector Current, IC – A --5 Collector Current, IC – A OUTPUT RB INPUT --4 2SC4731 80mA 70mA 60mA 4 A 30m A 5mA 2mA IB=0 0 --5 --5mA --4mA --3mA --2mA 3 4 5 IC -- VCE 2SC4731 8mA Collector Current, IC – A Collector Current, IC – A 2 Collector-to-Emitter Voltage, VCE – V ITR04812 2.0 A --10m --9mA --8mA --7mA --6mA --0.8 1 0 2SA1827 --1.2 10mA 40m A 50m 2 1 IC -- VCE --1.6 20mA 3 Collector-to-Emitter Voltage, VCE – V ITR04811 --2.0 100mA 90mA 7mA 1.6 6mA 5mA 1.2 4mA 3mA 0.8 2mA 0.4 --0.4 1mA --1mA IB=0 0 0 --10 --20 --30 IB=0 0 --40 --50 Collector-to-Emitter Voltage, VCE – V ITR04813 0 10 20 30 40 50 Collector-to-Emitter Voltage, VCE – V ITR04814 No.3879–2/4 2SA1827/2SC4731 IC -- VBE --5 IC -- VBE 5 --1 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE – V 0 Ta=75°C 25°C 7 5 3 2 --25°C 0.8 1.0 2SC4731 VCE=5V 5 10 1.2 ITR04816 hFE -- IC Ta=75°C 25°C 3 --25°C 100 0.6 7 DC Current Gain, hFE 2 0.4 Base-to-Emitter Voltage, VBE – V 2SA1827 VCE=--5V 5 3 0.2 ITR04815 1000 7 DC Current Gain, hFE --1.2 hFE -- IC 1000 2 --25°C 100 7 5 3 2 10 7 5 7 5 5 --0.01 2 3 5 2 --0.1 3 5 --1.0 2 3 Collector Current, IC – A 5 5 --10 ITR04817 f T -- IC 5 2SA1827 / 2SC4731 VCE=10V 2 2SC4731 2SA1 827 100 7 5 3 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC – A 3 2 2 0.1 3 5 1.0 2 3 5 10 ITR04818 Cob -- VCB 2SA1827 / 2SC4731 f=1MHz 2SA 182 7 2SC 473 1 7 5 3 2 10 (For PNP, minus sign is omitted.) 5 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR04820 Collector-to-Base Voltage, VCB -- V ITR04819 VCE (sat) -- IC 5 2SA1827 IC / IB=10 3 5 Collector Current, IC – A 100 5 VCE (sat) -- IC 5 3 7 (For PNP, minus sign is omitted.) 2 2 2 Output Capacitance, Cob – pF 3 0.01 3 2SC4731 IC / IB=20 3 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV Gain-Bandwidth Product, fT – MHz 2 0 0 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 3 1 0 10 4 Ta=7 5 °C 25°C --3 --2 2SC4731 VCE=5V Collector Current, IC – A --4 Ta=75 °C 25°C --25°C Collector Current, IC – A 2SA1827 VCE=--5V 2 1000 --1000 5 3 2 --100 25 75°C 5 Ta= 3 2 --25 °C °C 7 5 3 2 100 7 5 25 5 Ta=7 3 °C 5 --2 2 °C °C 10 --10 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 Collector Current, IC – A 2 3 5 --10 ITR04821 5 0.01 2 3 5 0.1 2 3 5 1.0 Collector Current, IC – A 2 3 5 10 ITR04822 No.3879–3/4 2SA1827/2SC4731 VBE (sat) -- IC --10 5 3 2 25°C Ta=--25°C 7 75°C 5 3 2 --0.01 2 3 5 2 --0.1 3 5 --1.0 2 Collector Current, IC – A 1.0 25°C Ta=--25°C 7 75°C 5 3 5 s DC op 3 2 era tio s 5 7 1.0 2 3 5 n 7 10 0.1 2 3 5 2 1.0 3 5 10 ITR04824 PC -- Ta 2SA1827 / 2SC4731 1.4 2SA1827 / 2SC4731 Tc=25°C Single pulse (For PNP, minus sign is omitted). 3 5 1.5 0.1 7 5 2 3 Collector Current, IC – A Collector Dissipation, PC – W m 0m 2 1.6 10 10 0.01 s IC=4A 1.0 7 5 0.01 7 5 2 --10 ITR04823 2 2 3 5 1m Collector Current, IC – A 3 ASO ICP=8A 3 3 5 2 5 10 7 5 2SC4731 IC / IB=10 7 Base-to-Emitter Saturation Voltage, VBE (sat) – V Base-to-Emitter Saturation Voltage, VBE (sat) – V 7 --1.0 VBE (sat) -- IC 10 2SA1827 IC / IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0 2 3 5 Collector-to-Emitter Voltage, VCE – 7 100 2 V ITR04825 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 ITR04826 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice. PS No.3879–4/4 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: 2SC4731S-AY 2SC4731T-AY 2SA1827S-AY
2SA1827S-AY 价格&库存

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