2SA1943OTU

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -17A. High Power Dissipation : 150watts. High Frequency : 30MHz. High Voltage : VCEO= -250V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SC5200/FJL4315. Full thermal and electrical Spice models are available. Same transistor is also available in: -- TO3P package, 2SA1962/FJA4213 : 130 watts -- TO220 package, FJP1943 : 80 watts -- TO220F package, FJPF1943 : 50 watts Absolute Maximum Ratings* Symbol TO-264 1 1.Base 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Parameter Ratings Units BVCBO Collector-Base Voltage -250 V BVCEO Collector-Emitter Voltage -250 V BVEBO Emitter-Base Voltage -5 V IC Collector Current -17 A IB Base Current -1.5 A PD Total Device Dissipation(TC=25°C) Derate above 25°C 150 1.04 W W/°C TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol RθJC Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Max. Units 0.83 °C/W * Device mounted on minimum pad size hFE Classification Classification R O hFE1 55 ~ 110 80 ~ 160 © 2009 Fairchild Semiconductor Corporation 2SA1943/FJL4215 Rev. C www.fairchildsemi.com 1 2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor January 2009 a Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=-5mA, IE=0 -250 V BVCEO Collector-Emitter Breakdown Voltage IC=-10mA, RBE=∞ -250 V BVEBO Emitter-Base Breakdown Voltage IE=-5mA, IC=0 -5 V ICBO Collector Cut-off Current VCB=-230V, IE=0 -5.0 µA IEBO Emitter Cut-off Current VEB=-5V, IC=0 -5.0 µA hFE1 DC Current Gain VCE=-5V, IC=-1A 55 hFE2 DC Current Gain VCE=-5V, IC=-7A 35 VCE(sat) Collector-Emitter Saturation Voltage IC=-8A, IB=-0.8A -0.4 -3.0 V VBE(on) Base-Emitter On Voltage VCE=-5V, IC=-7A -1.0 -1.5 V fT Current Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz Cob Output Capacitance VCB=-10V, f=1MHz 360 pF 160 60 * Pulse Test: Pulse Width=20µs, Duty Cycle≤2% Ordering Information Part Number Marking Package Packing Method 2SA1943RTU A1943R TO-264 TUBE hFE1 R grade 2SA1943OTU A1943O TO-264 TUBE hFE1 O grade FJL4215RTU J4215R TO-264 TUBE hFE1 R grade FJL4215OTU J4215O TO-264 TUBE hFE1 O grade © 2009 Fairchild Semiconductor Corporation 2SA1943/FJL4215 Rev. C Remarks www.fairchildsemi.com 2 2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor Electrical Characteristics* T =25°C unless otherwise noted -20 IB = -900mA IB = -800mA IB = -1A -16 -14 -12 IB = -300mA -10 IB = -200mA o Tj = 25 C -8 IB = -100mA -6 VCE = -5V o Tj = 125 C IB = -700mA IB = -600mA IB = -500mA A IB = -400m hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -18 -4 100 o Tj = -25 C 10 -2 -0 -2 -4 -6 -8 1 0.1 -10 1 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain ( R Grade ) 10000 hFE, DC CURRENT GAIN o Tj = 25 C Vce(sat)[mV], SATURATION VOLTAGE o Tj = 125 C VCE = -5V 100 o Tj = -25 C 10 1 0.1 1 10 Ic=-10Ib 1000 o o Tj=25 C Tj=125 C 100 o Tj=-25 C 10 0.1 1 IC[A], COLLECTOR CURRENT 10 Ic[A], COLLECTOR CURRENT Figure 3. DC current Gain ( O Grade ) Figure 4. Collector-Emitter Saturation Voltage 14 Ic=-10Ib o Tj=-25 C 12 IC[A], COLLECTOR CURRENT Vbe(sat)[mV], SATURATION VOLTAGE 10000 o Tj=25 C 1000 o Tj=125 C 100 0.1 8 6 4 2 0 0.0 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 10 V BE [V], BASE-EMITTER VOLTAGE Ic[A], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage © 2009 Fairchild Semiconductor Corporation 2SA1943/FJL4215 Rev. C V CE = 5V 10 www.fairchildsemi.com 3 2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor Typical Characteristics IC MAX. (Pulsed*) IC [A], COLLECTOR CURRENT 0.9 o Transient Thermal Resistance, Rthjc[ C / W] 100 1.0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 10ms* 10 IC MAX. (DC) 100ms* DC 1 0.1 *SINGLE NONREPETITIVE o PULSE TC=25[ C] 0.01 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 1 Pulse duration [sec] 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Thermal Resistance Figure 8. Safe Operating Area 160 PC[W], POWER DISSIPATION 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 9. Power Derating © 2009 Fairchild Semiconductor Corporation 2SA1943/FJL4215 Rev. C www.fairchildsemi.com 4 2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor Typical Characteristics 5.20 4.80 20.20 19.80 B 18.30 17.70 1.00 C 6.20 5.80 3.50 3.10 R2.00 C A 16.60 2.00 12.00 7.40 7.00 0.254 A B 1.20 0.80 9.10 8.90 C 21.62 21.02 0.50 20.20 19.80 R1.00 C 1.70 1.30 1.50 4.05 C 3.20 2.80 2.70 2X 2.30 C 1.25 0.90 0.254 M A B 3.10 C 2.50 20.50 C 19.50 5.75 5.15 3.70 3.30 1.50 0.85 C 0.50 5.75 5.15 FRONT VIEW 0.15 1.50 SIDE VIEW 5.20 4.80 BOTTOM VIEW NOTES: A. PACKAGE REFERENCE: JEDEC TO264 VARIATION AA. B. ALL DIMENSIONS ARE IN MILLIMETERS. C OUT OF JEDEC STANDARD VALUE. D. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. E. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. F. THIS PACKAGE IS INTENDED ONLY FOR "FS PKG CODE AR" G. DRAWING FILE NAME: TO264A03REV2 BACK VIEW 2.60 C 2.40 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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