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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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2SA1962/FJA4213
PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
•
•
•
•
•
•
•
•
•
High Current Capability: IC = -17A
High Power Dissipation : 130watts
High Frequency : 30MHz.
High Voltage : VCEO= -250V
Wide S.O.A for reliable operation.
Excellent Gain Linearity for low THD.
Complement to 2SC5242/FJA4313.
Thermal and electrical Spice models are available.
Same transistor is also available in:
-- TO264 package, 2SA1943/FJL4215 : 150 watts
-- TO220 package, FJP1943 : 80 watts
-- TO220F package, FJPF1943 : 50 watts
Absolute Maximum Ratings*
Symbol
TO-3P
1
1.Base 2.Collector 3.Emitter
Ta = 25°C unless otherwise noted
Parameter
Ratings
Units
BVCBO
Collector-Base Voltage
-250
V
BVCEO
Collector-Emitter Voltage
-250
V
BVEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-17
A
IB
Base Current
-1.5
A
PD
Total Device Dissipation(TC=25°C)
Derate above 25°C
130
1.04
W
W/°C
TJ, TSTG
Junction and Storage Temperature
- 50 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Symbol
RθJC
Ta=25°C unless otherwise noted
Parameter
Thermal Resistance, Junction to Case
Max.
Units
0.96
°C/W
* Device mounted on minimum pad size
hFE Classification
Classification
R
O
hFE1
55 ~ 110
80 ~ 160
© 2009 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. C
www.fairchildsemi.com
1
2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor
January 2009
a
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC=-5mA, IE=0
-250
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=-10mA, RBE=∞
-250
V
BVEBO
Emitter-Base Breakdown Voltage
IE=-5mA, IC=0
-5
V
ICBO
Collector Cut-off Current
VCB=-230V, IE=0
-5.0
µA
IEBO
Emitter Cut-off Current
VEB=-5V, IC=0
-5.0
µA
hFE1
DC Current Gain
VCE=-5V, IC=-1A
55
hFE2
DC Current Gain
VCE=-5V, IC=-7A
35
VCE(sat)
Collector-Emitter Saturation Voltage
IC=-8A, IB=-0.8A
-0.4
-3.0
V
VBE(on)
Base-Emitter On Voltage
VCE=-5V, IC=-7A
-1.0
-1.5
V
fT
Current Gain Bandwidth Product
VCE=-5V, IC=-1A
30
MHz
Cob
Output Capacitance
VCB=-10V, f=1MHz
360
pF
160
60
* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%
Ordering Information
Part Number
Marking
Package
Packing Method
2SA1962RTU
A1962R
TO-3P
TUBE
hFE1 R grade
2SA1962OTU
A1962O
TO-3P
TUBE
hFE1 O grade
FJA4213RTU
J4213R
TO-3P
TUBE
hFE1 R grade
FJA4213OTU
J4213O
TO-3P
TUBE
hFE1 O grade
© 2009 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. C
Remarks
www.fairchildsemi.com
2
2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor
Electrical Characteristics* T =25°C unless otherwise noted
-20
IB = -900mA
IB = -800mA
IB = -1A
-16
-14
-12
IB = -300mA
-10
IB = -200mA
o
Tj = 25 C
-8
IB = -100mA
-6
VCE = -5V
o
Tj = 125 C
IB = -700mA
IB = -600mA
IB = -500mA
A
IB = -400m
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-18
-4
100
o
Tj = -25 C
10
-2
-0
-2
-4
-6
-8
1
0.1
-10
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain ( R Grade )
10000
hFE, DC CURRENT GAIN
o
Tj = 25 C
Vce(sat)[mV], SATURATION VOLTAGE
o
Tj = 125 C
VCE = -5V
100
o
Tj = -25 C
10
1
0.1
1
10
Ic=-10Ib
1000
o
o
Tj=25 C
Tj=125 C
100
o
Tj=-25 C
10
0.1
1
IC[A], COLLECTOR CURRENT
10
Ic[A], COLLECTOR CURRENT
Figure 3. DC current Gain ( O Grade )
Figure 4. Collector-Emitter Saturation Voltage
14
Ic=-10Ib
o
Tj=-25 C
12
IC[A], COLLECTOR CURRENT
Vbe(sat)[mV], SATURATION VOLTAGE
10000
o
Tj=25 C
1000
o
Tj=125 C
100
0.1
8
6
4
2
0
0.0
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
10
V BE [V], BASE-EMITTER VOLTAGE
Ic[A], COLLECTOR CURRENT
Figure 5. Base-Emitter Saturation Voltage
Figure 6. Base-Emitter On Voltage
© 2009 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. C
V CE = 5V
10
www.fairchildsemi.com
3
2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor
Typical Characteristics
IC MAX. (Pulsed*)
IC [A], COLLECTOR CURRENT
0.9
o
Transient Thermal Resistance, Rthjc[ C / W]
-100
1.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10ms*
-10
IC MAX. (DC)
100ms*
DC
-1
-0.1
*SINGLE NONREPETITIVE
o
PULSE TC=25[ C]
0.1
-0.01
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
1
10
100
VCE [V], COLLECTOR-EMITTER VOLTAGE
Pulse duration [sec]
Figure 7. Thermal Resistance
Figure 8. Safe Operating Area
160
PC[W], POWER DISSIPATION
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 9. Power Derating
© 2009 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. C
www.fairchildsemi.com
4
2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor
Typical Characteristics
2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor
Package Dimensions
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
3.50 ±0.20
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
16.50 ±0.30
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. C
www.fairchildsemi.com
5
2SA1962/FJA4213 PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. C
www.fairchildsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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