2SA2124-TD-E

Ordering number : EN7920B 2SA2124 Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP http://onsemi.com Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment • Features Adoption of MBIT processes Large current capacity • • • • Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage Unit --30 V --30 V VEBO IC ICP Collector Current Collector Current (Pulse) --6 V --2 A --5 A Continued on next page. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 2SA2124-TD-E 1.6 Marking AX Packing Type: TD 4.0 1.0 2.5 1.5 LOT No. 4.5 TD 1 2 3 0.4 0.4 0.5 1.5 3.0 Electrical Connection 2 0.75 1 1 : Base 2 : Collector 3 : Emitter Bottom View 3 PCP Semiconductor Components Industries, LLC, 2013 September, 2013 O1712 TKIM TC-00002827/80509 TKIM TC-00002048/D2004EA TSIM TB-00000072 No.7920-1/7 2SA2124 Continued from preceding page. Parameter Symbol Base Current Conditions Ratings IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Unit --400 mA When mounted on ceramic substrate (450mm2×0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage ICBO IEBO hFE1 VCE=--2V, IC=--100mA hFE2 VCE=--2V, IC=--1.5A fT VCE(sat) VCE=--10V, IC=--300mA Collector-to-Emitter Breakdown Voltage V(BR)CEO V(BR)EBO Cob Emitter-to-Base Breakdown Voltage Output Capacitance Turn-ON Time ton tstg tf Storage Time Fall Time Ratings min typ max VCB=--30V, IE=0A VEB=--4V, IC=0A VBE(sat) V(BR)CBO Collector-to-Base Breakdown Voltage Conditions 200 Unit --0.1 μA --0.1 μA 560 65 440 IC=--1.5A, IB=--75mA IC=--1.5A, IB=--75mA MHz --0.2 --0.4 --0.95 --1.2 V V IC=--10μA, IE=0A --30 V IC=--1mA, RBE=∞ IE=--10μA, IC=0A --30 V --6 VCB=--10V, f=1MHz See specified Test Circuit. V 17 pF 45 ns 200 ns 23 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT IC OUTPUT IB2 VR 50Ω RB + 220μF VBE=5V RL + 470μF VCC= --12V IC=20IB1= --20IB2= --0.5A Ordering Information Device 2SA2124-TD-E Package Shipping memo PCP 1,000pcs./reel Pb Free No.7920-2/7 2SA2124 IC -- VCE --3 5m A --3 0m Collector Current, IC -- A --1.6 A A --1.8 0m --25 --4 IC -- VBE --2.0 0mA --2 VCE= --2V --15mA --10mA --1.4 --1.2 --1.0 --5mA --0.8 --0.6 --2mA --1.5 --1.0 Ta= 75°C 25°C --25 °C mA Collector Current, IC -- A --2.0 --0.5 --0.4 --0.2 IB=0mA 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Collector-to-Emitter Voltage, VCE -- V 0 0 --2.0 --0.4 --0.6 --0.8 VCE= --10V Gain-Bandwidth Product, f T -- MHz VCE= --2V DC Current Gain, hFE Ta=75°C 25°C --25°C 2 100 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 5 3 2 100 7 5 --0.01 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 3 5 2 3 IT07251 --0.1 7 °C 75 C 5° --2 5 = Ta 3 °C 25 2 2 3 3 5 7 --1.0 2 5 ASO