Ordering number : EN7990A
2SA2126
Bipolar Transistor
http://onsemi.com
-50V, -3A, Low VCE(sat), PNP Single TP/TP-FA
Applications
•
DC / DC converter, relay drivers, lamp drivers, motor drivers
Features
•
•
Adoption of MBIT processes
Low collector-to-emitter saturation voltage
High current capacitance
High-speed switching
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
Unit
VCBO
VCES
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
VCEO
VEBO
IC
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
ICP
IB
Base Current
--50
V
--50
V
--50
V
--6
V
--3
A
--6
--600
A
mA
Continued on next page.
Package Dimensions unit : mm (typ)
Package Dimensions unit : mm (typ)
7518-003
7003-003
0.5
0.6
1
2
2.3
7.5
0.6
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
3
2.3
1
2
2.5
0.8
0.8
1.6
0.85
1.2
3
0 to 0.2
1.2
2.3
2SA2126-TL-E
2SA2126-TL-H
1.2
5.5
0.85
0.7
0.5
1.5
1.5
4
7.0
5.5
4
2.3
6.5
5.0
2SA2126-E
2SA2126-H
0.5
7.0
2.3
6.5
5.0
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP-FA
TP
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
2,4
A2126
LOT No.
TL
1
3
Semiconductor Components Industries, LLC, 2013
September, 2013
60612 TKIM TC-00002496/21505EA TSIM TB-00000214 No.7990-1/9
2SA2126
Continued from preceding page.
Parameter
Symbol
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Conditions
Ratings
Tc=25°C
Unit
0.8
W
15
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
VCE= --2V, IC= --100mA
Collector-to-Emitter Breakdown Voltage
VCE(sat)1
VCE(sat)2
--1
μA
μA
560
MHz
VCB= --10V, f=1MHz
IC= --1A, IB= --50mA
24
--135
--270
mV
IC= --2A, IB= --100mA
IC= --2A, IB= --100mA
--260
--520
mV
--0.96
--1.2
pF
V
IC= --10μA, IE=0A
--50
V
IC= --100μA, RBE=0
IC= --1mA, RBE=∞
--50
V
Storage Time
ton
tstg
See specified Test Circuit.
Fall Time
tf
Turn-On Time
Unit
--1
390
IE= --10μA, IC=0A
Emitter-to-Base Breakdown Voltage
max
200
V(BR)CES
V(BR)CEO
V(BR)EBO
Collector-to-Emitter Breakdown Voltage
typ
VCE= --10V, IC= --500mA
VBE(sat)
V(BR)CBO
Collector-to-Base Breakdown Voltage
Ratings
min
VCB= --40V, IE=0A
VEB= --4V, IC=0A
fT
Cob
Output Capacitance
Conditions
--50
V
--6
V
30
ns
230
ns
18
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C. 1%
IB2
OUTPUT
INPUT
VR
RB
+
50Ω
100μF
VBE=5V
RL
+
470μF
VCC= --25V
--10IB1=10IB2= IC= --1A
Ordering Information
Device
2SA2126-E
2SA2126-H
Package
Shipping
memo
TP
500pcs./bag
Pb Free
Pb Free and Halogen Free
TP
500pcs./bag
2SA2126-TL-E
TP-FA
700pcs./reel
Pb Free
2SA2126-TL-H
TP-FA
700pcs./reel
Pb Free and Halogen Free
No.7990-2/9
2SA2126
IC -- VCE
--5.0
VCE= --2V
mA 0mA
--20
mA
--150
mA
--100
--250
--2.5
--3.5
--50mA
--3.0
--20mA
--2.5
--2.0
--10mA
--1.5
--5mA
--1.0
--2.0
--1.5
Ta=
75°C
25°
C
--25
°C
--4.0
Collector Current, IC -- A
--4.5
Collector Current, IC -- A
IC -- VBE
--3.0
--1.0
--0.5
--0.5
IB=0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
Collector-to-Emitter Voltage, VCE -- V
0
0
--2.0
--0.4
--0.6
--0.8
VCE= --10V
VCE= --2V
Gain-Bandwidth Product, fT -- MHz
DC Current Gain, hFE
5
Ta=75°C
25°C
3
--25°C
2
100
7
5
3
--0.01
2
3
5
7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Output Capacitance, Cob -- pF
3
2
3
5 7 --1.0
2
3
5 7 --10
2
3
5 7 --100
IT07646
Collector-to-Base Voltage, VCB -- V
7
5
2
3
5 7 --0.1
2
3
5 7 --1.0
2
5
3
2
--0.1
7
C
5°
5°C
5
--2
=7
Ta
3
°C
25
2
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
2
--0.1
75
Ta=
7
5
°C
5
--2
°C
C
25°
3
3
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
7
5
5 7 --10
IT07645
IC / IB=20
5 7 --10
IT07647
VBE(sat) -- IC
3
--1.0
3
VCE(sat) -- IC
IC / IB=20
IC / IB=50
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
100
--0.01
--0.01
VCE(sat) -- IC
3
2
7
5
2
3
--1.0
f=1MHz
7
10
--0.1
5
Collector Current, IC -- A
Cob -- VCB
100
7
3
--0.01
5 7 --10
IT07644
--1.2
IT07643
fT -- IC
1000
7
--1.0
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
1000
--0.2
IT07642
2
--1.0
C
Ta= --25°
7
75°C
25°C
5
2
--0.01
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
3
5
7
IT07648
3
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
IT07649
No.7990-3/9
2SA2126
ASO
50
0μ
s
3
2
op
era
tio
n(
Ta
=2
5°
C)
5°
=2
(Tc
C)
--0.1
7
5
Collector Dissipation, PC -- W
DC
ion
rat
ope
--1.0
7
5
s
0μ
10
0m 10 1m
s ms s
0.8
10
IC= --3A
3
2
3
2
Tc=25°C
Single pulse
--0.01
--0.1
2
3
PC -- Ta
0.9
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