Ordering number : ENA0583A
2SA2202
Bipolar Transistor
–100V, –2A, Low VCE(sat) PNP Single PCP
http://onsemi.com
Applicaitons
DC / DC converters, relay drivers, lamp drivers, motor drivers, flash
•
Features
Adoption of FBET, MBIT processes
Low collector to emitter saturation voltage
High allowable power dissipation
•
•
•
•
•
Large current capacity
High-speed switching
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector to Base Voltage
Conditions
Ratings
Unit
VCBO
VCES
--100
V
--100
V
VCEO
--100
V
--7
V
Collector Current
VEBO
IC
--2
A
Collector Current (Pulse)
ICP
--3
A
Collector to Emitter Voltage
Emitter to Base Voltage
Continued on next page.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-004
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Top View
2SA2202-TD-E
Packing Type: TD
4.5
1.6
LOT No.
RC
2.5
2
4.0
1.0
1
Marking
1.5
TD
3
0.4
0.4
0.5
1.5
3.0
Electrical Connection
2
0.75
1
3
1 : Base
2 : Collector
3 : Emitter
Bottom View
PCP
Semiconductor Components Industries, LLC, 2014
January, 2014
13114 TKIM TC-00003092/D2706EA TIIM TC-00000421 No.A0583-1/4
2SA2202
Continued from preceding page.
Parameter
Symbol
Base Current
Conditions
Ratings
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Unit
--400
mA
When mounted on ceramic substrate (250mm2×0.8mm)
1.3
W
Tc=25°C
3.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
min
typ
max
VCB=--80V, IE=0A
VEB=--4V, IC=0A
VCE=--5V, IC=--100mA
VCE=--10V, IC=--500mA
fT
Cob
Output Capacitance
Ratings
Conditions
200
VCE(sat)
VBE(sat)
--1
μA
--1
μA
400
300
VCB=--10V, f=1MHz
IC=--1A, IB=--100mA
Unit
MHz
23
pF
--120
--240
mV
--0.85
--1.2
V
IC=--1A, IB=--100mA
IC=--10μA, IE=0A
--100
V
IC=--100μA, RBE=0Ω
--100
V
V(BR)CEO
IC=--1mA, RBE=∞
--100
V
V(BR)EBO
ton
IE=--10μA, IC=0A
tstg
tf
See specified Test Circuit.
V(BR)CBO
V(BR)CES
--7
V
40
ns
600
ns
30
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
OUTPUT
INPUT
VR
RB
RL=100Ω
+
50Ω
+
220μF
470μF
VBE=5V
VCC= --50V
IC=10IB1= --10IB2= --0.5A
Ordering Information
Package
Shipping
memo
PCP
1,000pcs./reel
Pb Free
--40mA
--18
--1.2
mA
--0.8
--20mA
IB= --5mA
--0.4
--1.6
--1.4
--1.2
--1.0
--0.8
Ta=75
°C
0m
A
--1
60
mA
--1
4
--100mA
--80mA
--60mA
Collector Current, IC -- A
0m
A
--1.8
--20
0
Collector Current, IC -- A
--1.6
VCE= --5V
A
0m
2
--1
IC -- VBE
--2.0
--0.6
--25°C
IC -- VCE
--2.0
25°C
Device
2SA2202-TD-E
--0.4
--0.2
0
0
0
--0.1
--0.2
--0.3
--0.4
Collector to Emitter Voltage, VCE -- V
--0.5
IT11879
0
--0.2
--0.4
--0.6
--0.8
Base to Emitter Voltage, VBE -- V
--1.0
IT11880
No.A0583-2/4
2SA2202
hFE -- IC
1000
DC Current Gain, hFE
5
Ta=75°C
25°C
--25°C
3
2
100
7
5
3
2
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Collector Current, IC -- A
5
3
2
--0.1
25
7
5
°C
5°C
5
7
Ta=
3
°C
--25
2
--0.01
7
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Cob -- VCB
2
Output Capacitance, Cob -- pF
Base to Emitter
Saturation Voltage, VBE(sat) -- V
f=1MHz
2
Ta= --25°C
7
75°C
25°C
5
5
IT11882
IC / IB=10
--1.0
3
Collector Current, IC -- A
IT11881
VBE(sat) -- IC
3
IC / IB=10
7
Collector to Emitter
Saturation Voltage, VCE(sat) -- V
7
VCE(sat) -- IC
--1.0
VCE= --5V
100
7
5
3
2
10
3
7
2
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Collector Current, IC -- A
3
Collector Current, IC -- A
7 --1.0
2
Collector Current, IC -- A
3
5
Tc=25°C
Single pulse
When mounted on ceramic substrate (250mm2✕0.8mm)
5 7--0.1 2 3
5 7--1.0 2 3
5 7--10
2 3
Collector to Emitter Voltage, VCE -- V
IT11885
5 7--100 2
IT11886
PC -- Tc
4.0
3.5
1.4
W
1.3
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
--0.1
7
5
--0.01
--0.01 2 3
PC -- Ta
1.6
μs
C)
5°
=2
C)
5°
=2
Ta
n(
5
Tc
3
n(
tio
2
2
2
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