2SA2222

2SA2222 Ordering number : ENA1148 SANYO Semiconductors DATA SHEET 2SA2222 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit --50 V Collector-to-Emitter Voltage VCBO VCEO --50 V Emitter-to-Base Voltage VEBO --6 V IC --10 A ICP --13 A Base Current IB --2 A Collector Dissipation PC 2 W Junction Temperature Tj Storage Temperature Tstg Collector Current Collector Current (Pulse) Tc=25°C 25 W 150 °C --55 to +150 °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32608FA TI IM TC-00001283 No. A1148-1/4 2SA2222 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current ICBO IEBO VCB=--40V, IE=0A VEB=--4V, IC=0A DC Current Gain hFE Gain-Bandwidth Product fT Cob VCE=--2V, IC=--270mA VCE=--10V, IC=--1A Output Capacitance Collector-to-Emitter Saturation Voltage typ Unit max 150 --10 μA --10 μA 450 230 MHz 115 --250 Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--6A, IB=--300mA IC=--100μA, IE=0A IC=--1mA, RBE=∞ Emitter-to-Base Breakdown Voltage Turn-ON Time V(BR)EBO ton IE=--100μA, IC=0A See specified Test Circuit. Storage Time tstg tf Fall Time min VCB=--10V, f=1MHz IC=--6A, IB=--300mA VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions pF --500 mV --1.2 V --50 V --50 V --6 V 40 ns See specified Test Circuit. 240 ns See specified Test Circuit. 22 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7508-002 4.5 10.0 2.8 3.2 IB2 VR RB RL + + 16.0 50Ω 18.1 100μF 470μF VBE=5V 0.7 1 2 3 1 : Base 2 : Collector 3 : Emitter 2.4 --7 --50mA --4.0 --30mA --100mA mA --200 --5 --20mA --4 --3 --10mA --2 --3.5 --7 0m A 0m A 0m A --4.5 --40mA --90mA --6 --70mA --60mA Collector Current, IC -- A --8 IC -- VCE --5.0 A --80m --1 5 mA --500mA--400 --9 SANYO : TO-220ML IC -- VCE --3 0 --10 2.55 --100m --90mA A 2.55 VCC= --20V IC=20IB1= --20IB2= --5A 14.0 5.6 1.6 1.2 0.75 Collector Current, IC -- A OUTPUT INPUT 7.2 3.5 IB1 PW=20μs D.C.≤1% A --30mA --35m --25mA A --40m --3.0 --2.5 --2.0 --1.5 --20mA A --45m --15mA A A--50m --60m --10mA A --80m --5mA --1.0 --0.5 --1 IB=0mA 0 0 --1 --2 --3 --4 Collector-to-Emitter Voltage, VCE -- V --5 IT13441 IB=0mA 0 0 --0.5 --1.0 --1.5 --2.0 Collector-to-Emitter Voltage, VCE -- V IT13442 No. A1148-2/4 2SA2222 IC -- VBE --25 hFE -- IC 1000 VCE= --2V VCE= --2V 7 Ta=75°C DC Current Gain, hFE --15 25° C --25°C --10 Ta= 75° C --5 --0.5 --1.5 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Gain-Bandwidth Product, fT -- MHz 7 5 V 100 2.0 V .7V --0.5 --0 V = -V CE 2 V --1.0 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector Current, IC -- A VCE= --10V 100 7 5 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 3 5 7 3 2 °C 25 Ta= -- °C 25 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 3 5 7 --0.1 5 7 --10 2 2 3 5 7 --1.0 2 3 5 7 --10 IT13446 VCE(sat) -- IC IC / IB=20 --1.0 7 5 3 2 --0.1 7 5 C 5° =7 a T C 5° --2 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 7 5 2 2 3 IT13448 VBE(sat) -- IC IC / IB=20 --1.0 C 75° 2 3 2 --0.1 3 IT13447 IC / IB=50 3 5 --0.01 7 5 --0.01 VCE(sat) -- IC 5 7 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 3 100 2 3 2 2 3 5 3 --0.1 3 IT13445 f=1MHz 5 IT13444 fT -- IC 10 --0.01 5 Cob -- VCB 7 2 3 Collector Current, IC -- A 5 --0.2 DC Current Gain, hFE 5 Ta=25°C 3 Output Capacitance, Cob -- pF 7 IT13443 hFE -- IC 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 100 10 --0.01 2 3 --2.0 Base-to-Emitter Voltage, VBE -- V --0.01 --0.01 2 2 --1.0 7 25°C --25°C 3 0 0 3 25 °C Collector Current, IC -- A 5 --20 3 IT13449 2 --1.0 Ta= --25°C 7 25°C 75°C 5 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 2 3 IT13450 No. A1148-3/4 2SA2222 Forward Bias A S O 3 2 ICP= --13A 10 0m s op ms 10 DC 3 2 era --1.0 Collector Dissipation, PC -- W μs 00 =5 PT IC= --10A 7 5 s 1m 7 5 n tio Collector Current, IC -- A --10 3 2 --0.1 7 5 3 2 Tc=25°C Single pulse --0.01 --0.1 2 3 2.0 1.5 No he at sin k 1.0 0.5 0 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 --100 IT13451 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT13452 PC -- Tc 30 Collector Dissipation, PC -- W PC -- Ta 2.5 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT13453 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2008. Specifications and information herein are subject to change without notice. PS No. A1148-4/4