2SB1201T-TL-E

Ordering number : EN2112C 2SB1201/2SD1801 Bipolar Transistor http://onsemi.com (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • • • Large current capacitance and wide ASO Adoption of FBET, MBIT processes • Fast switching speed Low collector-to-emitter saturation voltage Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller Specifications ( ): 2SB1201 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage Unit (--)60 V (--)50 V VEBO IC ICP Collector Current Collector Current (Pulse) (--)6 V (--)2 A (--)4 A Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003 0.5 1.5 0.5 1 2 2.3 7.5 0.8 1.6 0.6 0.5 3 2.3 0.6 1 : Base 2 : Collector 3 : Emitter 4 : Collector 1 2 2.5 1.2 0.8 0.85 0.85 0.7 3 0 to 0.2 1.2 2.3 2SB1201S-TL-E 2SB1201T-TL-E 2SD1801S-TL-E 2SD1801T-TL-E 1.2 4 5.5 5.5 4 2.3 6.5 5.0 2SB1201S-E 2SB1201T-E 2SD1801S-E 2SD1801T-E 7.0 1.5 0.5 7.0 2.3 6.5 5.0 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector TP-FA TP Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Marking (TP, TP-FA) Packing Type (TP-FA) : TL Electrical Connection 2,4 B1201 RANK LOT No. 2,4 D1801 RANK LOT No. 1 1 TL 2SB1201 3 2SD1801 3 Semiconductor Components Industries, LLC, 2013 September, 2013 60612 TKIM TB-00000906, TA-4180/10904TN (KT)/92098HA (KT)/8259MO/4137KI/4076KI, TS No.2112-1/10 2SB1201 / 2SD1801 Continued from preceding page. Parameter Symbol Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Conditions Ratings Tc=25°C Unit 0.8 W 15 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE1 Emitter Cutoff Current DC Current Gain hFE2 Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ Unit VCB=(--)50V, IE=0A (--)100 nA VEB=(--)4V, IC=0A (--)100 nA VCE=(--)2V, IC=(--)100mA 100* VCE=(--)2V, IC=(--)1.5A VCE=(--)10V, IC=(--)50mA 40 560* 150 VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)50mA VCE(sat) VBE(sat) max MHz (22)12 pF (--0.3)0.15 (--0.7)0.4 V (--)0.9 (--)1.2 V VCE=(--)1A, IC=(--)50mA IC=(--)10μA, IE=0A (--)60 V IC=(--)1mA, RBE=∞ (--)50 V V(BR)EBO ton IE=(--)10μA, IC=0A (--)6 tstg tf See specified Test Circuit. V(BR)CBO V(BR)CEO V 60 ns (450)550 ns 30 ns * : The 2SB1201/2SD1801 are classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit IB1 PW=20μs D.C.b1% INPUT OUTPUT IB2 VR RB RL 25Ω 50Ω + 100μF VBE= --5V + 470μF VCC=25V IC=10IB1= --10IB2=500mA, VCC=25V For PNP, the polarity is reversed. Ordering Information Package Shipping 2SB1201S-E Device TP 500pcs./bag 2SB1201T-E TP 500pcs./bag 2SD1801S-E TP 500pcs./bag 2SD1801T-E TP 500pcs./bag 2SB1201S-TL-E TP-FA 700pcs./reel 2SB1201T-TL-E TP-FA 700pcs./reel 2SD1801S-TL-E TP-FA 700pcs./reel 2SD1801T-TL-E TP-FA 700pcs./reel memo Pb Free No.2112-2/10 2SB1201 / 2SD1801 IC -- VCE --2.4 Collector Current, IC -- A --5 0m A Collector Current, IC -- A --20 --10mA --1.2 --8mA --6mA --0.8 --4mA --2mA --0.4 --0.4 --0.8 --1.2 --1.6 --2.0 Collector-to-Emitter Voltage, VCE -- V --2mA --1mA --200 0 0.8 4mA 2mA IB=0 0 IB=0 0 --2 --4 --6 --8 --10 2.0 2.4 ITR09145 2SD1801 5mA 4mA 3mA 600 2mA 400 1mA IB=0 0 2 4 6 8 10 12 Collector-to-Emitter Voltage, VCE -- V ITR09147 IC -- VBE IC -- VBE 2.4 2SB1201 VCE= --2V 2SD1801 VCE=2V --1.6 --1.2 --0.8 --0.4 0 --0.2 --0.4 --0.6 1.2 0.8 0.4 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 1.6 Ta= 7 25° 5°C C --25° C Collector Current, IC -- A 2.0 Ta= 75 25°C °C --25° C Collector Current, IC -- A 1.6 7mA 6mA 800 0 --12 --2.0 0 --1.2 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V ITR09148 2SD1801 VCE=2V 7 5 Ta=75°C 3 2 DC Current Gain, hFE 5 1.2 ITR09149 hFE -- IC 1000 2SB1201 VCE= --2V 7 DC Current Gain, hFE 1.2 200 --2.4 25°C --25°C 100 7 3 100 7 5 3 3 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 ITR09150 Ta=75°C 25°C --25°C 2 5 2 0.8 IC -- VCE Collector-to-Emitter Voltage, VCE -- V ITR09146 0 0.4 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- mA Collector Current, IC -- mA --3mA --400 8mA 1000 --4mA --600 1.2 1200 --5mA --800 15mA ITR09144 2SB1201 --7mA --6mA --1000 1.6 0 --2.4 IC -- VCE --1200 25mA 0.4 IB=0 0 0mA 4 2.0 mA --1.6 2SD1801 A 50m --2.0 0 IC -- VCE 2.4 2SB1201 2 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 ITR09151 No.2112-3/10 2SB1201 / 2SD1801 f T -- IC 1000 5 3 2 100 7 5 3 2 10 --10 2 3 5 7 --100 2 3 5 7 --1000 2 Collector Current, IC -- A 5 3 2 2 3 5 7 100 2 3 5 7 1000 3 2 10 2 3 ITR09153 Cob -- VCB 2SD1801 f=1MHz 7 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 7 100 5 5 3 2 10 7 5 --1.0 2 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC --1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 --100 7 25 5 °C C 75° Ta= °C --25 3 2 5 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A VBE(sat) -- IC --10 2 25°C 7 75°C 5 5 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 2 7 2 10 3 3 ITR09158 5 7 100 ITR09155 VCE(sat) -- IC 5 3 2 100 7 5 25 3 °C C Ta=75° 2 --25° 5 7 0.01 2 3 5 C 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 ITR09157 VBE(sat) -- IC 2SD1801 IC / IB=20 7 3 Ta= --25°C 5 10 5 --1.0 3 2SD1801 IC / IB=20 7 10 7 --1.0 2 3 ITR09156 2SB1201 IC / IB=20 7 2 Collector-to-Base Voltage, VCB -- V 1000 2SB1201 IC / IB=20 7 5 1.0 7 --100 ITR09154 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 100 Collector Current, IC -- A 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 10 2SB1201 f=1MHz 7 3 3 10 3 100 --10 5 ITR09152 Cob -- VCB 2 2SD1801 VCB=10V 7 Gain-Bandwidth Product, f T -- MHz Gain-Bandwidth Product, f T -- MHz 7 f T -- IC 1000 2SB1201 VCB=10V 5 3 2 1.0 25°C Ta= --25°C 7 75°C 5 3 5 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 ITR09159 No.2112-4/10 2SB1201 / 2SD1801 ASO 5 tio °C 25 nT a= 25 °C 0.1 7 5 ms op era 2 10 0 3 c= nT tio DC era op Collector Current, IC -- A s 10m DC 1.0 7 5 2SB1201 / 2SD1801 Tc=25°C Single pulse For PNP, the minus sign is omitted. 3 2 2 3 5 1.0 2 3 5 7 10 Collector Dissipation, PC -- W 14 2 0.01 2SB1201 / 2SD1801 15 s 3 PC -- Ta 16 1m 12 Id ea lh 10 ea td iss 8 ip 2 3 5 7 100 ITR09160 io 6 n 4 2 Collector-to-Emitter Voltage, VCE -- V at 0.8 0 No heat sink 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR09161 No.2112-5/10 2SB1201 / 2SD1801 Taping Specification 2SB1201S-TL-E, 2SB1201T-TL-E, 2SD1801S-TL-E, 2SD1801T-TL-E No.2112-6/10 2SB1201 / 2SD1801 Outline Drawing Land Pattern Example 2SB1201S-TL-E, 2SB1201T-TL-E, 2SD1801S-TL-E, 2SD1801T-TL-E Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.2112-7/10 2SB1201 / 2SD1801 Bag Packing Specification 2SB1201S-E, 2SB1201T-E, 2SD1801S-E, 2SD1801T-E No.2112-8/10 2SB1201 / 2SD1801 Outline Drawing 2SB1201S-E, 2SB1201T-E, 2SD1801S-E, 2SD1801T-E Mass (g) Unit 0.315 mm * For reference No.2112-9/10 2SB1201 / 2SD1801 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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