2SB1202S-TL-E

2SB1202/2SD1802 Bipolar Transistor (–)50 V, (–)3 A, Low VCE(sat) (PNP)NPN Single TP/TP−FA Features • • • • • • www.onsemi.com Adoption of FBET and MBIT Processes Large Current Capacitance and Wide ASO Low Collector to Emitter Saturation Voltage Fast Switching Speed Small and Slim Package Making it Easy to Make 2SB1202/2SD1802−used Sets Smaller These Devices are Pb−Free and are RoHS Compliant 2.4 1 3 (For PNP, the polarity is reversed.) Applications • Voltage Regulators, Relay Drivers, Lamp Drivers, Electrical Equipment ABSOLUTE MAXIMUM RATINGS at TA = 25°C Parameter Symbol Conditions Ratings Unit Collector to Base Voltage VCBO (−)60 V Collector to Emitter Voltage VCEO (−)50 V Emitter to Base Voltage VEBO (−)6 V Collector Current IC (−)3 A Collector Current (Pulse) ICP (−)6 A Collector Dissipation PC 1 W 15 W TC = 25°C Junction Temperature TJ 150 °C Storage Temperature TSTG − 55 to +150 °C IPAK / TP CASE 369AJ DPAK / TP−FA CASE 369AH MARKING DIAGRAM B1202 D1802 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2013 March, 2019 − Rev. 0 1 Publication Order Number: 2SB1202/D 2SB1202/2SD1802 ELECTRICAL CHARACTERISTICS at TA = 25°C Ratings Max Unit VCB = (-)40 V, IE = 0 A (-)1 mA IEBO VEB = (-)4V, IC = 0 A (-)1 mA hFE1 VCE = (-)2 V, IC = (-)100 mA 100* hFE2 VCE = (-)2 V, IC = (-)3 A 35 fT VCE = (-)10 V, IC = (-)50 mA 150 MHz Cob VCB = (-)10 V, f = 1 MHz (39)25 pF Collector to Emitter Saturation Voltage VCE(sat) IC = (-)2 A, IB = (-)100 mA (−0.35)0.19 (-0.7)0.5 V Base to Emitter Saturation Voltage VBE(sat) VCE = (-)2 V, IC = (-)100 mA (-)0.94 (-)1.2 V Collector to Base Breakdown Voltage V(BR)CBO IC = (-)10 mA, IE = 0 A (-)60 V Collector to Emitter Breakdown Voltage V(BR)CEO IC = (-)1 mA, RBE = W (-)50 V Emitter to Base Breakdown Voltage V(BR)EBO IE = (-)10 mA, IC = 0 A (-)6 V Turn−On Time ton See specified Test Circuit Storage Time Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current DC Current Gain Gain−Bandwidth Product Output Capacitance Fall Time Min Typ 560* 70 ns tstg (450)650 ns tf 35 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *The 2SB1202/2SD1802 are classified by 100 mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit IB1 PW = 20 ms D.C. ≤1% INPUT OUTPUT IB2 VR 50 W RB + 100 mF VBE = −5 V RL 25 W + 470 mF VCC = 25 V IC = 10 IB1= −10 IB2 = 1 A For PNP, the polarity is reversed. www.onsemi.com 2 2SB1202/2SD1802 TYPICAL CHARACTERISTICS −5 5 2SB1202 4 Collector Current, IC (A) −4 Collector Current, IC (A) 2SD1802 −3 −2 −1 IB = 0 0 0 −0.4 −0.8 −1.2 −1.6 3 2 1 IB = 0 0 −2.0 0 Collector to Emitter Voltage, VCE (V) 0.4 2.0 2SD1802 1.6 −1.6 Collector Current, IC (A) Collector Current, IC (A) 2.0 2SB1202 −1.2 −.0.8 −0.4 IB = 0 0 −0.4 −0.8 −1.2 −1.6 1.2 0.8 0.4 0 −2.0 IB = 0 0 4 8 12 16 Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) Figure 3. IC − VCE Figure 4. IC − VCE −3.6 3.6 2SB1202 VCE = −2 V −3.2 −2.8 −2.4 −2.0 −1.6 −1.2 −0.8 20 2SD1802 VCE = 2 V 3.2 Collector Current, IC (A) Collector Current, IC (A) 1.6 Figure 2. IC − VCE −2.0 2.8 2.4 2.0 1.6 1.2 0.8 0.4 −0.4 0 1.2 Collector to Emitter Voltage, VCE (V) Figure 1. IC − VCE 0 0.8 0 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 0 Base to Emitter Voltage, VBE (V) 0.2 0.4 0.6 0.8 Base to Emitter Voltage, VBE (V) Figure 5. IC − VBE Figure 6. IC − VBE www.onsemi.com 3 1.0 1.2 2SB1202/2SD1802 TYPICAL CHARACTERISTICS (continued) 1000 5 3 2 5 3 2 100 100 7 7 5 5 7 −0.01 2 3 5 7 −0.1 2 3 5 7 −1.0 2 3 2SD1802 VCE = 2 V 7 DC Current Gain, hFE DC Current Gain, hFE 1000 2SB1202 VCE = −2 V 7 5 5 5 7 0.01 2 3 5 7 0.1 Collector Current, IC (A) Figure 7. hFE − IC Gain−Bandwidth Product, fT (MHz) Gain−Bandwidth Product, fT (MHz) 5 3 2 100 7 5 3 2 3 5 7 −0.1 2 3 5 7 −1.0 2 5 2 100 7 5 3 2 10 0.01 3 2 3 5 2 100 7 5 3 2 2 0.1 2 3 5 7 5 Output Capacitance, Cob (pF) Output Capacitance, Cob (pF) 3 7 −10 7 1.0 2 3 Figure 10. fT − IC 2SB1202 f = 1 MHz 5 5 Collector Current, IC (A) 5 3 3 3 Figure 9. fT − IC 2 2 2SD1802 VCE = 10 V 7 Collector Current, IC (A) 10 −1.0 5 7 1.0 1000 2SB1202 VCE = −10 V 7 2 3 Figure 8. hFE − IC 1000 10 −0.01 2 Collector Current, IC (A) 3 5 2 100 7 5 3 2 10 7 −100 2SD1802 f = 1 MHz 3 1.0 2 3 5 7 10 2 3 Collector to Base Voltage, VCB (V) Collector to Base Voltage, VCB (V) Figure 11. Cob − VCB Figure 12. Cob − VCB www.onsemi.com 4 5 7 100 2SB1202/2SD1802 −1000 5 3 2 −100 7 5 3 2 −10 7 −0.01 2 3 5 7−0.1 2 3 5 7 −1.0 3 2 Collector to Emitter Saturation Voltage, VBE(sat) (mV) 7 5 2 3 5 7 −0.1 2 3 5 7−1.0 2 3 5 7 0.1 2 3 5 7 1.0 2 1.0 7 5 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Figure 16. VBE(sat) − IC 16 5 3 2 0.1 5 Tc = 25°C Single pulse For PNP, the minus sign is omitted. 7 1.0 2 3 5 7 10 2 3 5 5 10 8 6 4 2 1 Collector to Emitter Voltage, VCE (V) 0 20 40 60 80 100 120 Ambient Temperature, TA (°C) Figure 17. ASO Figure 18. PC − TA www.onsemi.com 5 3 12 0 7 100 2 2SB1202 / 2SD1802 15 14 1.0 5 3 Figure 15. VBE(sat) − IC IC = 3 A 3 5 Collector Current, IC (A) 2SB1202 / 2SD1802 2 2SD1667 2SD1802 I C / I B = 20 7 3 5 2 5 3 Collector Current, IC (A) ICP = 6 A 3 2 10 2SB1202 I C / IB = 20 5 7 −0.01 7 0.01 Figure 14. VCE(sat) − IC −1.0 0.01 3 Figure 13. VCE(sat) − IC 2 2 5 5 3 3 7 5 Collector Dissipation, PC (W) Collector to Emitter Saturation Voltage, VBE(sat) (mV) Collector Current, IC (A) 2 5 3 2 Collector Current, IC (A) 7 5 3 Collector Current, IC (A) −10 10 5 10 5 3 2SD1802 I C / I B = 20 7 Collector to Emitter Saturation Voltage, VCE(sat) (mV) Collector to Emitter Saturation Voltage, VCE(sat) (mV) 1000 2SB1202 I C / IB = 20 7 140 160 2SB1202/2SD1802 ORDERING INFORMATION Device Package Shipping† memo 2SB1202S−E TP 500pcs./bag Pb−Free 2SB1202T−E TP 500pcs./bag 2SD1802S−E TP 500pcs./bag 2SD1802T−E TP 500pcs./bag 2SB1202S−TL−E TP−FA 700pcs./reel 2SB1202T−TL−E TP−FA 700pcs./reel 2SD1802S−TL−E TP−FA 700pcs./reel 2SD1802T−TL−E TP−FA 700pcs./reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK / TP−FA CASE 369AH ISSUE O DOCUMENT NUMBER: 98AON66236E DESCRIPTION: DPAK / TP−FA DATE 30 JAN 2012 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS IPAK / TP CASE 369AJ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON66237E IPAK / TP DATE 30 JAN 2012 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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