2SB1202/2SD1802
Bipolar Transistor
(–)50 V, (–)3 A, Low VCE(sat) (PNP)NPN
Single TP/TP−FA
Features
•
•
•
•
•
•
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Adoption of FBET and MBIT Processes
Large Current Capacitance and Wide ASO
Low Collector to Emitter Saturation Voltage
Fast Switching Speed
Small and Slim Package Making it Easy to Make
2SB1202/2SD1802−used Sets Smaller
These Devices are Pb−Free and are RoHS Compliant
2.4
1
3
(For PNP, the polarity is reversed.)
Applications
• Voltage Regulators, Relay Drivers, Lamp Drivers, Electrical
Equipment
ABSOLUTE MAXIMUM RATINGS at TA = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector to Base Voltage
VCBO
(−)60
V
Collector to Emitter Voltage
VCEO
(−)50
V
Emitter to Base Voltage
VEBO
(−)6
V
Collector Current
IC
(−)3
A
Collector Current (Pulse)
ICP
(−)6
A
Collector Dissipation
PC
1
W
15
W
TC = 25°C
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
− 55 to
+150
°C
IPAK / TP
CASE 369AJ
DPAK / TP−FA
CASE 369AH
MARKING DIAGRAM
B1202
D1802
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
March, 2019 − Rev. 0
1
Publication Order Number:
2SB1202/D
2SB1202/2SD1802
ELECTRICAL CHARACTERISTICS at TA = 25°C
Ratings
Max
Unit
VCB = (-)40 V, IE = 0 A
(-)1
mA
IEBO
VEB = (-)4V, IC = 0 A
(-)1
mA
hFE1
VCE = (-)2 V,
IC = (-)100 mA
100*
hFE2
VCE = (-)2 V,
IC = (-)3 A
35
fT
VCE = (-)10 V,
IC = (-)50 mA
150
MHz
Cob
VCB = (-)10 V,
f = 1 MHz
(39)25
pF
Collector to Emitter Saturation Voltage
VCE(sat)
IC = (-)2 A,
IB = (-)100 mA
(−0.35)0.19
(-0.7)0.5
V
Base to Emitter Saturation Voltage
VBE(sat)
VCE = (-)2 V,
IC = (-)100 mA
(-)0.94
(-)1.2
V
Collector to Base Breakdown Voltage
V(BR)CBO
IC = (-)10 mA, IE = 0 A
(-)60
V
Collector to Emitter Breakdown Voltage
V(BR)CEO
IC = (-)1 mA, RBE = W
(-)50
V
Emitter to Base Breakdown Voltage
V(BR)EBO
IE = (-)10 mA, IC = 0 A
(-)6
V
Turn−On Time
ton
See specified Test
Circuit
Storage Time
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
Emitter Cutoff Current
DC Current Gain
Gain−Bandwidth Product
Output Capacitance
Fall Time
Min
Typ
560*
70
ns
tstg
(450)650
ns
tf
35
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*The 2SB1202/2SD1802 are classified by 100 mA hFE as follows :
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
Switching Time Test Circuit
IB1
PW = 20 ms
D.C. ≤1%
INPUT
OUTPUT
IB2
VR
50 W
RB
+
100 mF
VBE = −5 V
RL
25 W
+
470 mF
VCC = 25 V
IC = 10 IB1= −10 IB2 = 1 A
For PNP, the polarity is reversed.
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2
2SB1202/2SD1802
TYPICAL CHARACTERISTICS
−5
5
2SB1202
4
Collector Current, IC (A)
−4
Collector Current, IC (A)
2SD1802
−3
−2
−1
IB = 0
0
0
−0.4
−0.8
−1.2
−1.6
3
2
1
IB = 0
0
−2.0
0
Collector to Emitter Voltage, VCE (V)
0.4
2.0
2SD1802
1.6
−1.6
Collector Current, IC (A)
Collector Current, IC (A)
2.0
2SB1202
−1.2
−.0.8
−0.4
IB = 0
0
−0.4
−0.8
−1.2
−1.6
1.2
0.8
0.4
0
−2.0
IB = 0
0
4
8
12
16
Collector to Emitter Voltage, VCE (V)
Collector to Emitter Voltage, VCE (V)
Figure 3. IC − VCE
Figure 4. IC − VCE
−3.6
3.6
2SB1202
VCE = −2 V
−3.2
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
20
2SD1802
VCE = 2 V
3.2
Collector Current, IC (A)
Collector Current, IC (A)
1.6
Figure 2. IC − VCE
−2.0
2.8
2.4
2.0
1.6
1.2
0.8
0.4
−0.4
0
1.2
Collector to Emitter Voltage, VCE (V)
Figure 1. IC − VCE
0
0.8
0
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
0
Base to Emitter Voltage, VBE (V)
0.2
0.4
0.6
0.8
Base to Emitter Voltage, VBE (V)
Figure 5. IC − VBE
Figure 6. IC − VBE
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3
1.0
1.2
2SB1202/2SD1802
TYPICAL CHARACTERISTICS (continued)
1000
5
3
2
5
3
2
100
100
7
7
5
5
7 −0.01
2
3
5 7 −0.1
2
3
5 7 −1.0
2
3
2SD1802
VCE = 2 V
7
DC Current Gain, hFE
DC Current Gain, hFE
1000
2SB1202
VCE = −2 V
7
5
5
5
7 0.01
2
3
5 7 0.1
Collector Current, IC (A)
Figure 7. hFE − IC
Gain−Bandwidth Product, fT (MHz)
Gain−Bandwidth Product, fT (MHz)
5
3
2
100
7
5
3
2
3
5
7 −0.1
2
3
5
7 −1.0
2
5
2
100
7
5
3
2
10
0.01
3
2
3
5
2
100
7
5
3
2
2
0.1
2
3
5
7
5
Output Capacitance, Cob (pF)
Output Capacitance, Cob (pF)
3
7 −10
7
1.0
2
3
Figure 10. fT − IC
2SB1202
f = 1 MHz
5
5
Collector Current, IC (A)
5
3
3
3
Figure 9. fT − IC
2
2
2SD1802
VCE = 10 V
7
Collector Current, IC (A)
10
−1.0
5 7 1.0
1000
2SB1202
VCE = −10 V
7
2
3
Figure 8. hFE − IC
1000
10
−0.01
2
Collector Current, IC (A)
3
5
2
100
7
5
3
2
10
7 −100
2SD1802
f = 1 MHz
3
1.0
2
3
5
7
10
2
3
Collector to Base Voltage, VCB (V)
Collector to Base Voltage, VCB (V)
Figure 11. Cob − VCB
Figure 12. Cob − VCB
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4
5
7
100
2SB1202/2SD1802
−1000
5
3
2
−100
7
5
3
2
−10
7 −0.01 2
3
5
7−0.1
2
3
5 7 −1.0
3
2
Collector to Emitter
Saturation Voltage, VBE(sat) (mV)
7
5
2
3
5
7 −0.1
2
3
5
7−1.0
2
3
5
7
0.1
2
3
5 7 1.0
2
1.0
7
5
5 7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
Figure 16. VBE(sat) − IC
16
5
3
2
0.1
5
Tc = 25°C
Single pulse
For PNP, the minus sign is omitted.
7 1.0
2
3
5
7 10
2
3
5
5
10
8
6
4
2
1
Collector to Emitter Voltage, VCE (V)
0
20
40
60
80
100
120
Ambient Temperature, TA (°C)
Figure 17. ASO
Figure 18. PC − TA
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5
3
12
0
7 100
2
2SB1202 / 2SD1802
15
14
1.0
5
3
Figure 15. VBE(sat) − IC
IC = 3 A
3
5
Collector Current, IC (A)
2SB1202 / 2SD1802
2
2SD1667
2SD1802
I C / I B = 20
7
3
5
2
5
3
Collector Current, IC (A)
ICP = 6 A
3
2
10
2SB1202
I C / IB = 20
5 7 −0.01
7 0.01
Figure 14. VCE(sat) − IC
−1.0
0.01
3
Figure 13. VCE(sat) − IC
2
2
5
5
3
3
7
5
Collector Dissipation, PC (W)
Collector to Emitter
Saturation Voltage, VBE(sat) (mV)
Collector Current, IC (A)
2
5
3
2
Collector Current, IC (A)
7
5
3
Collector Current, IC (A)
−10
10
5
10
5
3
2SD1802
I C / I B = 20
7
Collector to Emitter
Saturation Voltage, VCE(sat) (mV)
Collector to Emitter
Saturation Voltage, VCE(sat) (mV)
1000
2SB1202
I C / IB = 20
7
140
160
2SB1202/2SD1802
ORDERING INFORMATION
Device
Package
Shipping†
memo
2SB1202S−E
TP
500pcs./bag
Pb−Free
2SB1202T−E
TP
500pcs./bag
2SD1802S−E
TP
500pcs./bag
2SD1802T−E
TP
500pcs./bag
2SB1202S−TL−E
TP−FA
700pcs./reel
2SB1202T−TL−E
TP−FA
700pcs./reel
2SD1802S−TL−E
TP−FA
700pcs./reel
2SD1802T−TL−E
TP−FA
700pcs./reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK / TP−FA
CASE 369AH
ISSUE O
DOCUMENT NUMBER:
98AON66236E
DESCRIPTION:
DPAK / TP−FA
DATE 30 JAN 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
IPAK / TP
CASE 369AJ
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON66237E
IPAK / TP
DATE 30 JAN 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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© Semiconductor Components Industries, LLC, 2019
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