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2SB1215S-TL-H

2SB1215S-TL-H

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT428

  • 描述:

    TRANS PNP 100V 3A TP-FA

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB1215S-TL-H 数据手册
Ordering number : EN2539C 2SB1215/2SD1815 Bipolar Transistor http://onsemi.com (–)100V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features • • • • • Excllent linearity of hFE Low collector to emitter saturation voltage Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • Fast switching time High fT Halogen free compliance Specifications ( ): 2SB1215 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Conditions Ratings Unit VCBO VCEO (--)120 (--)100 V (--)6 V Collector Current VEBO IC (--)3 A Collector Current (Pulse) ICP (--)6 A Collector to Emitter Voltage Emitter to Base Voltage V Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003 0.6 1 2 2.3 1 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 2 1.2 0.5 0.85 2SB1215S-TL-E 2SB1215S-TL-H 2SB1215T-TL-E 2SB1215T-TL-H 2SD1815S-TL-E 2SD1815S-TL-H 2SD1815T-TL-E 2SD1815T-TL-H 3 0 to 0.2 0.6 0.5 3 0.5 1.5 5.5 4 2.5 1.2 7.5 0.8 1.6 0.85 0.7 2.3 6.5 5.0 0.8 1.5 7.0 5.5 4 2SB1215S-E 2SB1215S-H 2SB1215T-E 2SB1215T-H 2SD1815S-E 2SD1815S-H 2SD1815T-E 2SD1815T-H 0.5 7.0 2.3 6.5 5.0 1.2 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector TP-FA TP Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Marking (TP, TP-FA) Packing Type (TP-FA) : TL Electrical Connection 2,4 B1215 D1815 1 RANK LOT No. 2,4 RANK LOT No. 1 TL 2SB1215 3 2SD1815 3 Semiconductor Components Industries, LLC, 2013 November, 2013 N2713 TKIM TC-00003057/N2503TN (KT)/92098HA (KT)/40196TS (KOTO) 8-9913/8229MO/4097TA, TS No.2539-1/7 2SB1215/2SD1815 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 1 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C W 20 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector to Emitter Saturation Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Turn-On Time Storage Time Fall Time typ max VCB=(--)100V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)0.5A hFE2 VCE=(--)5V, IC=(--)2A fT Cob VCE=(--)10V, IC=(--)0.5A (130)180 VCB=(--)10V, f=1MHz IC=(--)1.5A, IB=(--)0.15A (40)25 V(BR)CBO V(BR)CEO Collector to Emitter Breakdown Voltage Ratings min ICBO IEBO hFE1 VCE(sat) VBE(sat) Base to Emitter Saturation Voltage Conditions 140* Unit (--)1 μA (--)1 μA 400* 40 MHz pF (--200)150 (--500)400 (--)0.9 (--)1.2 mV IC=(--)1.5A, IB=(--)0.15A IC=(--)10μA, IE=0A (--)120 V IC=(--)1mA, RBE=∞ (--)100 V V(BR)EBO ton IE=(--)10μA, IC=0A (--)6 tstg tf See specified Test Circuit. V V 100 ns (800)900 ns 50 ns * : The 2SB1215/2SD1815 are classified by 0.5A hFE as follows : Rank S T hFE 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20Ms D.C.b1% OUTPUT IB2 INPUT VR RB 507 + 100MF VBE= --5V + 470MF VCC=50V IC=10IB1= --10IB2=1.5A For PNP, the polarity is reversed. Ordering Information Package Shipping memo 2SB1215S-E Device TP 500pcs./bag Pb Free 2SB1215S-H TP 500pcs./bag Pb Free and Halogen Free 2SB1215T-E TP 500pcs./bag Pb Free 2SB1215T-H TP 500pcs./bag Pb Free and Halogen Free 2SD1815S-E TP 500pcs./bag Pb Free 2SD1815S-H TP 500pcs./bag Pb Free and Halogen Free 2SD1815T-E TP 500pcs./bag Pb Free 2SD1815T-H TP 500pcs./bag Pb Free and Halogen Free 2SB1215S-TL-E TP-FA 700pcs./reel Pb Free 2SB1215S-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SB1215T-TL-E TP-FA 700pcs./reel Pb Free 2SB1215T-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SD1815S-TL-E TP-FA 700pcs./reel Pb Free 2SD1815S-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SD1815T-TL-E TP-FA 700pcs./reel Pb Free 2SD1815T-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free No.2539-2/7 2SB1215/2SD1815 IC -- VCE --1 6m A Collector Current, IC -- A --1.6 A 0m A --2 8m --1 --8mA --1.2 --6mA --4mA --2mA --0.4 0 --1 --2 --3 --2.0mA --1.5mA --0.4 --1.0mA --10 --20 --30 5 ITR09234 IC -- VCE 2SD1815 A 4.5m 4.0mA 0.8 3.5mA 3.0mA 0.6 2.5mA 2.0mA 0.4 1.5mA 1.0mA IB=0 0 --50 10 Ta=7 5°C 25°C --25°C --2.0 --1.0 30 40 50 ITR09236 IC -- VBE 3.5 2SD1815 VCE=5V 3.0 Collector Current, IC -- A --2.5 20 Collector to Emitter Voltage, VCE -- V ITR09235 --0.5 2.5 2.0 1.5 1.0 0.5 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base to Emitter Voltage, VBE -- V --1.2 0 Ta=75°C 25°C 2 --25°C 5 3 2 7 5 3 2 7 5 3 5 --0.1 2 3 5 --1.0 Collector Current, IC -- A 2 3 5 --10 ITR09239 Ta=75°C 25°C --25°C 100 5 2 1.2 ITR09238 2SD1815 VCE=5V 2 10 --0.01 1.0 5 10 5 0.8 7 3 100 0.6 hFE -- IC 1000 DC Current Gain, hFE 3 0.4 Base to Emitter Voltage, VBE -- V 2SB1215 VCE= --5V 5 0.2 ITR09237 hFE -- IC 1000 DC Current Gain, hFE 4 0.5mA 2SB1215 VCE= --5V --1.5 3 0.2 IC -- VBE --3.0 2 0 --40 Collector to Emitter Voltage, VCE -- V --3.5 IB=0 1 A 5.0m IB=0 0 2mA 1.0 --0.5mA 0 4mA Collector to Emitter Voltage, VCE -- V Collector Current, IC -- A Collector Current, IC -- A A --2.5m --0.2 0.8 0 2SB1215 --0.6 6mA ITR09233 mA --4.0 mA --3.5 A --3.0m 12mA 10mA 8mA 1.2 --5 IC -- VCE --0.8 1.6 0 --4 Collector to Emitter Voltage, VCE -- V --1.0 A mA 8m 20 A1 m A 16 14m 0.4 IB=0 0 Collector Current, IC -- A 2SD1815 --10mA --0.8 IC -- VCE 2.0 --14mA --12mA Ta=75 °C 25°C --25°C 2SB1215 Collector Current, IC -- A --2.0 5 0.01 2 3 5 0.1 2 3 5 1.0 Collector Current, IC -- A 2 3 5 10 ITR09240 No.2539-3/7 2SB1215/2SD1815 VCE=5V 800 600 400 200 0 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage, VBE -- V 1.2 2 10V 100 V =2 E 7 5 5V VC DC Current Gain, hFE 3 3 2 10 7 5 3 5 7 10 2 3 5 7 100 2 3 5 Collector Current, IC -- mA 2 10 7 5 3 2 1.0 7 1.0 2 3 5 7 2 10 3 5 7 2 100 ITR03223 f T -- IC 7 5 3 2 1000 Collector Current, IC -- mA 3 2 1.0 5 3 2 0.1 2 5 3 5 Collector Current, IC -- mA 7 1000 2 ITR03228 7 2 100 5 7 1000 ITR03227 3 SOA ICP=1.5A IC=0.7A 0m s DC op era tio 3 2 3 1.0 Ta=25°C Single pulse 1m 10 s ms 10 5 5 7 100 3 100 3 5 2 10 3 2 10 3 7 5 5 2 5 5 3 2 5 7 10 5V 100 5 3 V V CE=10 2 Collector Current, IC -- mA IC / IB=10 2 5 3 10 7 1000 2 ITR03225 VCE(sat) -- IC 10 Collector to Emitter Saturation Voltage, VCE(sat) -- V 3 5 5 2 3 5 7 10 2 n 3 5 2 7 100 Collector to Emitter Voltage, VCE -- V 3 ITR03229 PC -- Ta 800 Collector Dissipation, PC -- mW 5 Pulse 7 3 7 Collector to Base Voltage, VCB -- V hFE -- IC 1000 Cob -- VCB 100 ITR03222 Gain-Bandwidth Product, f T -- MHz Collector Current, IC -- mA Common Base Output Capacitance, Cob -- pF IC -- VBE 1000 600 400 200 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR03230 No.2539-4/7 2SB1215/2SD1815 PC -- Tc Collector Dissipation, PC -- W 24 2SB1215 / 2SD1815 20 16 12 8 4 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 ITR09249 No.2539-5/7 2SB1215/2SD1815 Outline Drawing Land Pattern Example 2SB1215S-TL-E, 2SB1215S-TL-H, 2SB1215T-TL-E2SB1215T-TL-H, 2SD1815S-TL-E, 2SD1815S-TL-H, 2SD1815T-TL-E, 2SD1815T-TL-H Mass (g) Unit 0.282 mm Unit: mm * For reference 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.2539-6/7 2SB1215/2SD1815 Outline Drawing 2SB1215S-E, 2SB1215S-H, 2SB1215T-E2SB1215T-H, 2SD1815S-E, 2SD1815S-H, 2SD1815T-E, 2SD1815T-H Mass (g) Unit 0.315 mm * For reference ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.2539-7/7
2SB1215S-TL-H
物料型号:EN2539C,2SB1215/2SD1815

器件简介:这是PNP型晶体管,用于高速开关应用,如继电器驱动器、高速逆变器、转换器等。

引脚分配:1: Base, 2: Collector, 3: Emitter, 4: Collector (对于TP-FA封装)

参数特性: - 低集电极到发射极饱和电压 - hFE的卓越线性 - 小型封装,便于小型化设计 - 高fT,快速开关时间 - 无卤素合规性

功能详解:文档提供了详细的电气特性表,包括集电极截止电流、发射极截止电流、直流电流增益、增益-带宽积、输出电容、集电极到发射极饱和电压、基极到发射极饱和电压、集电极到基极击穿电压、集电极到发射极击穿电压、发射极到基极击穿电压、导通时间、存储时间、下降时间等。

应用信息:适用于高速开关应用,如继电器驱动器、高速逆变器、转换器等。

封装信息:提供了TP和TP-FA两种封装的尺寸信息,以及最小包装数量和标记信息。
2SB1215S-TL-H 价格&库存

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